臺灣博碩士論文加值系統

Sn-Sb-S 液態敏化太陽能電池藉由SILAR法合成Sn-Sb-S量子點經由本實驗進行探討。最佳樣品條件為: SnS 8 cycles / SbS 6 cycles 並在氮氣下進行325 ℃ ，12 分鐘的退火流程，並且以多碘(I-/I3-)當作電解液，白金(Pt)當作對電極。
由XRD分析及TEM分析證明Sn-Sb-S確實生長在孔隙型(mp)-TiO2中，其顆粒大小約為 23 nm 。並經由UV-VIS 光譜儀分析，附加一層ZnSe passivation在最佳樣品條件下製作的成品，其能隙為 1.38 eV而其吸收範圍為300 – 850 nm。
在表現最佳的ZnSe passivation layer電池中，在一個太陽光源強度下所得到的轉換效率為 2.58 %，其短路電流 Jsc 為 14.04 mA/cm2，開路電壓 Voc為 0.46 V，FF (Fill factor)為39.91 % 。
當光源強度降低至0.05個太陽光時，所得到的轉換效率為4.89 %，短路電流為 1.36 mA/cm2 (歸一化後為27.2 mA/cm2)。
最後經由EQE量測得到，在波長為500 nm時轉換效率可達72%。

Tin antimony sulfide as a sensitizer for liquid junction sensitized solar cells has been investigated. Sn-Sb-S semiconductor quantum dots (QDs) were grown by using the successive ionic layer adsorption and reaction (SILAR) method. The best condition for the growth process is 8 cycles for Sn-S and 6 cycles for Sb-S annealing at 325 ℃ for 12 min in N2, using polyiodide (I-/I3-) as the electrolyte, and platinum (Pt) the as counter electrode. The X-Ray diffaction (XRD) patterns and transmission electron microscope (TEM) images confirmed that Sn-Sb-S was successfully grown into mesoporous (mp)-TiO2 with a particle size of ~23 nm. UV-Visible measurements showed that Sn-Sb-S grown using the best condition with ZnSe passivation layer has an energy gap of 1.38 eV which covers 300-850 nm of the optical wavelength.
The best cell with a ZnSe passivation layer yielded a short-circuit current density Jsc of 14.04 mA/cm2, an open-circuit voltage Voc of 0.46 V, a fill factor FF of 39.91%, and a power conversion efficiency η of 2.58% under 1 sun. At the reduced light intensity of 0.05 sun, the η increased 4.89% with Jsc = 1.36 mA/cm2 (which could be normalized to 27.2 mA/cm2 ). The external quantum efficiency (EQE) spectrum covered the spectral range of 300–850 nm with a maximal EQE = 72% at λ = 500 nm.

Acknowledgment i
Abstract (Chinese) iii
Abstract (English) iv
List of Tables viii
List of Figures x
Chapter 1 Introduction 1
1.1 Background and Motivation 1
1.2 Study Objective 4
Chapter 2 Theoretical Background 5
2.1. Quantum Dot Semiconductor-Sensitized Solar Cells (QD-SSC) 5
2.2 The Properties of Sn-Sb-S 7
2.3 Physical Properties of Titanium Dioxide (TiO2) 8
2.4 Prepare Titanium (IV) isopropoxide (TTIP) 10
2.5 Succesive Ionic Layer Adsorption and Reaction (SILAR) Method 10
2.6 Passivation materials for QDSSCs 12
2.7 Counter Electrode 13
2.8 Air Mass 14
Chapter 3 Experimental Details 15
3.1 Chemicals and Substrates for Sn-Sb-S Liquid Junction Semiconductor-Sensitized Solar Cells 15
3.2 Instrument 16
3.3 Experimental Steps 18
3.3.1 Preparation of Substrate 18
3.3.2 Preparation of Photoanode 19
3.3.2.1 Preparation of Blocking Layer 19
3.3.2.2 Preparation of mp-TiO2 Sensitizer and Scattering Layer 20
3.3.2.3 Synthesis of Sn-Sb-S into mp-TiO2 Photoelectrode 21
3.3.3 Passivation Sn-Sb-S QDSSCs 24
3.3.3.1 Coating ZnS Passivation Layer 24
3.3.3.2 Coating ZnSe Passivation Layer 24
3.3.4 Preparation of Counter Electrode 24
3.3.5 Assembling of Sn-Sb-S QD-SSCs 26
3.3.6 Preparation of Electrolyte 26
3.3.7 Preparation of Structural and optical characteristics sample of Sn-Sb-S QDs 26
3.3.7.1 Preparation of Measurement Sample 27
3.3.7.2 Preparation of XRD Sample 27
3.3.7.3 Preparation of TEM Sample 27
3.3.7.4 Preparation of EDS Sample 27
3.4. Optical and Photovoltaic Measurement 28
3.4.1 Absorption Spectra Measurement 28
3.4.2 Photovoltaic Measurement and Calculation 28
3.4.3 External Quantum Efficiency Measurement 32
Chapter 4 Result and Discussion 33
4.1 Structural Characteristics of Sn-Sb-S QDs Coated into mp-TiO2 33
4.2 Energy Dispersive X-Ray Spectroscopy (EDS) Analysis 36
4.3 Electro Impedance Spectra (EIS) Analysis 36
4.4 Optical Characteristic of Sn-Sb-S QDs Coated Into mp-TiO2 38
4.5 Morphological Characteristic of Sn-Sb-S QDs Coated Into mp-TiO2 39
4.6 Photovoltaic Measurement of Sn-Sb-S QDs Coated Into TiO2 Photoelectrode 40
4.6.1 Optimal Dipping Time 40
4.6.2 Optimal SILAR Cycles Number 41
4.6.3 Optimal Annealing Temperature and Time 43
4.6.4 Comparing without, ZnS and ZnSe Passivation 45
4.6.5 Comparing of Electrolyte 47
4.7 Measurement on Power Dependence of the Sn-Sb-S QDs Coated into TiO2 Photoelectrode. 49
4.8 External Quantum Effeciency of Sn-Sb-S QDs Coated into TiO2 photoelectrode. 50
Chapter 5 Conclusion 51
5.1 Conclusion 51
5.2 Futher works and suggestion 51
References 52

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