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研究生:林詩皓
研究生(外文):Lin, Shi-Hao
論文名稱:鋯鈦酸鉛薄膜結構變化對微橋結構水下超音波元件特性影響之研究
論文名稱(外文):A Study of Properties of Microbridge Ultrasonic Sensor Influenced with Different PZT Thin Film Structures
指導教授:張忠誠張忠誠引用關係
指導教授(外文):Chang, Chun-chen
口試委員:蔡榮輝鄭岫盈黃嘉宏
口試委員(外文):Tsai, Jung-HuiCheng, Shiou-YingHuang, Chia-Hong
口試日期:2015-12-28
學位類別:碩士
校院名稱:國立臺灣海洋大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2016
畢業學年度:104
語文別:中文
論文頁數:60
中文關鍵詞:鋯鈦酸鉛犧牲層微橋結構
外文關鍵詞:Lead zirconate titanate (PZT)sacrificial layermicro-bridge structure
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致謝 I
摘要 II
Abstract III
Chapter1序論 1
1-1超音波介紹 1
1-2超音波感測器 1
1-3 研究動機 2
1-4 論文概述 2
Chapter2 壓電材料之薄膜理論及製程技術 3
2-1 壓電效應 3
2-1-1正壓電效應 3
2-1-2逆壓電效應 3
2-2 壓電參數 3
2-2-1共振頻率(Resonance frequency) 4
2-2-2機電耦合係數(electromechanical coupling coefficient ) 4
2-2-3介電常數(permittivity) 4
2-2-4機械品質因數(mechanical quality factor, Qm) 5
2-3極化(Polarization) 5
2-4電滯曲線 6
2-5居禮溫度 6
2-6 PZT壓電材料 7
2-7壓電方程式[23] 8
2-8黃光製程技術 9
2-9犧牲層製程簡介 10
2-9-1 濕式蝕刻技術 10
2-9-2 犧牲層技術 11
Chapter3微橋式超音波感測元件架構及製作 12
3-1LNO緩衝層沉積與退火製程 12
3-2LNO薄膜之晶體結構 12
3-2-1 LNO薄膜表面粗度分析 12
3-3 PZT壓電層沉積與退火製程 12
3-4 超音波感測元件之架構 13
3-4-1製程材料及清洗 14
3-4-2沉積犧牲層氧化鋅(ZnO) 14
3-4-3濕式蝕刻犧牲層氧化鋅(ZnO) 14
3-4-5沉積支撐層氮化矽(Si3N4) 14
3-4-6沉積下電極鈦(Ti)與白金(Pt) 14
3-4-7沉積緩衝層鎳酸鑭(LNO) 15
3-4-8沉積壓電材料鋯鈦酸鉛(PZT) 15
3-4-9沉積上電極極鈦(Ti)與白金(Pt) 15
3-4-10沉積防水層氮化矽(Si3N4) 15
3-4-11掏空犧牲層氧化鋅(ZnO) 16
3-4-12元件封裝 16
Chapter4超音波感測元件特性量測及分析 17
4-1 元件電性量測 17
4-1-1元件共振與反共振頻率分析 17
4-1-2元件等值電路參數量測 17
4-1-3元件介電參數量測 18
4-1-4電滯曲線量測 18
4-1-5機電耦合係數量測 19
4-2元件特性量測設備 19
4-2-1水下接收強度量測 19
4-2-2水下靈敏度量測 20
4-2-2-1 互易校準法推導及計算[45] 20
4-2-2-2 互易校準法量測 21
4-3 元件之聲場量測 22
4-4影像掃描測試 23
Chapter5結論 24
參考文獻 25

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