臺灣博碩士論文加值系統

摘要
本文是研究有關電動車之相關零組件，分別為定位偵測器及功率二極體。目前，全球汽車市場需求以朝多樣化、客製化發展，傳統的機械方式已不能滿足人們對於擁有一輛具有安全、環保、舒適性能汽車的渴望。藉由整合微電腦控制器、電力電子元件、影像感測器…等技術。開發電子產品與相關的應用，提供車輛及人員低汙染、低耗能、舒適、安全…等各種服務需求。
本文分別研究碳化矽功率二極體，從SBD元件結構設計與理論分析開始，考量與飄移層濃度相依的臨界電場及遷移率，嘗試建立以飄移層濃度及厚度為參數的電特性如崩潰電壓、及導通電阻等。根據模擬值設計SBD磊晶結構，建立關鍵製程及量測技術如歐姆製程與CTLM量測、RIE蝕刻與-step量測、蕭基金屬濺鍍與高壓特性量測以及光阻再回流技術以及GaAs p-i-n 結構之定位偵測器，討論橫向光伏打效應以及在不同雷射光源下其響應時間、線性度與靈敏度。
關鍵詞：蕭基金屬、飄移層、臨界電場、響應時間、靈敏度

Abstract
The purpose of this thesis is to study two devices of automobile electronics-Position-Sensitive Detector and Power Diodes. The need of global automobile market has been customization and diversification. Instead of traditional automobile industry, people want to have a car with safety, environmental friendly and comfort .By integrating microcontroller unit( MCU),power devises and image sensors, automobile electronics provides people products with low energy consumption, safety, and comfort.
Starting with design of SBD structures and theoretical analyses with consideration-dependent critical field and mobility to determine electric properties such as breakdown voltage, turn-on voltage, potential barrier height, and turn-on resistance as a function of concentration and/or thickness of the drift layer.SBD devices were then fabricated using Ohmic process and CTLM measurement, RIE etch and -step、deposition of Schottky metal and high-voltage measurement etc. GaAs p-i-n junction is illuminated by different light source. Lateral photovoltaic voltage is measured as a function of light position. Sensitivity, linearity and respond time are discussed as key performance parameters of position-sensitive detector.
Key words: Schottky metal, drift layer, critical field, respond time and sensitivity

目次
摘要 Ⅰ
Abstract Ⅱ
致謝 Ⅲ
目次 IV
圖次 VI
表次 IX
第一章
緒論 1
第二章
碳化矽蕭基位障二極體理論分析、元件特性模擬與結果 2
2-1 介紹 2
2-2理論分析 2
2-2-1崩潰電壓(VBD) 2
2-2-2 導通電阻(Ron) 2
2-3 SBD特性與討論 4
2-3-1臨界電場、臨界厚度、電子遷移率與飄移層濃度之關聯性 4
2-3-2崩潰電壓與飄移層濃度、厚度之關聯性 5
2-3-3導通電阻(Ron)與飄移層濃度、厚度之關聯性 7
2-3-4電動車之SBD功率元件 9
第三章
碳化矽蕭基位障二極體實作實驗、實驗結果與討論 11
3-1實驗步驟 11
3-2歐姆製程 14
3-2-1 RTLM與Dot-CTLM比較 14
3-2-2 Dot-CTLM歐姆製程與量測結果 17
3-2-3 Dot-CTLM量測結果分析 20
3-3 SBD功率二極體特性 21
3-3-1 崩潰電壓 21
3-3-2導通電壓 25
3-3-2導通電阻 26
3-4光阻再回流製程與SEM量測 27
3-5 結論 31
第四章
定位偵測器 32
4-1 介紹 32
4-2 元件製程與量測系統 32
4-3 定位偵測器之橫向光伏打特性 34
4-4 定位偵測器之響應時間 40
4-5結論 43
第五章
結論與未來展望 44
5-1 結論 44
5-2 未來展望 45
參考文獻 46

參考文獻
[1]H. Águas, L. Pereira, D. Costa, E. Fortunato, and R. Martins, “Linearity and sensitivity of MIS position sensitive detectors”, J. Mater.Sci., 40, pp. 1377-1381, 2005.
[2]E. Fortunato and R. Martins, “Role of the collecting resistive layer on the static characteristics of a 1D a-Si:H thin film position sensitive detector”, Rev. Sci. Instrum., 67, pp. 2702-2707, 1996.
[3]E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, “Large-area 1D thin-film position-sensitive detector with high detection resolution”, Sens. Actuator A-Phys., 51, pp. 135-142, 1996.
[4]R.Singh, J. A. Cooper, M. R.Melloch, T. P. Chow, and J. W. Palmour, “SiC power Schottky and PiN diodes,” IEEE Trans. Electron Devices, Vol. 49, pp. 665672, 2002.
[5]R.Perez. D. Tounier, A. P. Tomas, P. Godignon, N. Mestres, and J. Millan, “Planar edge termination design and technology considerations for 1.7-kV 4H-SiC PiN diodes,” IEEE Trans. Electron Devices, Vol. 52, pp.23092316,2005.
[6]C. Q. Yu, H. Wang, and Y. X. Xia, “Enhance lateral photovoltaic effect in an improved oxide-metal-semiconductor structure of TiO2/Ti/Si”, Appl. Phys. Lett., 95, pp. 263506-1–263506-3, 2009.
[7]S. Liu, X. Xie, and H. Wang, “Lateral photovoltaic effect and electron transport observed in Cr nano-film”, Opt. Express, 22, pp. 11627-11632, 2014.
[8]J. Henry, and J. Livingstone, “Optimizing the response of Schottky barrier position sensitive detectors”, J. Phys. D: Appl. Phys., 37, pp. 3180-3184, 2004.
[9] B. M. Wilamowski, Solid-State Electron.,5, 194 (1984)
[10] J. Crofton, L. M. Porter, and J.R. Williams, phys. Sat. Sol., 202, 581 (1997)
[11]B.J. Baliga,Modern PowerDevice (Wiley, New York, 1987)
[12]A. O. Konstantinov, Q. Wahab, N. Nordell, and U. Lindefelt, Aool. Lett.
[13]W. J. Shaffer, G. H. Negley, H. G. Irvine, and J. W. Palmour,Mat. Res. Soc. Symp. Proc., 339, 595 (1994)
[14]魏拯華,李隆盛,“Key component development of power module in motor control unit for electrical vehicles,”智慧車輛技術專輯, 工業雜誌, 334期.
[15] CREE Research Inc., Raleigh, N.C:, U.S.A
[16] K. J. Schoen, J. P. Henning, J. M. Woodall, J. A. Cooper Jr., and M. R. Melloch, IEEE Elec. Dev. Lett., 19, 97 (2000)
[17]孫燕杰,河山虎,甄聰棉,龔桓翔,楊映虎,王印月,“CTLM量測金屬/半導體歐姆接觸電阻率,”Semiconductor Optoelectronics, Vol. 20 No. 4 Aug. 1999.
[18]W. Hermansson, B. Bijlenga, L. Ramberg, KRottner, L.Zdansky, C. I. Harris, M. Bakowski, A. Schoner, N. Lundberg, M. Ostling and F.Dahlquist, Schottky Diode of SiC and a Method for Production thereof, US Patent No 6,104,043,(2000).
[19]B. J. Skromme, E. Luckowski, K. Moore, and D. Ganser., Journ. Of Electronic Materials,29,3 (2000)
[20]E. H. Phoderick and R. H. Williams, Metal-Semiconductor Contacts, 19, 2nd ed.(Clarendon Press, Oxford, 1988).
[21] J. Crofton and S. Sriram, IEEE Trans.Electron Devies, 43, 12 (1996)
[22] U. Zimmerman, A. Hallen, J. Osterman, E. Danielsson, D. Kuylenstierna, and B. Breitholtz: in Workshop Microtechnology and Thermal Problems in Electronics, Microtherm 2000 (edited by M. Langer, Z. Lisik, and J. Podgorski), pp. 146-151
[23]J. Henry, and J. Livingstone, “A comparison of Schottky position-sensitive detectors as a function of light wavelength”, IEEE Sens. J., 3, pp. 519-524, 2003.
[24]J. Henry, and J. Livingstone, “Wavelength response of thin film optical position-sensitive detectors”, Opt. A: Pure Appl. Opt., 4, pp. 527-534, 2002.
[25]J. Henry, and J. Livingstone, “Comparison of layered metal-semiconductor optical position sensitive detectors”, IEEE Sens. J., 2, pp. 372-376, 2002.
[26]C. Narayanan, A. Bruce Buckman, I. Busch-Vishniac, and Wanjun Wang, “Position Dependence of the Transient Response of a Position-Sensitive Detector Under Periodic Pulsed Light Modulation”,IEEE Sens. J.,2,pp. 1688-1694,1993
[27]http://eatontseng.pixnet.net/blog/post/102731098-%E7%AC%AC%E5%8D%81%E4%B8%89%E7%AB%A0%EF%BC%9A%E8%BB%8A%E7%94%A8%E6%84%9F%E6%B8%AC%E5%99%A8%E4%BB%8B%E7%B4%B9