本論文致力於液相氧化法在磷化銦鎵和砷化鋁鎵高電子移動率電晶體作為閘 極介電層之應用。相較於其他的氧化法而言，液相氧化法是一種簡易及經濟的化學方法。
磷化銦鎵金氧半高電子移動率電晶體直流特性而言，經量測得到最大汲極電流密度為203.4 mA/mm，在VDS = 2 V時最大轉導峰值為128.5 mS/mm，兩端反向崩潰電壓為 -13 V。砷化鋁鎵金氧半高電子移動率電晶體直流特性而言，經量測得到最大汲極電流密度為 149.3 mA/mm，在VDS = 2 V時最大轉導峰值為100.6 mS/mm，兩端反向崩潰電壓為 -38.5 V。
對磷化銦鎵高頻特性而言，傳統高電子移動率電晶體及金氧半高電子移動率電晶體之截止頻率分別為 4.5 GHz 和 5.9 GHz，最大震盪頻率分別為 4.6 GHz 和 8.4 GHz。對砷化鋁鎵高頻特性而言，傳統高電子移動率電晶體及金氧半高電子移動率電晶體之截止頻率分別為 3.8 GHz 和 5.7 GHz，最大震盪頻率分別為 3.9 GHz 和 6.3 GHz。低頻雜訊也有相當程度的改善。
在本研究中，利用液相氧化法於磷化銦鎵和砷化鋁鎵金氧半高電子移動率電晶體之閘極絕緣層製作上，可得到直流及高頻特性的提升，證明其具有高速與低雜訊的應用潛力。

Native oxide as gate insulators on InGaP and AlGaAs high electron mobility transistors (HEMT) were fabricated and characterized in this thesis through a liquid phase oxidation (LPO) method. Compared with others, the method is a simple, economic, and effective technique used to form a native oxide layer on GaAs material at near-room temperature (30-70°C).
For the InGaP MOS-HEMT DC characteristics, the maximum drain current density is 203.4 mA/mm, the maximum peak transconductance is 128.5 mS/mm at the VDS = 2 V, two-terminal diode of the reverse breakdown voltage is -13 V for MOS-HEMT. For the AlGaAs MOS-HEMT DC characteristics, the maximum drain current density is 149.3 mA/mm, the maximum peak transconductance is 100.6 mS/mm at the VDS = 2 V, two-terminal diode of the reverse breakdown voltage is -38.5 V for MOS-HEMT.
For the InGaP Microwave characteristics , the cut-off frequencies of conventional HEMT and MOS-HEMT are 4.5 GHz and 5.9 GHz; the maximum oscillation frequencies are 4.6 GHz and 8.4 GHz, respectively. For the AlGaAs Microwave characteristics , the cut-off frequencies of conventional HEMT and MOS-HEMT are 3.8 GHz and 5.7 GHz; the maximum oscillation frequencies are 3.9 GHz and 6.3 GHz, respectively. The low frequency noises are improved significantly.
Consequently, the InGaP and AlGaAs MOS-HEMT with liquid phase oxidized GaAs as gate insulator is promising for low noise and high speed applications.

誌謝 I
中文摘要 II
ABSTRACT III
CONTENTS IV
LIST OF FIGURES VII
LIST OF TABLES X
Chapter 1 Introduction 1
1.1 Background 1
1.2 Organization 4
Chapter 2 Experimental Procedures and Characterizations of LPO on InGaP and AlGaAs 6
2.1 Fabricate the Liquid Phase Oxidation films 6
2.2 Oxidation Mechanism 7
Chapter 3 Fabrication Procedures and Performance of InGaP HEMT with LPO 11
3.1 Introduction 11
3.2 Device Structure 11
3.3 InGaP MOS-HEMT 12
3.4 The DC Experiment Results 21
3.4.1 The Saturated Drain Current 21
3.4.2 The Transconductance 22
3.4.3 The Subthreshold Swing 23
3.4.4 The Two-terminal Diode Characteristics 23
3.4.5 The Gate Leakage Current 24
3.5 The Microwave Experiment Results 25
3.5.1 The Cutoff Frequency & The Maximum Oscillation Frequency 25
3.5.2 The Flicker Noise 25
3.6 Summary 26
Chapter 4 Fabrication Procedures and Performance of AlGaAs HEMT with LPO 41
4.1 Introduction 41
4.2 Device Structure 42
4.3 AlGaAs MOS-HEMT 42
4.4 The DC Experiment Results 47
4.4.1 The Saturated Drain Current 47
4.4.2 The Transconductance 47
4.4.3 The Subthreshold Swing 48
4.4.4 The Two-terminal Diode Characteristics 48
4.4.5 The Gate Leakage Current 48
4.5 The Microwave Experiment Results 49
4.5.1 The Cutoff Frequency & The Maximum Oscillation Frequency 49
4.5.2 The Flicker Noise 49
4.6 Summary 49
Chapter 5 Conclusions and Future Works 64
5.1 Conclusions 64
5.2 Future works 67
REFERENCE 68

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