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研究生:李智翔
研究生(外文):Chih-Hsiang Li
論文名稱:氮化銦鎵薄膜的異常電性分析
論文名稱(外文):Anomalous electric characteristics of InGaN thin films
指導教授:張本秀
口試委員:吳永富蔡子萱張本秀
口試日期:2016-06-29
學位類別:碩士
校院名稱:國立臺北科技大學
系所名稱:資源工程研究所
學門:工程學門
學類:材料工程學類
論文種類:學術論文
畢業學年度:104
中文關鍵詞:簡併半導體電子-電子交互作用弱侷限霍爾效應量測氮化銦鎵
外文關鍵詞:Degenerate semiconductorHall effect measurementWeak localizationElectron-electron interactionInGaN
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本研究主要探討氮化銦鎵(InxGa1-xN;銦含量x約65 ~ 69 %)的電阻率,霍爾量測結果顯示樣品皆為電子式傳導載子(n-type),載子濃度約1*1019 cm-3,為一簡併半導體系統.在室溫時,薄膜變電流之電阻率量測結果呈現非線性特徵;在溫度範圍從90K到290K時,定電流的變溫電阻率量測顯示電阻率隨溫度增加而遞減的特性,但是不同於一般傳統半導體的熱激發機制;本論文藉由無序狀態導致的電子-電子交互作用以及弱侷限效應的機制模型分析討論這種異常電阻率特性.
Resistivity measurements of n-type InxGa1-xN (x = 0.65 ~ 0.69) thin films by MOCVD were reported. The films studies are regarded as a highly degenerate semiconductor system with a high carrier concentration of 1*1019 cm-3. Resistivity decreases as temperature increases from 80 K to 270 K and show current-dependent behavior at room temperature. The anomalous results may not be explained by the Boltzmann approach for conventional semiconductor, and are explained in the terms of the electron-electron interaction (EEI) and the weak localization (WL) phenomenon at low temperature in this work.
中文摘要 i
英文摘要 ii
誌謝 iii
目錄 iv
表目錄 v
圖目錄 vi
第一章 緒論 1
1.1 前言 1
1.2 研究目的 3
第二章 文獻回顧 4
2.1 氮化銦鎵特性 4
2.2 簡併半導體 8
2.2.1 電子-電子交互作用 9
2.2.2 弱侷限效應 12
2.3 異常的電阻溫度相依性 13
第三章 實驗流程與分析方法 17
3.1 實驗流程 17
3.1.1 樣品製備 18
3.1.2 快速熱退火處理 18
3.2 分析方法 19
3.2.1 X光繞射分析儀 19
3.2.2 拉曼光譜分析儀 21
3.2.3 霍爾效應量測儀 22
第四章 結果與討論 26
4.1 X-Ray繞射分析 26
4.2 氮化銦鎵特性分析 31
4.2.1 Raman光學量測 31
4.2.2 Hall電性量測分析 35
第五章 結論 69


參考文獻 72
P. P. Chen, H. Makino, T. X. Li, J. B. Wang, W. Lu, and T. Yao,“Optical properties of InN films grown by molecular beam epitaxy at different conditions,” Thin Solid Films 513, 166 (2006).
V. W. L. Chin, T. L. Tansley, and T. Osotchan,“Electron mobilities in gallium, indium, and aluminum nitrides,” J. Appl. Phys. 75, 7365 (1994).
Kun-Ching Shen, Tzu-Yu Wang, Dong-Sing Wuu, and Ray-Hua Horng. “High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target,” Optics Express, Vol. 20, No. 14, 15149, (2012).
Quan-Bao Ma, Ruben Lieten, Gustaaf Borghs, “Effects of annealing on the structural properties of indium rich InGaN films,” J Mater Sci. Mater Electron 25, 1197–1201, (2014).
X.Wang,A. Yoshikawa, “Progress in Crystal Growth and Characterization of Materials,” 48,49, 42-103, (2004).
Cheng-Che Li, Dong-HauKuo, Ying-ShengHuang, “The effect of temperature on the growth and properties of green light-emitting In0.5Ga0.5N films prepared by reactive sputtering with single cermet target,” Materials Science in Semiconductor Processing 29, 170–175, (2015).
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, “Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates,” Appl. Phys. Lett. 72, 2014, (1998).
Wikipedia, “Wurtzit crystal structure,”
https://en.wikipedia.org/wiki/Wurtzite_crystal_structure
Chia-hsuan Hu, “Surface characterizations of GaN nanostructure grown on γ-LiAlO2 substrate by plasma-assisted MBE,” Master’s thesis, National Sun Yat-sen University, (2009).
A. Yildiz, S.B. Lisesivdin, S. Acar, M. Kasap, M. Bosi, “Electron Transport in Ga-Rich InxGa1−xN Alloys,” Chin. Phys. Lett. 24, 2930, (2007).
P.A. Lee, T.V. Ramakrishnan, “Disordered electronic systems,” Rev. Modern Phys. 57, 287, (1985).
劉品均,施佑蓉譯/William F.Smith.原著, “材料科學概論/Foundations of Materials Science and Engineering 3/E,” 臺灣:高立圖書有限公司, (2008).
I. Ho and G. B. Stringfellow. “Solid phase immiscibility in InGaN,” Appl. Phys. Lett. 69, 2701, (1996).
張旭民, “寶石與鑑定,”臺灣:國立臺北科技大學,(2006).
魏榮君, 劉立基, 洪連輝譯/Charles Kittel原著, “固態物理學導論/Introduction to solid state physics,” 臺灣:高立圖書有限公司, (2011).
張鼎張, 劉柏村譯/施敏,伍國珏原著, “半導體元件物理學(上冊) ,” 臺灣:國立交通大學, (2008).
張鼎張, 劉柏村譯/施敏,伍國珏原著, “半導體元件物理學(下冊) ,” 臺灣:國立交通大學, (2009).
劉恩科,朱秉升,羅晉生, “半導體物理學,” 臺灣:國防工業出版社, (2011).
李明洋, 唐九君, “石墨烯的量子霍爾效應及弱侷限效應,” 臺灣:物理雙月刊, 33卷2期, 208-213, (2011).
王世光, “傳導電子的弱侷限化現象,” 中國:物理, 19卷10期, 597-600.
K. Kumakura, T. Makimoto, N. Kobayashi, “Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy,” J. Appl. Phys. 93, 3370, (2003).
S.K. Lin, K.T. Wu, C.P. Huang, C.T. Liang, Y.H. Chang, Y.F. Chen, P.H. Chang, N.C. Chen, C.A. Chang, H.C. Peng, C.F. Shih, K.S. Liu, T.Y. Lin, “Electron transport in In-rich InxGa1−xNInxGa1−xN films,” J. Appl. Phys. 97, 046101, (2005).
A. Yildiz, S.B. Lisesivdin, M. Kasap, M. Bosi. “ Anomalous temperature dependence of the electrical resistivity in In0.17Ga0.83N,” Solid State Communications 149, 337-340, (2009).
P.C. Chang, J. Grace Lu, “Temperature dependent conduction and UV induced metal-to-insulator transition in ZnO nanowires,” Appl. Phys. Lett. 92, 212113, (2008).
B.L. Altshuler, A.G. Aronov, in: A.L. Efros, M. Pollak (Eds.), “Electron_Electron Interactions in Disordered Systems,” North-Holland, New York, (1985).
P. Dai, Y. Zhang, M.P. Sarachik, “Electrical conductivity of metallic Si:B near the metal-insulator transition,” Phys. Rev. B 45, 3984, (1992).
G.A. Thomas, A. Kawabata, “Temperature-dependent conductivity of metallic doped semiconductors,” Phys. Rev. B 26, 2113, (1982).
莊耿林, “以霍爾效應量測法對氮化鎵作電性分析,” 碩士論文, 國立中山大學物理系, 臺灣, (2003).
J. Volger, “Note on the Hall potential across an inhomogeneous conductor,” Phys. Rev., 79, 1023-24 (1950).
Van der Pauw, L. J. “A method of measuring specific resistivity and Hall effect of discs of arbitrary shape,” Philips Res. Report, 13, 1 (1958).
Chang Q Sun, “Relaxation of the Chemical Bond:Skin Chemisorption Size Matter ZTP Mechanics H2O Myths,” Berlin:Springer, (2014).
李弘貿, “高銦含量氮化銦鎵(InGaN)混晶系統之結構及光譜研究,” 碩士論文, 國立清華大學, 臺灣, (2004).
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