本實驗是利用射頻磁控濺鍍法(RF magnetron sputter)在室溫下，以不同的Ar 與O2比例(1:1、1:3、3:1)和不同的製程真空壓力(2mtorr、10mtorr、50mtorr)，在玻璃基板上製作WO3(Tungsten Trioxide)薄膜，並對這兩種製程變數交叉組合的薄膜進行各種量測，來探討WO3的薄膜結構和特性。

由Alpha-Step量測數據得知在氧氣比例(Ar:O2 3:1)和較佳的製程工作壓力(2mtorr)中有較高的沉積速率，而在氧氣比例增加和製程真空壓力上升時，沉積速率則會下降。X光繞射分析儀的測量顯示，只有在(Ar:O2 3:1)和(2mtorr)的製程薄膜,有獨立的繞射峰，氧氣比例上升或製程真空壓力上升時都沒有觀察到獨立的繞射峰。
比對SEM和AFM的結果顯示，在(Ar:O2 3:1) (2mtorr)的真空製程薄膜的粗糙度較低，隨著氧氣比例上升或真空壓力增高，薄膜表面會而變得較為粗糙。
(Ar:O2 3:1)和(2mtorr) 真空製程的薄膜, 可見光平均穿透率只有79.3%，而在氧氣比例提高到1:1或1:3時平均穿透率達85%以上，在製程真空壓力達到50mtorr時穿透率更高達到87%以上。而光學能隙則是會隨製程真空壓力上升而跟著上升，而氧氣比的改變對光學能隙影響不大。
電性量測結果顯示，薄膜在2mtorr且 Ar:O2=3:1的結晶性較好，所以有較高的載子濃度和遷移率，在提高氧比例和製程工作壓力都會影響晶格排列，造成載子濃度和遷移率下降。在高氧氣比例和高真空壓力(10/50mtorr) 製造的薄膜,電阻率會上升。

This experiment is using RF magnetron sputtering method (RF magnetron sputter) to make WO3 (Tungsten Trioxide) films on a Corning glass substrate, with Ar, and O2 in different ratios (1:1, 1:3, 3:1) and various working pressure (2mtorr, 10mtorr, 50mtorr), to investigate the thin film structure and properties of WO3 .

Alpha-step measurement has shown that a higher deposition rate for films deposited at (Ar:O2 3:1) and (2mtorr) . In high oxygen ratio and low working pressure (10/50mtorr), the deposition rate will be declined. X-ray results show that the peak of the films only appear in low oxygen ratio (Ar:O2 3: 1) and high working pressure (2mtorr). There is no peak observed for the films deposited in other conditions.

The film deposited at (Ar:O2 3:1) and (2mtorr) also revealed a lower roughness with SEM and AFM observations. When Argon ratio and working pressure reduces, the roughness of the film becomes larger.

In optical analysis, we observed that films at (Ar:O2 3:1) and (2mtorr) have lower average of visible light transmittance (79.3%). When oxygen ratio increases to 1:1 or 1:3, the average transmittance is about 85%. When the working pressure reaches to above 50mtorr, the average transmittance can over 87%. The optical energy gap rises with the increase of working pressure, and the oxygen ratio does not affect too much on optical energy gap.

The films deposited at Ar:O2 3:1 and 2mtorr have better crystallinity,with a higher carrier concentration and mobility. When the oxygen ratio and working pressure increase, the thin films become a non-crystallinity, and carrier concentration and mobility reduce, with the raise of resistance.

摘要 i
Abstract ii
總目錄 iii
圖目錄 v
表目錄 vii
第一章緒論 1
1.1前言 1
1.2研究動機與目的 2
第二章 文獻回顧 3
2.1三氧化鎢之結構特性 3
2.1.1三氧化鎢薄膜感測器相關文獻回顧 6
2.1.2三氧化鎢電致色變相關文獻回顧 9
2.2電漿與濺鍍系統介紹 11
2.2.1電漿原理 11
2.2.2濺鍍系統介紹 13
2.2.3薄膜成長原理 15
第三章 實驗方法與步驟 17
3.1 WO3實驗方法 17
3.1.1實驗流程圖 17
3.1.2樣品準備與清潔 18
3.1.3濺鍍製程 19
3.2實驗儀器介紹 21
3.2.1 FE-SEM 場發射掃描式電子顯微鏡 21
3.2.2 X光繞射儀 22
3.3.3 UV-VIS光譜儀 24
3.3.4霍爾效應量測儀 26
3.3.5原子力顯微鏡 28
3.3.6薄膜厚度測量儀 30
3.3.7射頻磁控濺鍍系統 32
第四章 實驗結果與討論 33
4.1沉積率分析 33
4.2 XRD分析 35
4.3顯微結構分析(SEM) 37
4.4顯微結構分析(AFM) 42
4.5穿透率分析 48
4.6 光學能隙分析 51
4.7電性量測分析 53
第五章 結論 55
參考文獻 57

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