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Chapter 1 1.J. Coonrod, Different Copper Foils for Different Reasons, in the PCB Magazine. 2012. p. 60-64. 2.C.B. Yates, C.T. Cheng and A.M. Wolski, Process for the manufacture of high quality very low profile copper foil and copper foil produced thereby. 1999, US Patent 5863410. 3.B.M. Luce and B.L. Berdan, Process and apparatus for electroplating copper foil. 1990, US Patent 4898647. 4.P.C. Andricacos, C. Uzoh, J.O. Dukovic, J. Horkans and H. Deligianni, Damascene copper electroplating for chip interconnections. IBM Journal of Research and Development, 1998. 42(5): p. 567-574. 5.K.K.H. Wong, S. Kaja and P.W. DeHaven, Metallization by plating for high-performance multichip modules. IBM Journal of Research and Development, 1998. 42(5): p. 587-596. 6.C.-T. Ko and K.-N. Chen, Wafer-level bonding/stacking technology for 3D integration. Microelectronics Reliability, 2010. 50(4): p. 481-488. 7.K.N. Tu, Reliability challenges in 3D IC packaging technology. Microelectronics Reliability, 2011. 51(3): p. 517-523. 8.K.N. Chen, C.S. Tan, A. Fan and R. Reif, Morphology and Bond Strength of Copper Wafer Bonding. Electrochemical and Solid-State Letters, 2004. 7(1): p. G14-G16. 9.C.M. Liu, H.W. Lin, Y.S. Huang, Y.C. Chu, C. Chen, D.R. Lyu, K.N. Chen and K.N. Tu, Low-temperature direct copper-to-copper bonding enabled by creep on (111) surfaces of nanotwinned Cu. Sci Rep, 2015. 5: p. 9734. 10.H.-Y. Hsiao, C.-M. Liu, H.-w. Lin, T.-C. Liu, C.-L. Lu, Y.-S. Huang, C. Chen and K.N. Tu, Unidirectional Growth of Microbumps on (111)-Oriented and Nanotwinned Copper. Science, 2012. 336(6084): p. 1007-1010. 11.A. Jourdain, S. Stoukatch, P.D. Moor, W. Ruythooren, S. Pargfrieder, B. Swinnen and E. Beyne. Simultaneous Cu-Cu and Compliant Dielectric Bonding for 3D Stacking of ICs. in 2007 IEEE International Interconnect Technology Conferencee. 2007.
Chapter 2 1.R. Akolkar and U. Landau, Mechanistic Analysis of the "Bottom-Up" Fill in Copper Interconnect Metallization. Journal of the Electrochemical Society, 2009. 156(9): p. D351-D359. 2.Y. Cao, P. Taephaisitphongse, R. Chalupa and A.C. West, Three-additive model of superfilling of copper. Journal of the Electrochemical Society, 2001. 148(7): p. C466-C472. 3.U. Emekli and A.C. West, Simulation of the Effect of Additives on Electrochemical Nucleation. Journal of the Electrochemical Society, 2010. 157(9): p. D479-D485. 4.A. Radisic, O. Luhn, H.G.G. Philipsen, Z. El-Mekki, M. Honore, S. Rodet, S. Armini, C. Drijbooms, H. Bender and W. Ruythooren, Copper plating for 3D interconnects. Microelectronic Engineering, 2011. 88(5): p. 701-704. 5.I. Volov, T. Saito and A.C. West, Investigation of Copper Plating and Additive Interactions in the Presence of Fe3+/Fe2+ Redox Couple. Journal of the Electrochemical Society, 2011. 158(6): p. D384-D389. 6.W.-P. Dow, M.-Y. Yen, S.-Z. Liao, Y.-D. Chiu and H.-C. Huang, Filling mechanism in microvia metallization by copper electroplating. Electrochimica Acta, 2008. 53(28): p. 8228-8237. 7.N.T.M. Hai and P. Broekmann, Smart Hybrid Polymers for Advanced Damascene Electroplating: Combination of Superfill and Leveling Properties. ChemElectroChem, 2015. 2(8): p. 1096-1099. 8.T.M.T. Huynh, F. Weiss, N.T.M. Hai, W. Reckien, T. Bredow, A. Fluegel, M. Arnold, D. Mayer, H. Keller and P. Broekmann, On the role of halides and thiols in additive-assisted copper electroplating. Electrochimica Acta, 2013. 89: p. 537-548. 9.S.K. Kim, D. Josell and T.P. Moffat, Electrodeposition of Cu in the PEI-PEG-Cl-SPS additive system - Reduction of overfill bump formation during superfilling. Journal of the Electrochemical Society, 2006. 153(9): p. C616-C622. 10.K. Kondo, T. Matsumoto and K. Watanabe, Role of additives for copper damascene electrodeposition experimental study on inhibition and acceleration effects. Journal of the Electrochemical Society, 2004. 151(4): p. C250-C255. 11.K. Kondo, N. Yamakawa, Z. Tanaka and K. Hayashi, Copper damascene electrodeposition and additives. Journal of Electroanalytical Chemistry, 2003. 559: p. 137-142. 12.T.P. Moffat, D. Wheeler, S.K. Kim and D. Josell, Curvature enhanced adsorbate coverage model for electrodeposition. Journal of the Electrochemical Society, 2006. 153(2): p. C127-C132. 13.V.H. Hoang and K. Kondo, Extreme fast filling of conical shape through-silicon vias in 3 minutes and additive optimization. Electrochimica Acta, 2016. 212: p. 270-276. 14.S.-M. Huang, C.-W. Liu and W.-P. Dow, Effect of Convection-Dependent Adsorption of Additives on Microvia Filling in an Acidic Copper Plating Solution. Journal of The Electrochemical Society, 2012. 159(3): p. D135-D141. 15.T.P. Moffat, D. Wheeler, S.K. Kim and D. Josell, Curvature enhanced adsorbate coverage mechanism for bottom-up superfilling and bump control in damascene processing. Electrochimica Acta, 2007. 53(1): p. 145-154. 16.N.T.M. Hai, J. Furrer, E. Barletta, N. Luedi and P. Broekmann, Copolymers of Imidazole and 1,4-Butandiol Diglycidyl Ether as an Efficient Suppressor Additive for Copper Electroplating. Journal of the Electrochemical Society, 2014. 161(9): p. D381-D387. 17.W.-P. Dow, H.-S. Huang, M.-Y. Yen and H.-C. Huang, Influence of Convection-Dependent Adsorption of Additives on Microvia Filling by Copper Electroplating. Journal of The Electrochemical Society, 2005. 152(6): p. C425-C434. 18.K. Kondo and H. Murakami Crystal Growth of Electrolytic Cu Foil. Journal of The Electrochemical Society, 2004. 151(7): p. C514-C518. 19.T. Chang, Y. Jin, L. Wen, C. Zhang, C. Leygraf, I.O. Wallinder and J. Zhang, Synergistic effects of gelatin and convection on copper foil electrodeposition. Electrochimica Acta, 2016. 211: p. 245-254. 20.W. Peng, G. Yi, F. Cai, T. He and X. Yang. Experimental analysis of pinhole on electrolytic copper foil and its prevention. in 2011 Second International Conference on Mechanic Automation and Control Engineering. 2011. 21.B. Blocken and C. Gualtieri, Ten iterative steps for model development and evaluation applied to Computational Fluid Dynamics for Environmental Fluid Mechanics. Environmental Modelling & Software, 2012. 33: p. 1-22. 22.J. Coonrod, Different Copper Foils for Different Reasons, in the PCB Magazine. 2012. p. 60-64. 23.T. Okubo, T. Sudo, T. Hosoi, H. Tsuyoshi and F. Kuwako. Signal transmission loss on printed circuit board in GHz frequency region. in 2013 IEEE Electrical Design of Advanced Packaging Systems Symposium (EDAPS). 2013. 24.M.Y. Koledintseva, A.G. Razmadze, A.Y. Gafarov, S. De, J.L. Drewniak and S. Hinaga. PCB conductor surface roughness as a layer with effective material parameters. in 2012 IEEE International Symposium on Electromagnetic Compatibility. 2012. 25.C.D. Xu, K.W.E. Cheng, R.S. Raghu and J.F. Liu. Characterization and modeling of copper foil conductor for high frequency power distribution. in 2015 6th International Conference on Power Electronics Systems and Applications (PESA). 2015. 26.B.M. Luce and B.L. Berdan, Process and apparatus for electroplating copper foil. 1990, US Patent 4898647. 27.N. Ibl and K. Schadegg, Surface Roughness Effects in the Electrodeposition of Copper in the Limiting Current Range. Journal of The Electrochemical Society, 1967. 114(1): p. 54-58. 28.Y.I. Yanson and M.J. Rost, Structural accelerating effect of chloride on copper electrodeposition. Angew Chem Int Ed Engl, 2013. 52(9): p. 2454-8. 29.W. Shao, G. Pattanaik and G. Zangari, Influence of Chloride Anions on the Mechanism of Copper Electrodeposition from Acidic Sulfate Electrolytes. Journal of The Electrochemical Society, 2007. 154(4): p. D201. 30.K.R. Hebert, Role of Chloride Ions in Suppression of Copper Electrodeposition by Polyethylene Glycol. 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Josell Electrodeposition of Copper in the SPS-PEG-Cl Additive System: I. Kinetic Measurements: Influence of SPS. Journal of The Electrochemical Society, 2004. 151(4): p. C262-C271. 36.H. Koichi, W. Yasuhiro, F. Akihiko, U. Daisuke, K. Koichiro, N. Tomoko, S. Masahiko, C. Mitsuyasu, T. Sotaro, S. Jun, H. Muneaki, N. Akira and K. Hiroshi, Copper Plating Method on Flat Surface for High Frequency Signal Transfer. Japanese Journal of Applied Physics, 2005. 44(9R): p. 6719. 37.S.J. Bleiker, A.C. Fischer, U. Shah, N. Somjit, T. Haraldsson, N. Roxhed, J. Oberhammer, G. Stemme and F. Niklaus, High-Aspect-Ratio Through Silicon Vias for High-Frequency Application Fabricated by Magnetic Assembly of Gold-Coated Nickel Wires. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2015. 5(1): p. 21-27. 38.C.B. Yates, C.T. Cheng and A.M. Wolski, Process for the manufacture of high quality very low profile copper foil and copper foil produced thereby. 1999, US Patent 5863410.
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Tu, Unidirectional Growth of Microbumps on (111)-Oriented and Nanotwinned Copper. Science, 2012. 336(6084): p. 1007-1010. 13.T.-C. Liu, C.-M. Liu, Y.-S. Huang, C. Chen and K.-N. Tu, Eliminate Kirkendall voids in solder reactions on nanotwinned copper. Scripta Materialia, 2013. 68(5): p. 241-244. 14.W.-L. Chiu, C.-M. Liu, Y.-S. Haung and C. Chen, Formation of nearly void-free Cu3Sn intermetallic joints using nanotwinned Cu metallization. Applied Physics Letters, 2014. 104(17): p. 171902. 15.C.M. Liu, H.W. Lin, Y.S. Huang, Y.C. Chu, C. Chen, D.R. Lyu, K.N. Chen and K.N. Tu, Low-temperature direct copper-to-copper bonding enabled by creep on (111) surfaces of nanotwinned Cu. Sci Rep, 2015. 5: p. 9734. 16.C. Chen, C.M. Liu, H.w. Lin, Y.S. Huang, Y.C. Chu, D.R. Lyu, K.N. Chen and K.N. Tu. Low-temperature and low-pressure direct copper-to-copper bonding by highly (111)-oriented nanotwinned Cu. in 2016 Pan Pacific Microelectronics Symposium (Pan Pacific). 2016. 17.K. 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Chapter 4 1.J.A. Switzer, C.-J. Hung, E.W. Bohannan, M.G. Shumsky, T.D. Golden and D.C. Van Aken, Electrodeposition of quantum-confined metal/semiconductor nanocomposites. Advanced Materials, 1997. 9(4): p. 334-338. 2.J.A. Switzer, C.-J. Hung, L.-Y. Huang, E.R. Switzer, D.R. Kammler, T.D. Golden and E.W. Bohannan, Electrochemical Self-Assembly of Copper/Cuprous Oxide Layered Nanostructures. Journal of the American Chemical Society, 1998. 120(14): p. 3530-3531. 3.E.W. Bohannan, L.-Y. Huang, F.S. Miller, M.G. Shumsky and J.A. Switzer, In Situ Electrochemical Quartz Crystal Microbalance Study of Potential Oscillations during the Electrodeposition of Cu/Cu2O Layered Nanostructures. Langmuir, 1999. 15(3): p. 813-818. 4.J. Eskhult, M. Herranen and L. Nyholm, On the origin of the spontaneous potential oscillations observed during galvanostatic deposition of layers of Cu and Cu2O in alkaline citrate solutions. Journal of Electroanalytical Chemistry, 2006. 594(1): p. 35-49. 5.S. Leopold, J.C. 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Bohannan, Negative Differential Resistance in Electrochemically Self-Assembled Layered Nanostructures. The Journal of Physical Chemistry B, 1999. 103(3): p. 395-398. 10.Y. Wang, Y. Cao, M. Wang, S. Zhong, M.-Z. Zhang, Y. Feng, R.-W. Peng, X.-P. Hao and N.-B. Ming, Spontaneous formation of periodic nanostructured film by electrodeposition: Experimental observations and modeling. Physical Review E, 2004. 69(2): p. 021607. 11.M.Z. Zhang, M. Wang, Z. Zhang, J.M. Zhu, R.W. Peng and N.B. Ming, Periodic structures of randomly distributed Cu/Cu2O nanograins and periodic variations of cell voltage in copper electrodeposition. Electrochimica Acta, 2004. 49(14): p. 2379-2383. 12.S. Zhong, Y. Wang, M. Wang, M.-Z. Zhang, X.-B. Yin, R.-W. Peng and N.-B. Ming, Formation of nanostructured copper filaments in electrochemical deposition. Physical Review E, 2003. 67(6): p. 061601. 13.N.T.M. Hai, J. Furrer, E. Barletta, N. Luedi and P. 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