臺灣博碩士論文加值系統

本研究探討濕蝕刻技術搭配鋁背表面電場增強具電鍍銅電極之單晶矽太陽能電池之光電特性研究，由於網印式單晶矽太陽能電池背電極之鋁膠串聯電阻不佳，因此本研究採用電鍍銅電極來取代鋁膠背電極。首先藉由鹽酸/雙氧水/水混合溶液搭配蝕刻溫度與時間，將背電極鋁膠蝕刻掉，留下鋁背表面電場當作電鍍銅的晶種層，接著探討濕蝕刻溶液(硝酸銀/氫氟酸/水混合液以及氫氟酸/硝酸/水混合液)之濃度、蝕刻時間等參數對鋁背表面電場表面形貌特性之影響，進一步改善電鍍銅之附著力，同時探討不同種類晶種層、晶種層的表面處理、電鍍鎳之電鍍時間、電鍍銅之電鍍時間等參數對單晶矽太陽能電池光電特性影響，晶種層種類包含鋁矽合金、蒸鍍鎳之鋁矽鎳合金及電鍍鎳之鋁矽鎳合金。
實驗結果顯示，當氫氟酸濃度為5%搭配硝酸濃度為5%，蝕刻時間為1分鐘時可有效蝕刻鋁矽層(Al-Si)，留下背表面電場(BSF)當作晶種層，並且使表面粗糙化，而最佳之晶種層為鋁矽合金，搭配電鍍銅之電鍍時間為30分鐘可得最佳之金屬電極，其表面銅膜平均厚度為30μm，其太陽能電池光電轉換效率為15.9%、開路電壓為633 mV、短路電流密度為32.8 mA/cm2及平均附著力為1.451N。

In this thesis, enhanced photovoltaic characteristics of monocrystalline silicon solar cells (MSSCs) with electroplating copper were presented by wet etching and aluminum back-surface-field (Al-BSF). Since the series resistance of MSSCs with the aluminum pastes as rear electrode was not good, the electroplating copper electrode was used to replace the aluminum pastes. First, the aluminum pastes was moved by the HCl/H2O2/H2O mixed solution at 1：1：4, and the etching temperature of 75℃, as well as the etching time of 10 min. After aluminum paste removal, the Al-BSF layer as seed layer of the electroplating copper was investigated. Furthermore, the effects of the AgNO3/HF/H2O and the HF/NO3/H2O mixed solution on the surface morphologies of Al-BSF and adhesion between the Al-BSF and the electroplating copper were investigated. The etching parameters include the concentration of etching solution and etching time. Moreover, the effects of various seed layers, the surface treatment of the seed layer, the electroplating nickel and copper on photovoltaic characteristics of the MSSCs were achieved. Various seed layers include Al-Si alloy, evaporated Ni-Al-Si alloy and electroplating Ni-Al-Si alloy.
The results suggest that, the rough Al-BSF seed layer can be achieved by the hydrofluoric acid and the nitrate at the concentration of 5% and 5%, respectively. The etching time was 1 min. Compared with all seed layer, the Al-Si alloy seed layer is better than that the other ones. The thickness of the electroplating copper with 29 um was presented by the electroplating time at 30 min. Finally, a conversion efficiency of 15.9% with the open-circuit voltage (Voc) of 633 mV, the short-current density (Jsc) of 32.8 mA/cm2, and the average adhesion to 1.451N was demonstrated.

摘要....................................................i
Abstract...............................................ii
誌謝..................................................iii
目錄...................................................iv
表目錄.................................................vi
圖目錄................................................vii
第一章 緒論..............................................1
1.1電鍍技術搭配晶種層應用於矽基太陽能電池之文獻回顧..........1
1.2濕蝕刻技術應用於矽基太陽能電池之文獻回顧.................3
1.3研究動機..............................................5
1.4論文架構..............................................5
第二章 元件製程與特性量測..................................6
2.1探討不同種類晶種層搭配電鍍技術對於單晶矽太陽能電池之光電特性研究....................................................6
2.1.1正電極旋塗抗蝕刻阻擋膠...............................6
2.1.2鹽酸/雙氧水/水混和溶液蝕刻背電極鋁膠...................6
2.1.3浸泡Buffer Oxide Etch(BOE)去除表面氧化層.............7
2.1.4形成鋁矽合金及鋁矽鎳合金晶種層........................7
2.1.5背電極電鍍銅........................................7
2.2 探討網印式單晶矽太陽能電池之鋁矽合金/電鍍銅堆疊層及鋁矽鎳合金/電鍍銅堆疊層背電極效應..................................7
2.2.1正電極旋塗抗蝕刻阻擋膠...............................7
2.2.2鹽酸/雙氧水/水混和溶液蝕刻背電極鋁膠...................8
2.2.3浸泡Buffer Oxide Etch(BOE)去除鋁矽上的氧化層.........8
2.2.4背表面電場進行濕蝕刻.................................8
2.2.5背電極電鍍銅........................................8
2.2.6鍍錫銅帶焊接........................................9
2.2.7拉力機拉力量測......................................9
2.3太陽能光伏元件電性量測.................................9
2.3.1四點探針(Four-point Probe)量測......................9
2.3.2太陽能電池光電轉換效率量測............................9
2.4材料物性量測.........................................10
第三章 藉由濕蝕刻技術搭配鋁背表面電場增強具電鍍銅電極之單晶矽太陽能電池之光電特性研究...................................24
3.1探討不同種類晶種層搭配電鍍技術對於單晶矽太陽能電池之光電特性研究...................................................24
3.1.1 研究動機..........................................24
3.1.2 結果與討論........................................24
3.1.3 結論.............................................27
3.2藉由改變不同濃度與蝕刻時間之濕蝕刻技術對鋁背表面電場表面形貌特性之研究..............................................28
3.2.1 研究動機..........................................28
3.2.2 結果與討論........................................28
3.2.3 結論.............................................34
第四章 總結論與未來展望.................................106
4.1總結論.............................................106
4.2未來展望............................................106
參考文獻...............................................107
Extended Abstract.....................................110
簡歷..................................................113

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