臺灣博碩士論文加值系統

本研究論文利用熱蒸鍍法合成三維結構的硫化鎘 (CdS) ，藉由製程參數之操控來備製形態為交織的棒狀與相交片狀CdS晶體。此兩種型態的CdS晶體皆為六方晶結構。而棒狀CdS晶體是由包含許多不規則形狀的CdS晶粒所構成，而片狀的CdS則是由多個不同尺寸的CdS顆粒狀晶粒所組成。研究發現片狀CdS較於棒狀晶體具有較多晶體缺陷，這主要是因為片狀CdS具有較大量的晶界數以及擁有更多的硫缺陷。因此，片狀CdS表現出具有較高的光催化活性以及電化學性能。兩種型態的CdS晶體在微結構與光學性質上的明顯差異，解釋了片狀CdS晶體具有優越的光催化特性。

Networked rod-like and intersecting flake-like CdS crystallites with three-dimensional structures were synthesized using a thermal evaporation method. Both types of CdS crystallites had a hexagonal crystal for given growth conditions. The rod-like CdS crystallites contained many irregular CdS grains, whereas the flake-like CdS crystallites comprised many granular CdS grains with various sizes. Furthermore, the flake-like CdS crystallites were more defective than the rod-like CdS crystallites because they contained a larger number of grain boundaries and showed greater sulfur deficiency. Additionally, the flake-like CdS crystallites showed higher photocatalytic activity and photoelectrochemical performance. The substantial differences in the microstructure and optical properties between the two types of CdS crystallites explained the superior photoactivated properties of the flake-like CdS crystallites.

摘要 I
Abstract I
目次 II
表次 IV
圖次 V
第一章 前言 1
第二章 文獻回顧 1
2-1半導體材料 1
2-1-1 硫化物半導體 1
2-1-2 硫化鎘(CdS)結構與特性 2
2-2 硫化物半導體合成方式 3
2-2-1 水熱法 3
2-2-2 化學汽相沉積法 3
2-2-3電化學沉積法 5
2-3 光降解原理 6
2-4 光電化學原理 7
2-4-1 光電化學之能帶模擬 8
2-4-2 光電化學之電子電洞再結合 9
第三章 實驗方法與流程 35
3-1 實驗流程 35
3-1-1 CdS晶體合成及其參數討論 35
3-2 實驗藥品與設備 35
3-2-1 實驗藥品 35
3-2-2 晶體生長實驗設備 36
3-3 材料之備製程序 36
3-3-1 清潔試片 36
3-3-2 低壓化學氣相之CdS晶體製程參數 36
3-4 材料分析 37
3-4-1 掃描式電子顯微鏡 37
3-4-2 X光繞射分析 37
3-4-3 穿透式電子顯微鏡 37
3-4-4 光致發光能譜儀 38
3-4-5 可見光紫外光分光光譜儀 38
3-5 CdS之可見光驅動光降解特性分析 39
3-5-1 亞甲基藍液之備製 39
3-5-2 光降解試驗 39
3-6 CdS之可見光驅動光電化學特性分析 39
第四章 結果與討論 54
4-1 熱蒸鍍CdS之微結構分析 54
4-2 光致發光特性分析 55
4-3 可見光驅動光降解特性分析 56
4-4 可見光驅動光電化學特性分析 56
第五章 總結論 73

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