本研究是先製備聚亞醯胺/二氧化鋯混成薄膜，先從TEM中顯示二氧化鋯粒徑約小於50nm，UV-vis的結果證明薄膜穿透性高在96-99%。混合後FTIR可以知道475cm-1與634 cm-1有二氧化鋯的結構。X 光吸收光譜(XAS)中的XANES分析三種樣品ZrO2 precursor sol、PZ sol與PZ film證明所製備樣品與標準品ZrO2 powder一樣為+4價，XANES定量分析不同合成比例下Zr含量，結果得知吸收強度隨二氧化鋯摻混比例成正比關係。Zr K吸收邊的EXAFS分析可知在經過300℃加熱薄膜上Zr的局部結構與6個O原子做鍵結，平均距離為2.12Å，而較遠端還有6個Zr原子。與溶液狀態相比較，顯示在薄膜上ZrO2有形成較大的團聚結構。從TGA使用空氣與氮氣量測熱裂解溫度得知，使用空氣Td均大於400℃，氮氣Td均大於417℃，並且900℃的殘餘量隨著二氧化鋯增加而增加。此結果與非破壞性XANES定量分析相一致。DSC結果可知Tg均大於304℃，顯示二氧化鋯與有機高分子有產生交聯結構限制鏈動，而提升玻璃轉移溫度，由以上分析可知混成材料有一定程度的耐熱性。此外，薄膜吸水性量測可知PZ12時最低，此特性可以用在低吸水性的電子產品上。在接觸角量測可以發現PZ12時油接觸角與水接觸角最大，因此表面能最低，故可降低薄膜內的結構缺陷，並提高載子遷移率，而製備出良好的有機無機混成薄膜。混成薄膜蒸鍍pentacene後用FESEM與AFM來分析，可知pentacene會隨二氧化鋯增加而顆粒變大及缺陷低，而PZ12有緻密性高結晶顆粒大。
電性質分析中，聚亞醯胺/二氧化鋯混成材料PZ0-PZ12之介電常數從4.04增加至8.10，但在PZ15下降至5.28，量測漏電流 (-2 MV cm-1)均小於10-9 Acm-2。載子遷移率從PZ0為2.78*10-1在PZ12時為4.15*10-1，但在PZ15下降至3.34*10-1，開關比Ion/Ioff在PZ0時為1.3*105在PZ12時增加至1.8*105，但在PZ15下降1.8*104，臨界電壓都趨近於零，由以上結果可以得知有機與無機材料二氧化鋯有成功混合，摻混比例為PZ12是最好的。

In this work, the organic/inorganic hybrid thin film, polyimide/ZrO2 (PZ), were prepared and its pentacene based organic thin film transistor (OTFT) were also made to investigate the correlation between the performance and the concentration of ZrO2 in dielectric layer. To study the effect of ZrO2, a series of PZn (n=0, 2, 5, 8, 10, 12, and 15; n is the weight percentage of Zr thin films) were characterized by TEM, UV-vis, FTIR, X-ray absorption spectroscopy (XAS), TGA, and DSC. UV-vis demonstrated the high transmittance about 96-99% in each film. The FTIR results indicated vibrational frequencies of ZrO2 are around 475cm-1 and 634 cm-1. Zr K-edge XANES displayed the absorption intensity is proportional to the blending ratio of ZrO2. EXAFS analysis indicated the ZrO2 formed a bigger cluster in the film than that in solution state. Based on the pyrolysis temperatures Td in TGA and the glass transition temperature Tg in DSC measurements, some cross-link interactions existed between ZrO2 and polyimide so that the Td and Tg were increased, which also indicated that the hybrid materials possessed good thermal stability. The char yields of TGA analysis are increasing with the increased of ZrO2 contents at 900℃. This is consistent with the nondestructive Zr K-edge XANES analysis. The contact angles analysis of water and diiodomethane indicated the PZ12 displayed the largest contact angles, lowest surface energy and lowest water absorbance so as to reduce the structural defects and enhance the carrier transportation, which can be applied to the water-resistant electronic products. The FESEM and AFM analysis of pentacene based OTFT indicated the particle size of pentacence will be increased as the increasing of ZrO2 concentration and reducing the surface defect of the thin film. Among PZ0-PZ12, the pentacene deposited on PZ12 displayed the largest particle size. The analysis of electric properties indicated that the dielectric constant is increased from 4.04 on PZ0 to 8.10 on PZ12, but decreased on PZ15. All the leakage current (-2 MV cm-1) is less than 10-9 Acm-2. Carrier mobility of PZ0-PZ12 is increased from 2.78*10-1 to 4.15*10-1, but decreased to 3.34* 10-1 on PZ15. The ratio of Ion/Ioff is increased from 1.3*105 on PZ0 to 1.8*105 on PZ12, but dropped to 1.8*104 at PZ15. Furthermore, all the threshold voltage is close to zero. Based on the above results, we are succeeded in the synthetic organic/inorganic hybrid thin film and the PZ12 is the best performance among the films.

中文摘要 I
ABSTRACT II
誌謝 III
表目錄 VI
圖目錄 VII
第一章 緒論 1
1-1 前言 1
1-2 文獻回顧 2
1-2-1聚亞醯胺簡介 2
1-2-1-1 亞醯胺化方法 4
1-2-2二氧化鋯的基本性質 7
1-2-3 X光吸收光譜儀(X-ray Absorption Spectroscopy：XAS) 8
1-2-4 有機無機奈米混成複合材料 11
1-2-5 溶膠-凝膠法製程 13
1-2-5-1 溶膠-凝膠法原理 13
1-2-6 旋轉塗佈 16
1-2-7介電常數(dielectric constant) 17
1-2-8有機電晶體操作原理 17
1-2-9有機薄膜電晶體的結構 19
1-2-10重要的有機電晶體參數 20
1-2-10-1載子移動率( Field-Effect Mobility) 20
1-2-10-2臨界電壓(Threshold Voltage：VT) 20
1-2-10-3次臨界擺幅 ( Subthrehold Swing：s.s.) 21
1-2-10-4漏電流(Leakage Currents) 21
1-2-10-5開關電流比(On/Off Current Ratio, Ion/off) 22
1-2-10-6接觸電阻(Contact Resistance) 22
1-2-11有機薄膜電晶體各層材料介紹 23
1-3 研究動機及目的 28
第二章 實驗 30
2-1實驗藥品 30
2-2 實驗裝置及儀器 32
2-2-1 實驗裝置 32
2-2-2 分析儀器 33
2-3 混成薄膜性質之鑑定項目 35
2-3-1顯微結構分析 35
2-3-2光學分析 35
2-3-3結構分析 35
2-3-4熱性質分析 41
2-3-5表面型貌分析 42
2-3-6電性質分析 43
2-4 實驗方法及步驟 44
2-4-1 製備聚亞醯胺/二氧化鋯混成光學薄膜 44
2-4-2聚亞醯胺/二氧化鋯高介電混成膜製備OTFT 45
2-4-3聚亞醯胺/二氧化鋯X光吸收光譜量測 46
第三章 結果與討論 52
3-1 結構分析聚亞醯胺/無機二氧化鋯混成薄膜 52
3-1-1顯微結構分析 53
3-1-2光學性質分析 54
3-1-3結構分析 55
3-1-4熱性質分析 62
3-1-5薄膜表面型態分析 66
3-1-6接觸角與吸水性 73
3-1-7電性質分析 79
3-2聚亞醯胺/二氧化鋯混成薄膜應用於元件性質 82
3-2-1主動層表面形態分析 83
3-2-2混成薄膜之OTFT元件電性質分析 89
第四章 結論 101
第五章 參考文獻 103
附錄 109

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