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研究生:薛丞堯
研究生(外文):Cheng-Yao Shiue
論文名稱:CMOS MEMS三軸微磁通閘磁場感測器設計與特性分析
論文名稱(外文):Design and Characterization of CMOS MEMS 3-Axis Micro-Fluxgate Magnetic Sensor
指導教授:鄭振宗鄭振宗引用關係呂志誠
口試委員:陳坤麟廖書賢
口試日期:2016-06-29
學位類別:碩士
校院名稱:國立臺北科技大學
系所名稱:機電整合研究所
學門:工程學門
學類:機械工程學類
論文種類:學術論文
畢業學年度:104
語文別:中文
中文關鍵詞:磁通閘、三軸磁場感測器、磁通導引器、平面式磁通閘
外文關鍵詞:3aix fluxgate、magnetic sensor、fluxguide、CMOS-MEMS、planar
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本研究論文以實驗室團隊前人所設計出的雙軸平面微磁通閘磁感測器作為理論基礎及設計雛型,透過國家晶片中心所提供CMOS MEMS 0.35μm製程設計出全新的平面化三軸微磁通閘磁場感測器,晶片大小為2.5 mm × 2.5 mm,其磁芯以黃光微影及金屬濕蝕刻製程製作出放射狀磁芯,並將磁芯及磁通導引器對準貼合至晶片上完成三軸磁通閘結構,進而將垂直於平面的Z軸磁場會聚並導引至晶片平面上的感應線圈,使其能感測到Z軸磁場。藉由貼合不同的磁芯寬度、給予不同的激發電流及激發頻率來探討磁通閘感測器的磁場感測能力,經實驗結果顯示三軸感測能力發揮最平均的磁芯寬度為100μm,當給予激發電流為54 mA激發頻率為50 kHz時,X軸的電壓磁場轉移率可達10 V/T,頻率1Hz附近的磁場雜訊約為1.53nT/√Hz,Y軸電壓磁場轉移率可達9.45V/T,在頻率1Hz附近的磁場雜訊約為2.34nT/√Hz,感測Z軸時電壓磁場轉移率可達3.95 V/T,在頻率1Hz附近的磁場雜訊約為6.66nT/√Hz,除了電壓磁場轉移及雜訊量測之外,本論文亦做了地磁量測及正交度量測之實驗,其實驗結果期望能有助於未來開發靈敏度更高的CMOS MEMS平面化微磁通閘磁場感測器。
This research followed the previous research results of CMOS MEMS fluxgate in our laboratory as the basic theoretical knowledge. In this work, a new type of 3-axis micro fluxgate with planar coils, magnetic core and flux guide techniques was designed and manufactured. In this design, the sensor dimension is2.5 mm × 2.5 mm. We used double metal layers for both excitation and sensingcoils. Eight sensing coils were implemented for detection of 3-axis magnetic field with four coils at diagonal positions for sensing the z-axis field component and the other four coils connected in pairs for sensing the x- and y-axis field components. The soft magnetic core, which is made of Metglas cobalt-based magnetic ribbon by wet etching, was aligned and mounted onto the fluxgate chip. Besides, the cylindrical ferrite flux guide with high magnetic permeability rate was placed at the center of the fluxgate chip, which induces the bending flux lines that can be detected by the planar sensing coils. The results showed that with sinewave excitation current of 54 mA at 50 kHz and 2nd harmonics phase sensitive detection, the maximum sensitivity of x-axis is 10 V/T and magnetic field noise is about 1.53 nT/√Hz@1Hz, and sensitivity of y-axis is found to be9.45 V/T with magnetic field noise of 2.34 nT/√Hz@1Hz. Whereas, for z-axis, the sensitivity is 3.95 V/T and magnetic field noise is about 6.66 nT/√Hz@1Hz. For the real application, the designed CMOS 3-axis fluxgate was used successfully as an electronic compass. The obtained results are promising solution to realize a miniature planar 3-axis microfluxgate sensor. Further works to integrate the flux guide, magnetic core, and planar coils into chip scale combining with the CMOS transducer will help realizing a system-on-a-chip (SoC) based fluxgate sensor.
摘要 i
Abstract ii
誌謝 iv
目錄 v
表目錄 vii
圖目錄 viii
第一章 緒論 1
1.1研究背景 1
1.2研究動機與目的 3
1.3文獻回顧 4
1.4論文架構 9
第二章 感測器原理 10
2.1 磁通閘原理 10
2.1.1電流磁效應 10
2.1.2磁性材料之磁化現象 11
2.1.3電磁感應原理 13
2.1.4磁通閘之結構與運作原理 14
2.2磁芯材料性質 17
2.3磁通導引器 18
第三章 實驗方法與步驟 21
3.1設計流程 21
3.2晶片式磁通閘設計 22
3.2.1設計概念 22
3.2.2平面式磁通閘設計 23
3.2.3光罩設計 28
3.3 晶片後製程製作 29
3.3.1磁芯材料之選擇 29
3.3.2磁芯製作、貼合及鋁線焊接製程 30
3.3.3印刷電路板製作與鋁線焊接 32
3.4量測系統 34
第四章 結果與討論 37
4.1感應曲線與線性度分析 37
4.2電壓磁場轉移率 56
4.3正交度量測 61
4.4雜訊量測 68
4.5環境量測地磁之結果 77
第五章 結論 80
5.1結論 80
參考文獻 82
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