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研究生:卓剛甫
研究生(外文):Cho Kangfu
論文名稱:第五代通訊系統之帶通濾波器與 寬頻低雜訊放大器之設計
論文名稱(外文):Design of Bandpass Filter for Fifth Generation Communication System and Wideband LNA
指導教授:王紳
口試委員:張繼禾蔣孟儒
口試日期:2016-07-09
學位類別:碩士
校院名稱:國立臺北科技大學
系所名稱:電子工程系研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
畢業學年度:104
語文別:中文
中文關鍵詞:第五代通訊系統、IPD(Integrated Passive Device)、CMOS、濾波器、環型、電阻式回授、源極電感、低雜訊放大器
外文關鍵詞:Fifth-Generation Mobile CommunicationIPD(Integrated Passive Device)CMOSfilterring typeresistive feedbackinductive peakinglow noise amplifier.
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現今的無線移動式通訊系統正往第五世代通訊系統發展(Fifth-Generation Mobile Communication),RF前端電路為首要的前端電路。基於目前主要研究方向為28/39GHz之頻段,於本篇論文之第二章中介紹了雙頻切換式帶通濾波器,使用了GIPD/0.18umCMOS製程製作。因傳統之帶通濾波器基於CMOS製程金屬厚度較薄,相比GIPD製程損耗較大,所以採用了GIPD製程作為帶通濾波器,其優點為損耗較小,最後搭配上CMOS開關達成28/39GHz之雙頻切換式帶通濾波器。其損耗在28/39GHz分別為4.5/.4.7-dB,其隔離度為35/30.1-dB,最後其晶片面積為5.4mm2。

現今無線通訊之頻段非常多,若要為其各個頻帶製作其對應頻段電路,則成本非常之高。所以本篇論文製作了一個寬頻放大器,其頻帶包含了0.6~5.8 GHz。於第三章中,使用了0.18m製程製作了寬頻低雜訊放大器(Wideband Low Noise Amplifier),其工作頻率為0.6~5.8GHz,其最高增益為11.5dB,雜訊為4.7dB,IIP3為 1.82,最後晶片面積為0.8 mm2。
Todays wireless mobile communication system is to develop a fifth-generation communication systems that RF front-end circuit of the primary front-end circuit. Based on the current main research directions for 28 / 39GHz of the band, in the chapter two of this paper we introduce dual switchable bandpass filter was used GIPD / 0.18-m CMOS process. Because tradition bandpass filter based on thin metal CMOS process, the loss large than GIPD process, so using GIPD process as a band-pass filter, the advantage of a smaller loss, reached the final with the CMOS switch 28 / 39GHz the dual switchable bandpass filter. Its loss in the 28 / 39GHz respectively 4.5 / 4.7-dB, its isolation is 35 / 30.1-dB, which finally die area of 5.4mm2.

Todays wireless communications band are too many. In order to make their respective bands corresponding band circuits which are very high cost. Therefore, this paper produced a broadband amplifier which using feedback resistors, and inductors peaking structure, which includes the band 0.6~5.8 GHz. In the third chapter, using UMC 0.18-m process produced a wideband low-noise amplifier, the operating frequency of 0.6~5.8GHz, its highest gain of 11.5dB, noise is 4.7dB, and IIP3 1.82 for the final wafer area of 0.8 mm2.
摘 要 i
Abstract ii
誌 謝 iv
Table of Content v
List of Figure vi
List of Tables viii
Chapter 1 Introduction 1
1.1 Motivation 1
1.2 List of Contribution 2
1.3 Thesis Organization 3
Chapter 2 A CMOS/IPD Switchable 28/39-GHz Bandpass Filter 4
2.1 Introduction 4
2.2 Circuit Design 7
2.3 Implementation and Measurement 23
2.4 Summary 29
Chapter 3 A CMOS 0.6~5.8GHz Wideband LNA Using Resistor Feedback 30
3.1 Introduction 30
3.2 Circuit Design 32
3.3 Implementation and Measurement 38
3.4 Summary 46
Chapter 4 Conclusion 47
Reference 48
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