臺灣博碩士論文加值系統

本研究以電泳沉積法將石墨烯量子點修飾於導電玻璃之表面，製備成光電極，並組裝成染料敏化太陽能電池。本研究主要改變提供電壓的時間，控制沉積於導電玻璃表面上之石墨烯量子點的多寡，並探討對於染料敏化太陽能電池之短路電流與光電轉換效率之影響。分析包含以掃描式電子顯微鏡及原子力顯微鏡解析表面形貌，使用太陽光模擬器測試電池模組之短路電流與光電轉換效率，以及利用EIS、IMPS、IMVS了解電子傳遞之特性。研究結果指出在沉積時間為120秒時，其光電轉換效率高達9.35% 並且為最佳之光電轉換效率，相較於未修飾之電池模組(8.34%)光電轉換效率提升了12.1%，其原因可由EIS、IMPS、IMVS得知加入石墨烯量子點可以有效壓制電子的再結合，增加電子壽命及電子傳遞速率，進而提升短路電，彰顯石墨烯量子點可有效提升電池模組的光電轉換效率。

In the dye-sensitized solar cells (DSSCs), the performance of DSSCs is extremely related to photoelectrodes. Interface of fluorinated-tin oxide (FTO)/TiO2, TiO2/TiO2, and TiO2/electrolyte in the DSSCs directly influence the power conversion efficiency (PCE). In this study, graphene quantum dots (GQDs) synthesized by pyrolyzing citric acid are introduced to modify the interface between FTO and TiO2 so as to suppress charge recombination. The surface morphology of GQDs-decorated FTO is demonstrate by SEM and AFM. In addition, electrochemical impedance spectra (EIS), itensity modulated photocurrent spectroscopy (IMPS) and intensity modulated photovoltage spectroscopy (IMVS) are applied to survey the charge recombination. The final PCE of DCCS is enhanced from 8.34% to 9.35%, accompanied by the increase of short-circuit photocurrent density, and overall improvement in PCE is 12.1%. The suppression of charge recombination and increase of charge transfer rate are both evidences of an improvement in PCE.

摘要 i
Abstract ii
總目錄 iii
圖目錄 v
表目錄 viii
第一章 緒論 1
1.1 前言 1
1.2 太陽能電池 2
1.3 染敏化太陽能電池 9
1.3.1 染料敏化太陽能電池之工作原理 13
1.3.2 染料敏化太陽能電池之主要組成 15
1.3.2.1 導電基材 16
1.3.2.2 光電極 18
1.3.2.3 光敏化染料 26
1.3.2.4 電解液 28
1.3.2.5 對電極 33
1.4 塗佈技術 35
1.5 石墨烯量子點 (Graphene quantum dots, GQDs) 36
第二章 實驗方法與步驟 39
2.1 實驗藥品 39
2.2 實驗儀器 40
2.3 儀器原理 41
2.3.1 場發射掃描電子顯微鏡 (FE-SEM) 42
2.3.2 原子力電子顯微鏡 (AFM) 43
2.3.3 光電轉換效率測試 (J-V curve) 44
2.3.4 交流阻抗法 (EIS) 45
2.3.5 強度調變光電流譜/強度調變光電壓譜 (IMPS/IMVS) 48
2.4 實驗步驟 51
2.4.1 FTO導電玻璃前處理 51
2.4.2 製備石墨烯量子點修飾FTO導電玻璃 52
2.4.2.1 合成石墨烯量子點 52
2.4.2.2 製備石墨烯量子點修飾FTO導電玻璃 52
2.4.3 二氧化鈦光電極的製備 53
2.4.4 鉑對電極製備 55
2.4.5 染料敏化太陽能電池組裝 56
第三章 結果與討論 59
3.1 網印法製作二氧化鈦光電極應用於染敏化太陽能電池 59
3.1.1 網印層數之光電轉換效率分析 59
3.1.2 光電極二氧化鈦膜厚度分析 61
3.2 電泳沉積法修飾石墨烯量子點於 FTO 導電玻璃表面之表面形貌分析 62
3.2.1 不同沉積時間之表面形貌分析 (SEM) 62
3.2.2 不同沉積時間之表面粗糙度分析 (AFM) 65
3.3 石墨烯量子點修飾 FTO 導電玻璃製備染料敏化太陽能電池 69
3.3.1 行為研究 69
3.3.2 光電轉換效率分析 ( J-V 曲線圖) 71
3.3.3 電化學分析 (交流阻抗法) 74
3.3.4 強度調變光電流譜/強度調變光電壓譜分析(IMPS/IMVS) 76
第四章 結論與未來展望 81
4.1 結論 81
4.1.1 網印法製作二氧化鈦光電極應用於染敏化太陽能電池 81
4.1.2 電泳沉積法修飾石墨烯量子點於 FTO 導電玻璃表面之表面形貌 81
4.1.3 石墨烯量子點修飾 FTO 導電玻璃製備染敏化太陽能電池 82
4.2 未來展望 82
第五章 參考文獻 83

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