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研究生:林俊彥
研究生(外文):Chun-Yen Lin
論文名稱:添加碘化鉀對非真空Cu(InGa)Se2薄膜成長之影響及性質
論文名稱(外文):The Effects of KI on the Growth and Characteristic of Non-vacuum Cu(InGa)Se2 Thin Films
指導教授:楊立中楊立中引用關係
學位類別:碩士
校院名稱:國立虎尾科技大學
系所名稱:材料科學與工程系材料科學與綠色能源工程碩士班
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2016
畢業學年度:104
語文別:中文
論文頁數:80
中文關鍵詞:銅銦鎵硒前驅層黃銅礦結構非真空吸收層
外文關鍵詞:CuInGaSePrecursorChalcopyriteNon-vacuumAbsorber Layer
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本實驗利用非真空製程成長 KI鹽類摻雜之銅銦鎵硒Cu(InGa)Se2的光伏元件之吸收層。實驗過程先將銅、銦、鎵、硒四種元素,調整其比例並添加碘化鉀形成CIGS漿料,分別製備出貧銅(Cu-poor)和劑量比(Stoichiometric)、富銅(Cu-rich)三種參數,再藉由球磨法製備成漿料,並利用塗佈法將漿料塗佈於玻璃基板上形成前驅層,再將前驅層置入紅外線快速升溫爐(RTA)內分別進行300 oC到500 oC快速退火製程,持溫10分鐘,使CIGS薄膜具有黃銅礦(Chalcopyrite)結構。利用X光繞射分析儀(XRD)觀察晶體結構變化、掃描電子顯微鏡(SEM)觀察表面形貌的變化、感應耦合電漿質譜分析儀(ICP-MS)和能量散色光譜儀(EDS)來分析成分變化、紫外光可見光光譜儀(UV-Vis)分析光學性質。實驗結果得知,CIGS薄膜在退火後具有黃銅礦結構之特徵峰,隨著熱處理溫度的增加,銅含量比例上升,半高寬變窄,晶粒隨之變大。根據分析,熱處理溫度400 oC、持溫10分鐘時,可得到具有最佳的黃銅礦結構之CIGS薄膜。

This experiment used non-vacuum processes to prepare KI doped Cu(InGa)Se2 thin films as the absorber layers for the photovoltaic devices. Experiment process is the first, Cu, In, Ga and Se elements and KI adjusted the ratio of different powders, we can obtain a Cu-poor, Stoichiometric and a Cu-rich type.Inks of the mixtures were made using wet-type ball milling,and printed onto a glass substrate to form a precursor film by spin coating. Then, the samples were treated with in a furnace at 300 to 500 oC, respectively, for 10 minutes, then made to reach with heat treatment to then made to reach with heat treatment to from the chalcopyrite structure.The crystal structure changes were observed by X-ray diffraction (XRD),Changer in surface topography were observed by scanning electron microscopy (SEM),Compositions of the films were determined by inductively coupled plasma composition mass spectrometer (ICP-MS) and energy dispersive spectroscopy (EDS),and the band gaps were obtained by photoluminescence (PL) measurement. The experimental result shows that CIGS thin film by annealing had a characteristic peak of a chalcopyrite structure, with increasing annealing temperature, the copper content increased, the half height width of the XRD spectra became narrower and the grains becomes larger.Based on the analysis, we can obtain the best chalycopyrite structured of CIGS thin film at 400 oC 10 minutes.

目錄
中文摘要.........i
Abstract.........ii
誌謝.........iii
總目錄.........iv
表目錄.........viii
圖目錄.........ix
第一章 簡介.........1
1.1 前言.........1
1.2 太陽能電池的分類.........1
1.3 薄膜型太陽能電池.........2
1.3.1銅銦鎵硒(CIGS)薄膜太陽能電池.........2
1.3.2碲化鎘(CdTe)薄膜太陽能電池.........4
1.3.3非晶矽薄膜太陽能電池.........4
1.3.4染料敏化薄膜太陽能電池.........5
1.4研究動機.........6
第二章 文獻探討.................. 12
2.1太陽能電池工作原理..................12
2.2太陽能電池之能量轉換效率與填充因數(Fill factor..................13
2.3銅銦鎵硒(CIGS)太陽能電池製程技術...........................15
2.3.1鈉(Soda-lime)玻璃與康寧(Corning)玻璃基板.................. 15
2.3.2鉬(Mo)金屬背電極...........................16
2.3.3銅銦硒(CuInSe) / 銅銦鎵硒(CuInGaSe)主吸收層(Absorber)............. 16
2.3.4硫化鎘緩衝層(CdS Buffer Layer)..................20
2.3.5透明導電層(Transparent Conducting Oxide Layer,TCO).............. 21
2.3.6氟化鎂(MgF2)抗反射層...........................21
2.3.7鋁(Al)金屬電極........................... 22
2.4銅銦鎵硒吸收層製程技術...........................22
2.4.1蒸鍍法...........................22
2.4.2硒化法...........................24
2.4.3塗佈法...........................25
第三章 實驗流程與分析...........................29
3.1實驗方法與步驟...........................29
3.1.1 基板前處理...........................29
3.1.2 漿料之配置...........................29
3.1.3 塗佈步驟...........................30
3.1.4 軟烤步驟...........................30
3.1.5 快速退火處理...........................30
3.2 實驗設備........................... 31
3.2.1 快速快火系統...........................31
3.2.2 旋轉塗佈儀...........................31
3.2.3次微米粉末製造設備.....................32
3.3 實驗分析設備..........................33
3.3.1 X光繞射儀(X-Ray Diffraction,XRD................33
3.3.2能量光譜儀(Energy Dispersive Spectrometer,EDS).........34
3.3.3掃描式電子顯微鏡(Scanning Electron Microscope,SEM.........35
3.3.4紫外光-可見光(UV-Vis..................36
3.3.5感應耦合電漿質(Inductively Coupled Plasma-Mass Spectrometry,ICP-MS)...............36
第四章 結果與討論..........................48
4.1 CuInGaSe2薄膜成份分析..................48
4.2 CuInGaSe2結晶特性分析..................50
4.2.1球磨對銅銦鎵硒初鍍膜結晶特性之影響.........50
4.2.2熱處理對銅銦鎵硒薄膜結晶特性之影響.........50
4.2.3銅對熱處理後銅銦鎵硒薄膜結晶特性之影響...... 52
4.2.4銅對銅銦鎵硒薄膜特徵峰(112)之影響.........53
4.3 CuInGaSe2顯微結構分析..................53
4.3.1熱處理溫度對銅銦鎵硒薄膜顯微結構之影響...... 53
4.4光學特性分析..................54
第五章 結論..................69
參考文獻..................71
英文論文大綱..................75
簡歷..................80




1.季法文,“CIGS太陽能電池技術現況與發展技術”,中山科學研究院 材料暨光電研究所,2009。
2.慶聲科技公司,“薄膜太陽能電池”, http://www.kson.com.tw/chinese/study_23-8.htm
3.S.Zweigart, D. Schmid, J. Kessler et al., “Studies of the growth -mechanism of polycrystalline CuInSe2 thin-films prepared by a sequential progress”, J. Cryst. Growth, vol.146, pp. 233-238, 1995.
4.S.H. Kwon, S. C. Park, B. T. Ahn, K. H. Yoon et al., “Effect of CuIn3Se5 layer thickness on CuInSe2 thin films and devices” Solar Energy, vol.64, pp. 55-60,1998.
5.S. B. Zhang, S. H. Wei, and A.Zunger, “Stabilization of ternary compounds via ordered arrays of defect pairs”, Phys. Rev. Lett., vol.78, pp. 4059-4062,1997.
6.F. J. Pern, R. Noufi, A. Mason et al., “Characterizations of electrodeposited CuInSe2 thin films: Structure, deposition and formation mechanisms” ,Thin Solid Films, vol. 202, pp. 299,1991.
7.R. J. Matson et al. Mater. Res. Soc., vol.426, pp.183,1996.
8.R. Noufi, M. Romero, et al.,“CIGS thin film growth model”, NCPV review Meeting,2003.
9.Energy Trend, http://pv.energytrend.com.tw/news/20160303-13440.html
10.黃惠良、曾百亨,太陽電池:太陽能轉換成電能的最佳裝置-Solar Cells,Chapter 11,五南,台北市,2008。
11.A. Luque and S. Hegedus, ,“Energy Collected and Delivered by PV Modules”, John Wiley & Sons,2003.
12.黃崇傑,“太陽電池技術簡介”,電機月刊,16卷7期, 頁108-115,7月,2006
13.Hamakawa, Yoshihiro, “Thin-Film Solar Cells Next Generation Photovoltaics and Its Applications”, pp. 107, Springer-Verlag Berlin Heidelberg, Germany,2004.
14.Hamakawa, Yoshihiro, “Thin-Film Solar Cells Next Generation Photovoltaics and Its Applications”, pp. 124, Springer-Verlag Berlin Heidelberg, Germany, 2004.
15.Michael Grätzel, Brian O''Regan, “high-efficiency solar cell based ondye-sensitized colloidal TiO2 films”, Nature , 353 (24), pp. 737 - 740, October, 1991.
16.Energy Trend, http://pv.energytrend.com.tw/news/20130716-6404.html.
17.NREL , “Best research photovoltaic cell efficiencies Rev”. 12-4-2013, US Department of Energy, 2013.
18.T. Markvart and L. Castaner, “solar cell: materials and manufacture and operation”, Oxford, Elsevier Advanced Technology, 2005.
19.L. M. Mansfield, I. L. Repins, S.Glynn, J. W. Pankow, M. R. Young, C.DeHart, R. Sundaramoorthy, C. L. Beall, and B. To, “Sodium-Doped Molybdenum Targets for Controllable Sodium Incorporation in CIGS Solar Cells”, Photovoltaic Specialists Conference (PVSC ) 37th IEEE , pp. 3636-3641, 2011.
20.黃瑜, “CIGS太陽電池技術與展望”, 工研院產業學院, 民國96年8月 16日。
21.S. Zweigart, D. Schmid, J. Kessler, H. Dittrich and H. W. Schock, “Studies of the growth-mechanism of polycrystalline CuInSe2 thin-films prepared by a sequential progress”, J. Cryst. Growth, 146, pp. 233-238 1995.
22.R. Kimura, T. Nakada and P. Fons, “Photoluminescence properties of sodium incorporation in CuInSe2 and Cu1In3Se5 thin films”, Solar energy aterials and solar cells, 67, pp. 289-295, 2001.
23.D. Braunger, D. Hariskos, G. Bilger, U. Rau, “Influence of sodium on the growth of polycrystalline Cu(in,Ga)Se2 thin films”, Thin Solid Films, 361, pp. 161-166, 2000.
24.A. Rockett, K. Granath, S. Asher, M.M. Al Jassim, F. Hasoon, R. Matson, B. Basol, V. Kapur, J.S. Britt, T. Gillespie, C. Marshall, “Na incorporation in Mo and CuInSe2 from production processes”, Solar energy materials and solar cells, 50, pp. 255-264,1999.
25.J. Holz, F. Karg and H. von Philipsborn, “Proceedings of the 12th European Photovoltaic Solar Energy Conference”, Ampsterdam, p. 1592,1994.
26.M. Ruckh, D. Schmid, M. Kaiser, R. Schaffler, T. Walter and H. W. Schock, “Proceedings of the 1st World Conference on Photovoltaic 35 Energy Conversion”, IEEE, New York, p. 156,1994.
27.謝秀琴、戴賢輝、謝世豪,“TFT-LCD 無鹼玻璃基板 材料介紹”,化工資訊,13卷,7 期,頁6-13,7月,1999。
28.R. Chakrabarti, A.B. Maity, R. Pal, D. Bhattacharyya, S. Chaudhuri, and A.K. Pal, “Estimation of Stress in Polycrystalline CuInSe2 Films Deposited on Mo-Coated Glass Substrates”, Phys. Stat. Sol. (a), 160(1), pp. 67-76, March, 1997.
29.J. R. Tuttle, M. Contreras, M. H. Bode, et al., “Structure chemistry and growth mechanisms of photovoltaic quality thin-film Cu(In,Ga)Se2 grown from a mixed-phase precursor”,J.Appl.Phys.,77 (1), pp. 153-161, January,1995.
30.D. Hamemamm, Crit, Rev. Solid State Mater. Sci., 14, p. 377, 1988.
31.D. Schmid, M. Ruckh, F. Crunwald and J. W. Schock, J. Appl. Phys., 73, p.2902, 1993.
32.B. J. Stanbery,“Copper indium selenides and related materials for photovoltaic devices”, Critical Reviews in Solid State and Materials Sciences , 27, pp.73-117,2002.
33.R. W. Birkmire, L.C.Dinetta, P. G. Lasswell, J. D. Meakin and J. E. Phillips, “Solar Cells”, 16, p.419, 1986.
34.B. M. Basol, V. K. Kapur and R. C. Kullberg, “Solar Cells”, 27, p.299, 1989.
35.K. W. Mitchell, G. A. Pollack and A. V. Mason, “Proceedings of the 20th Institute of Electrical and Electronics Engineers Photovoltaic Specialists Conference”, (Institute of Electrical and Electronics Engineers, New York , p.1578, 1988.
36.L.-C. Yang and A. Rocket, “Cu-Mo Contact to CuInSe2 for Improved Adhesion in Photovotaic Devices,” J. Appl. Phys., 75(2), P.1185,1994.
37.R. J. Matson M.A. Contreras, J.R. Tuttle, A.B. Swartzlander, P.A. Parilla, R. Noufi, Mat., “Effects of the Concentration of Ga on Junction Formation in Thin-film ZnO/CdS/CuInXGal-XSe2 /Mo Photovoltaic Devices”, Mater. Res. Soc. Symp. Proc., 426, 183,1996.
38.G. Gordillo, G. Gediel, L.M. Caicedo, H. Infantic and J. Sandino, 2000, “Study of Optical, Structural and Morphological Properties on Cd-Free Buffer Materials”, Photovoltaic Specialists Conference. Conference Record of the Twenty-Eighth IEEE, pp 614-617,2000.
39.W. Eisele, A. Ennaoul, P. Schubert-Bischoff, "New cadmium-free buffer layers as heterojunction partners on Cu(In,Ga)(S,Se)2 thin film solar cells" , IEEE, pp.692-69, 2000.
40.G. Gordillo, G. Cediel, L. M. Caicedo, H. Infante and J. Sandino, "Study of optical, structural and morphological properties on Cd-free buffer materials, IEEE, pp.614-617,2001.
41.T. Nakada and M. Mizutani, “Improved efficiency of Cu(In,Ga)Se2 thin film solar cells with chemically deposited ZnS butter layers by air-annealing-formation of homojunction by solid phase diffusion”, Proc 28th IEEE PVSC, pp. 529-534, Anchorage, September,2000.
42.W. J. Jeong, S. K. Kimb and G. C. Parka, “Preparation and characteristic of ZnO thin film with high and low resistivity for an application of solar cell”, Thin Solid Films, 506-507, pp. 180-183, May,2006.
43.A. Luque and S. Hegedus, “Handbook of photovoltaic science and engineering”, John Wiley & Sons Ltd,2003.
44.Y. Hamakawa, “Thin-Film Solar Cells:Next Generation Photovoltaics and Its Applications”, Springer,2004.
45.Kegao Liua, Hong Liub, JiyangWangb, Lei Shia, “Synthesis and characterization of Cu2Se prepared y hydrothermal co-reduction”, Journal of Alloys and Compounds, May,2009.
46.Nakada, T., and Mizutani, M., Proc., “28th IEEE PVSC”, Anchorage, 15-22, pp.529-536,2000.
47.W. J. Jeong, S. K. Kim, G. C. Park, “Preparation and characteristic of ZnO thin film with high and low resistivity for an application of solar cell.”, Thin Solid Films. 506-507, p180-183,2006.
48.U. C. Bohnke and G. Kuhn, “Phase Relations in the Ternary System Cu-In-Se”, Journal of Materials Science, 22(5), pp. 1635-1641,1987.
49.H. W. Schock et al., “High Efficiency Chalcopyrite Based Thin Film Solar Cells-Results of the Eurocis-Colaboration”, Eleventh E.C. PVSEC, pp. 116-119, Montreux, October,1992.
50.B. M. Baso, V. K. Kapur and A. Halani, “Advances in High Efficiency CuInSe2 Solar Cells Prepared by the Selenization Technique”, Twenty Second IEEE PVSC, pp. 893-897, Las Vegas, October,1991.
51.半導體科技,http://ssttpro.acesuppliers.com/meg/meg_1_07917 90532005117234004316_4140.html
52.M. A. Contreras, J. Tuttle, A. Gabor, A. Tennant, K. Ramanathan, S. Asher, A. Franz, J. Keane, L. Wang, J. Scofield, and R. Noufi, Proc., “Photovolt. Energy Conv.”, IEEE, 68, Piscataway,1994.
53.F. Burmeister, C. Schfle, T. Matthes, M. Bhmisch, J. Boneberg and P. Leiderer, “Colloid Monolayers as Versatile Lithographic Masks”, Langmuir, 13(11), pp. 2983-2987,1997.
54.林麗娟,“X光繞射原理及其應用”,工業材料雜誌,86期,2月,1994。
55.B. D. Cullity and S. R. Stock , “Elements of X-ray Diffraction (3rd ed)”, pp. 170, Prentice Hall, New Jersey,2001.
56.“User’s Manual”, Ametek Process & Analytical Instruments,2003.
57.陳力俊等編著,“材料電子顯微鏡學”,儀科中心出版,Chapter 11,新竹,1990。
58.汪建民等著,“材料分析”,中國材料科學學會,pp.121-125 & pp.169-173, 4月,2001。
59.李珠,“感應耦合電漿質譜儀技術及其在材料分析上的應用”,工業材料雜誌,181期,1月,2002。
60.K. E. Jarvis, A. L. Gray and R. S. Houk, “Handbook of Inductively Coupled Plasma Mass Spectrometry?, Blackie, Glasgow,1992.
61.MyoungGuk Park et al., “Characteristics of Cu(In,Ga)Se2 (CIGS) thin films deposited by a direct solution coating process”, Journal of Alloys and Compounds, pp. 68-74,2012.
62.H. Jitsukawa, H. Matsushita and T. Takizawa,“Phase diagrams of the (Cu2Se, CuSe)-CuGaSe2 system and the crystal growth of CuGaSe2 by the solution method”, Journal of Crystal Growth, 186(4), pp. 587-593, March, 1998.
63.M. Krunks, O. Kijatkina, A. Mere, T. Varema, I. Oja, and V. Mikli, “Sprayed CuInS2 films grown under Cu-rich conditions as absorbers for solar cells”, Sol. Energy Mater. Sol. Cells, 87(1-4), pp. 207-214, May,2005.
64.D. Jiles, “Introduction to the Electronic Properties of Materials”, Advanced Materials, 7(4), pp. 423-424, April,1994.
65.B. E. Sernelious , K. F. Berggren, Z. C. Jin, I. Hamberg and C. G. Granqvist, “Band-gap tailoring of ZnO by means of heavy Al doping”, Physical Review B, 37(17), pp. 10244-10248,1998.
66.J.I. Pankove, Optical Processes in Semiconductors, pp. 93, Dover Inc., New York,1975.


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