臺灣博碩士論文加值系統

本論文是利用屬FCC金屬材料的銀薄膜來探討，分別使用濺鍍機(Sputter)及電子束蒸鍍機(E–gun)兩種沉積方法，沉積厚度為0.5μm及1.5μm的銀薄膜試片，透過將兩種沉積方式的試片放置在260°C的烘烤箱中進行退火作用，並觀察組織結構轉換的差異，藉此探討薄膜膜質純度對於組織結構轉換的影響，以及不同沉積方法是否影響薄膜組織轉換臨界厚度，由實驗中觀察到當薄膜厚度達到臨界厚度時，經退火作用後其組織結構會從(111)轉換到(100)，另外利用觀察不同厚度銀薄膜退火前後組織結構轉換及表面微結構的變化，藉以了解厚度對於薄膜組織結構轉換強度及表面微結構變化的影響，本研究量測部分主要是利用高解析X-ray繞射儀(XRD)觀察銀薄膜的優選晶向及(111)、(100)組織結構的強度比例，最後以FIB觀察退火前後之薄膜表面微結構變化。

This thesis study the texture transformation of FCC silver thin films. Silver thin films with thicknesses of 0.5 and 1.5 μm were deposited using sputter and E-gun respectively. Two samples were annealed at 260°C and the texture transformations were observed to exam the films properties and critical thickness. When the thickness of film is thicker than the critical thickness the film texture transform from (111) to (100) after annealing. Changes of texture transformations and microstructures of thin films with different thickness before and after annealing were observed to understand the effect of thickness on the transformation intensity and surface microstructure. In this experiment, the preferred orientation of thin films and the ratio of the (111) and (100) texture of thin films were observed by using XRD. At last, microstructure changes of thin films before and after annealing were observed by using FIB.

目錄
摘要 i
目錄 iii
表目錄 v
圖目錄 vi
第一章 緒論 1
1.1 研究背景 1
1.2 組織結構探討 2
1.3 研究動機及目的 3
1.4 論文架構 4
第二章 文獻探討 5
2.1 薄膜組織結構的形成 5
2.2 退火誘導銀薄膜組織結構轉換 6
2.3 薄膜濺鍍原理 8
2.3.1 直流濺鍍法(DC Sputter) 9
2.3.2 電子束蒸鍍法(Electron Beam Evaporation) 10
2.4 組織結構轉換研究 11
2.4.1 銀薄膜與基板間界面能探討 11
2.4.2 黏結層對銀薄膜組織結構探討 12
2.4.3 退火機制對銀薄膜微結構探討 13
第三章 試件製程與實驗方法 15
3.1 前言 15
3.2 試件製程 15
3.3 實驗方法 17
3.3.1 試片退火 17
3.3.2　X-ray量測 18
3.3.3 聚焦式離子束顯微鏡觀察 21
第四章 實驗結果與討論 23
4.1 沉積方法對組織結構之影響 23
4.2 沉積厚度對組織結構之影響 28
4.3 退火機制與組織結構轉換強度之關係 30
4.4 退火機制對微結構組織之影響 32
第五章 結論與未來展望 37
5.1 結論 37
5.2 未來展望 38
參考文獻 39
表目錄
表3.1 濺鍍機沉積銀薄膜之參數 16
表3.2 蒸鍍機沉積銀薄膜之參數 17
表4.1 0.5μm銀薄膜(111)晶向繞射強度比例轉換差異比較表 26
表4.2 1.5μm銀薄膜(111)晶向繞射強度比例轉換差異比較表 28
圖目錄
圖1.1 米勒指數 2
圖1.2 非均向性材料[9] 3
圖1.3 (a){111}原子結構圖(b){100}原子結構圖(c){110}原子結構圖 3
圖2.1 薄膜組織結構圖[22] 6
圖2.2 ZⅠ~ZⅢ結構截面圖[23] 6
圖2.3 FCC材料之薄膜厚度與溫度關係圖[11] 8
圖2.4 薄膜濺鍍示意圖 10
圖2.5 薄膜成長過程示意圖[21] 10
圖2.6 各種薄膜厚度之組織結構強度[16] 11
圖2.7 薄膜厚度0.6μm及2.4μm之EBSD[16] 12
圖2.8 薄膜有無黏結層Ti之強度分佈比較圖[13] 13
圖2.9 雙晶結構薄膜之差排密度與雙晶間距圖[7] 14
圖2.10 雙晶結構薄膜之厚度與體積分數比較圖[14] 14
圖3.1 試件製程照片(a)試片尺寸(b)清洗試片(c)乾燥試片(d)濺鍍試片 16
圖3.2 試片製程圖 17
圖3.3 熱風烘箱圖 18
圖3.4 高解析X-ray繞射儀 19
圖3.5 X-ray量測示意圖[30] 19
圖3.6 布拉格方程式之幾何圖[31] 20
圖3.7 銀之標準卡 20
圖3.8 複晶低掠角X-ray繞射示意圖[31] 21
圖3.9 多功能聚焦離子束顯微鏡 22
圖3.10 多功能聚焦離子束系統示意圖[32] 22
圖4.1 薄膜厚度與(111)組織結構強度關係圖[13] 23
圖4.2 0.5μm銀薄膜退火前之XRD圖 25
圖4.3 0.5μm銀薄膜退火後之XRD圖 25
圖4.4不同沉積方式之0.5μm薄膜退火前後(111)組織結構強度圖 26
圖4.5 1.5μm銀薄膜退火前之XRD圖 27
圖4.6 1.5μm銀薄膜退火後之XRD圖 27
圖4.7不同沉積方式之1.5μm薄膜退火前後(111)組織結構強度圖 28
圖4.8 Sputter沉積之0.5μm及1.5μm薄膜退火前後(111)組織結構強度圖 29
圖4.9 E-gun沉積之0.5μm及1.5μm薄膜退火前後(111)組織結構強度圖 30
圖4.10 0.5μm薄膜之退火時間與(100)組織結構強度關係圖 31
圖4.11 1.5μm薄膜之退火時間與(100)組織結構強度關係圖 31
圖4.12 0.5μm薄膜退火前後(111)組織雙晶結構強度圖 32
圖4.13 1.5μm薄膜退火前後(111)組織雙晶結構強度圖 33
圖4.14 不同沉積方式之退火前後(111)組織晶粒尺寸變化圖 34
圖4.15 不同沉積方式之退火前後(100)組織晶粒尺寸變化圖 34
圖4.16 Sputter(0.5μm)薄膜FIB圖(a)退火前(b)退火後 35
圖4.17 Sputter(1.5μm)薄膜FIB圖(a)退火前(b)退火後 35
圖4.18 E-gun(0.5μm)薄膜FIB圖(a)退火前(b)退火後 36
圖4.19 E-gun(1.5μm)薄膜FIB圖(a)退火前(b)退火後 36

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