臺灣博碩士論文加值系統

近年來的研究指出場效電晶體作為氣體感測器之靈敏度極高，其中以矽薄膜場效電晶體的電性較為穩定，且合於現有之互補式金屬氧化物半導體(CMOS)製程，在製程上較為方便，更可以在其氧化層表面修飾化學分子以對偵測目標做專一性偵測，所以矽薄膜場效電晶體是一種良好的感測平台。
本論文中於矽薄膜場效電晶體(Si-FET)表面修飾 3-氨基丙三乙氧基矽烷(APTES)作為探針分子進行氣體偵測。因為矽薄膜的穩定與均勻性，使我們有機會對氣體濃度進行穩定的定性與定量。
本論文主要成果有三 : 1. 醋酸氣體使 Si-FET 電流上升，但氨氣使 Si-FET 電流下降，因此可以偵測並區此兩種氣體。針對待測氣體設計 不同探分子便可以提供選擇性。2. 以氨氣先將電晶體表面做飽和反應，並將此時Si-FET的訊號作為基準點。每次偵測醋酸後，於常溫下通入氮氣可以使醋酸脫離，並使訊號回到基準值，達成再現性。3. 通入醋酸時， Si-FET 的訊號隨時間變化速率與醋酸濃度有特定關係式，因此可由變化速率推得待側氣體的濃度。目前偵測醋酸的靈敏度可達到 34 ppb(mole比)。

In recent years, Many researches have demonstrated that field effect transistor (FET) as gas sensor had high sensitivity, in particular, the silicon FET has stable electric characteristics, and compatible with currently existed CMOS process , most of all, silicon FET oxide surface can be chemically modified with molecules to specifically detects targets ( biomolecules, gases, light…..etc.) So silicon FET can be used as a good detecting platform.
In this research, we had modified (3-Aminopropyl)triethoxysilane (APTES) on the silicon FET oxide surface to carry gas detection. Due to the stability and uniformity of silicon thin film, we had the chance to making quantitative and qualitative analysis for gas detection.

There are three main results in this research: first, acetic acid gas make the current of silicon FET rising, but ammonia gas makes the current of silicon FET declining, the selectivity of detection can be achieved by designing different probe molecule; second, before acetic gas detection, using ammonia to react with the oxide surface of silicon FET to saturation, then the signal produced by ammonia saturating reaction is used as the basic signal value, each time after acetic gas detection , nitrogen gas purging can make the signal back to the basic signal value, achieving the reproducibility; finally, during acetic gas detection, it has been discovered that there’s a specific mathematical relationship between the gas concentration and the rate of signal variation, thus we can determine gas concentration by the rate of signal variation. The sensitivity of acetic gas detection at present is up to 34 ppb (partial mole).

中文摘要 i
英文摘要 ii
誌謝 iv
目錄 vi
圖、表、式目錄 vii
一、緒論 1
二、文獻回顧
2-1. 矽場效應電晶體氣體感測器 3
2-2. 矽烷偶聯劑 15
2-3. 表面修飾驗證 18
2-4. 表面分子加電場 21
2-5. 交流電型矽場效電晶體感測平台 23
三、實驗部分
3-1.實驗藥品與器材 25
3-2. 電性設備 27
3-2.1晶片載具與加電場裝置 27
3-3. 氣態偵測系統 30
3-4. 實驗流程 34
四、結果與討論
4-1. 表面修飾驗證 41
4-2. 氣體偵測與定性 45
4-3. 表面分子加電場後氣體偵測 48
4-4. 氣體反應機制與偵測回復 50
4-5 . 氣體定量分析 56
五、結論 62
參考文獻 63

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