1.季法文,“CIGS太陽能電池技術現況與發展技術”,中山科學研究院 材料暨光電研究所,2009。
2.慶聲科技公司,“薄膜太陽能電池”, http://www.kson.com.tw/chinese/study_23-8.htm
3.S.Zweigart, D. Schmid, J. Kessler et al., “Studies of the growth -mechanism of polycrystalline CuInSe2 thin-films prepared by a sequential progress”, J. Cryst. Growth, vol.146, pp. 233-238, 1995.
4.S.H. Kwon, S. C. Park, B. T. Ahn, K. H. Yoon et al., “Effect of CuIn3Se5 layer thickness on CuInSe2 thin films and devices” Solar Energy, vol.64, pp. 55-60,1998.
5.S. B. Zhang, S. H. Wei, and A.Zunger, “Stabilization of ternary compounds via ordered arrays of defect pairs”, Phys. Rev. Lett., vol.78, pp. 4059-4062,1997.
6.F. J. Pern, R. Noufi, A. Mason et al., “Characterizations of electrodeposited CuInSe2 thin films: Structure, deposition and formation mechanisms” ,Thin Solid Films, vol. 202, pp. 299,1991.
7.R. J. Matson et al. Mater. Res. Soc., vol.426, pp.183,1996.
8.R. Noufi, M. Romero, et al.,“CIGS thin film growth model”, NCPV review Meeting,2003.
9.Energy Trend, http://pv.energytrend.com.tw/news/20160303-13440.html
10.黃惠良、曾百亨,太陽電池:太陽能轉換成電能的最佳裝置-Solar Cells,Chapter 11,五南,台北市,2008。
11.A. Luque and S. Hegedus, ,“Energy Collected and Delivered by PV Modules”, John Wiley & Sons,2003.
12.黃崇傑,“太陽電池技術簡介”,電機月刊,16卷7期, 頁108-115,7月,200613.Hamakawa, Yoshihiro, “Thin-Film Solar Cells Next Generation Photovoltaics and Its Applications”, pp. 107, Springer-Verlag Berlin Heidelberg, Germany,2004.
14.Hamakawa, Yoshihiro, “Thin-Film Solar Cells Next Generation Photovoltaics and Its Applications”, pp. 124, Springer-Verlag Berlin Heidelberg, Germany, 2004.
15.Michael Grätzel, Brian O''Regan, “high-efficiency solar cell based ondye-sensitized colloidal TiO2 films”, Nature , 353 (24), pp. 737 - 740, October, 1991.
16.Energy Trend, http://pv.energytrend.com.tw/news/20130716-6404.html.
17.NREL , “Best research photovoltaic cell efficiencies Rev”. 12-4-2013, US Department of Energy, 2013.
18.T. Markvart and L. Castaner, “solar cell: materials and manufacture and operation”, Oxford, Elsevier Advanced Technology, 2005.
19.L. M. Mansfield, I. L. Repins, S.Glynn, J. W. Pankow, M. R. Young, C.DeHart, R. Sundaramoorthy, C. L. Beall, and B. To, “Sodium-Doped Molybdenum Targets for Controllable Sodium Incorporation in CIGS Solar Cells”, Photovoltaic Specialists Conference (PVSC ) 37th IEEE , pp. 3636-3641, 2011.
20.黃瑜, “CIGS太陽電池技術與展望”, 工研院產業學院, 民國96年8月 16日。
21.S. Zweigart, D. Schmid, J. Kessler, H. Dittrich and H. W. Schock, “Studies of the growth-mechanism of polycrystalline CuInSe2 thin-films prepared by a sequential progress”, J. Cryst. Growth, 146, pp. 233-238 1995.
22.R. Kimura, T. Nakada and P. Fons, “Photoluminescence properties of sodium incorporation in CuInSe2 and Cu1In3Se5 thin films”, Solar energy aterials and solar cells, 67, pp. 289-295, 2001.
23.D. Braunger, D. Hariskos, G. Bilger, U. Rau, “Influence of sodium on the growth of polycrystalline Cu(in,Ga)Se2 thin films”, Thin Solid Films, 361, pp. 161-166, 2000.
24.A. Rockett, K. Granath, S. Asher, M.M. Al Jassim, F. Hasoon, R. Matson, B. Basol, V. Kapur, J.S. Britt, T. Gillespie, C. Marshall, “Na incorporation in Mo and CuInSe2 from production processes”, Solar energy materials and solar cells, 50, pp. 255-264,1999.
25.J. Holz, F. Karg and H. von Philipsborn, “Proceedings of the 12th European Photovoltaic Solar Energy Conference”, Ampsterdam, p. 1592,1994.
26.M. Ruckh, D. Schmid, M. Kaiser, R. Schaffler, T. Walter and H. W. Schock, “Proceedings of the 1st World Conference on Photovoltaic 35 Energy Conversion”, IEEE, New York, p. 156,1994.
27.謝秀琴、戴賢輝、謝世豪,“TFT-LCD 無鹼玻璃基板 材料介紹”,化工資訊,13卷,7 期,頁6-13,7月,1999。
28.R. Chakrabarti, A.B. Maity, R. Pal, D. Bhattacharyya, S. Chaudhuri, and A.K. Pal, “Estimation of Stress in Polycrystalline CuInSe2 Films Deposited on Mo-Coated Glass Substrates”, Phys. Stat. Sol. (a), 160(1), pp. 67-76, March, 1997.
29.J. R. Tuttle, M. Contreras, M. H. Bode, et al., “Structure chemistry and growth mechanisms of photovoltaic quality thin-film Cu(In,Ga)Se2 grown from a mixed-phase precursor”,J.Appl.Phys.,77 (1), pp. 153-161, January,1995.
30.D. Hamemamm, Crit, Rev. Solid State Mater. Sci., 14, p. 377, 1988.
31.D. Schmid, M. Ruckh, F. Crunwald and J. W. Schock, J. Appl. Phys., 73, p.2902, 1993.
32.B. J. Stanbery,“Copper indium selenides and related materials for photovoltaic devices”, Critical Reviews in Solid State and Materials Sciences , 27, pp.73-117,2002.
33.R. W. Birkmire, L.C.Dinetta, P. G. Lasswell, J. D. Meakin and J. E. Phillips, “Solar Cells”, 16, p.419, 1986.
34.B. M. Basol, V. K. Kapur and R. C. Kullberg, “Solar Cells”, 27, p.299, 1989.
35.K. W. Mitchell, G. A. Pollack and A. V. Mason, “Proceedings of the 20th Institute of Electrical and Electronics Engineers Photovoltaic Specialists Conference”, (Institute of Electrical and Electronics Engineers, New York , p.1578, 1988.
36.L.-C. Yang and A. Rocket, “Cu-Mo Contact to CuInSe2 for Improved Adhesion in Photovotaic Devices,” J. Appl. Phys., 75(2), P.1185,1994.
37.R. J. Matson M.A. Contreras, J.R. Tuttle, A.B. Swartzlander, P.A. Parilla, R. Noufi, Mat., “Effects of the Concentration of Ga on Junction Formation in Thin-film ZnO/CdS/CuInXGal-XSe2 /Mo Photovoltaic Devices”, Mater. Res. Soc. Symp. Proc., 426, 183,1996.
38.G. Gordillo, G. Gediel, L.M. Caicedo, H. Infantic and J. Sandino, 2000, “Study of Optical, Structural and Morphological Properties on Cd-Free Buffer Materials”, Photovoltaic Specialists Conference. Conference Record of the Twenty-Eighth IEEE, pp 614-617,2000.
39.W. Eisele, A. Ennaoul, P. Schubert-Bischoff, "New cadmium-free buffer layers as heterojunction partners on Cu(In,Ga)(S,Se)2 thin film solar cells" , IEEE, pp.692-69, 2000.
40.G. Gordillo, G. Cediel, L. M. Caicedo, H. Infante and J. Sandino, "Study of optical, structural and morphological properties on Cd-free buffer materials, IEEE, pp.614-617,2001.
41.T. Nakada and M. Mizutani, “Improved efficiency of Cu(In,Ga)Se2 thin film solar cells with chemically deposited ZnS butter layers by air-annealing-formation of homojunction by solid phase diffusion”, Proc 28th IEEE PVSC, pp. 529-534, Anchorage, September,2000.
42.W. J. Jeong, S. K. Kimb and G. C. Parka, “Preparation and characteristic of ZnO thin film with high and low resistivity for an application of solar cell”, Thin Solid Films, 506-507, pp. 180-183, May,2006.
43.A. Luque and S. Hegedus, “Handbook of photovoltaic science and engineering”, John Wiley & Sons Ltd,2003.
44.Y. Hamakawa, “Thin-Film Solar Cells:Next Generation Photovoltaics and Its Applications”, Springer,2004.
45.Kegao Liua, Hong Liub, JiyangWangb, Lei Shia, “Synthesis and characterization of Cu2Se prepared y hydrothermal co-reduction”, Journal of Alloys and Compounds, May,2009.
46.Nakada, T., and Mizutani, M., Proc., “28th IEEE PVSC”, Anchorage, 15-22, pp.529-536,2000.
47.W. J. Jeong, S. K. Kim, G. C. Park, “Preparation and characteristic of ZnO thin film with high and low resistivity for an application of solar cell.”, Thin Solid Films. 506-507, p180-183,2006.
48.U. C. Bohnke and G. Kuhn, “Phase Relations in the Ternary System Cu-In-Se”, Journal of Materials Science, 22(5), pp. 1635-1641,1987.
49.H. W. Schock et al., “High Efficiency Chalcopyrite Based Thin Film Solar Cells-Results of the Eurocis-Colaboration”, Eleventh E.C. PVSEC, pp. 116-119, Montreux, October,1992.
50.B. M. Baso, V. K. Kapur and A. Halani, “Advances in High Efficiency CuInSe2 Solar Cells Prepared by the Selenization Technique”, Twenty Second IEEE PVSC, pp. 893-897, Las Vegas, October,1991.
51.半導體科技,http://ssttpro.acesuppliers.com/meg/meg_1_07917 90532005117234004316_4140.html
52.M. A. Contreras, J. Tuttle, A. Gabor, A. Tennant, K. Ramanathan, S. Asher, A. Franz, J. Keane, L. Wang, J. Scofield, and R. Noufi, Proc., “Photovolt. Energy Conv.”, IEEE, 68, Piscataway,1994.
53.F. Burmeister, C. Schfle, T. Matthes, M. Bhmisch, J. Boneberg and P. Leiderer, “Colloid Monolayers as Versatile Lithographic Masks”, Langmuir, 13(11), pp. 2983-2987,1997.
54.林麗娟,“X光繞射原理及其應用”,工業材料雜誌,86期,2月,1994。55.B. D. Cullity and S. R. Stock , “Elements of X-ray Diffraction (3rd ed)”, pp. 170, Prentice Hall, New Jersey,2001.
56.“User’s Manual”, Ametek Process & Analytical Instruments,2003.
57.陳力俊等編著,“材料電子顯微鏡學”,儀科中心出版,Chapter 11,新竹,1990。
58.汪建民等著,“材料分析”,中國材料科學學會,pp.121-125 & pp.169-173, 4月,2001。
59.李珠,“感應耦合電漿質譜儀技術及其在材料分析上的應用”,工業材料雜誌,181期,1月,2002。60.K. E. Jarvis, A. L. Gray and R. S. Houk, “Handbook of Inductively Coupled Plasma Mass Spectrometry?, Blackie, Glasgow,1992.
61.MyoungGuk Park et al., “Characteristics of Cu(In,Ga)Se2 (CIGS) thin films deposited by a direct solution coating process”, Journal of Alloys and Compounds, pp. 68-74,2012.
62.H. Jitsukawa, H. Matsushita and T. Takizawa,“Phase diagrams of the (Cu2Se, CuSe)-CuGaSe2 system and the crystal growth of CuGaSe2 by the solution method”, Journal of Crystal Growth, 186(4), pp. 587-593, March, 1998.
63.M. Krunks, O. Kijatkina, A. Mere, T. Varema, I. Oja, and V. Mikli, “Sprayed CuInS2 films grown under Cu-rich conditions as absorbers for solar cells”, Sol. Energy Mater. Sol. Cells, 87(1-4), pp. 207-214, May,2005.
64.D. Jiles, “Introduction to the Electronic Properties of Materials”, Advanced Materials, 7(4), pp. 423-424, April,1994.
65.B. E. Sernelious , K. F. Berggren, Z. C. Jin, I. Hamberg and C. G. Granqvist, “Band-gap tailoring of ZnO by means of heavy Al doping”, Physical Review B, 37(17), pp. 10244-10248,1998.
66.J.I. Pankove, Optical Processes in Semiconductors, pp. 93, Dover Inc., New York,1975.