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研究生:石巧郁
研究生(外文):Chiao-Yu Shih
論文名稱:退火作用下介面層對銀薄膜組織結構轉換之探討
論文名稱(外文):Texture Transformation of Ag Thin Films With Different Substrates
指導教授:林明澤林明澤引用關係
口試委員:黃德劭徐烱勳
口試日期:2017-07-25
學位類別:碩士
校院名稱:國立中興大學
系所名稱:精密工程學系所
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2017
畢業學年度:105
語文別:中文
論文頁數:46
中文關鍵詞:物理沉積濺鍍退火組織結構轉換介面能
外文關鍵詞:PVDSputterAnnealTexture TransformationInterfacial Energy
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本論文選擇屬FCC金屬材料的銀薄膜來探討,利用物理沉積(濺鍍)方法,在Si(100)、Si(111)、Si3N4與氧化鋁作為介面層之四種試片上沉積厚度為0.5μm及1.5μm的銀薄膜試片,透過將試片放置在260°C的烘烤箱中進行退火作用後,觀察到當薄膜厚度達到臨界厚度時,其組織結構會從(111)轉換到(100),藉此探討薄膜厚度與介面能對於組織結構轉換的影響,本研究量測部分主要是利用高解析X-ray繞射儀(XRD)觀察銀薄膜的優選晶向及(111)、(100)組織結構的強度比例觀察退火前後之薄膜微結構變化。
This thesis study the texture transformation of FCC silver thin films. Silver thin films with thicknesses of 0.5 and 1.5 μm were deposited on the surface of Si(100)、Si(111)、Si3N4 and Al2O3. Four silver samples were annealed at 260°C and observed their texture transformation. In theis experiments, the preferred orientation of thin films and the ratio of the (111) and (100) texture of thin films were measured by using XRD.
Texture transformations of thin films with different thickness and substrates after annealing were studied to understand the effect of thickness and interfacial energy on transformation.
誌 謝 i
中文摘要 ii
英文摘要 iii
目 錄 iv
圖索引 vi
表索引 viii
第一章 緒論 1
1.1研究背景與動機 1
1.2組織結構探討 3
1.2.1晶體結構 3
1.2.2晶體結構之比較 5
1.3介面能與應變能 6
1.3.1表面能與介面能 6
1.3.2表面能與自由能最大之差異 6
1.3.3應變能 7
1.4成核與成長 7
1.4.1成核 7
1.4.2成長 8
1.5氧化鋁特性 9
1.6氮化矽特性 10
第二章 文獻回顧 12
2.1成膜過程 12
2.2薄膜組織結構的形成 13
2.3薄膜組織結構轉換之原因 15
2.4濺鍍薄膜原理 18
2.5退火 21
2.5.1退火目的 21
2.5.2退火三步驟 21
2.6組織結構轉換研究 22
2.6.1銀薄膜沉積之優選方向 22
2.6.2不規則(abnormal)成長 24
2.6.3黏結/介質層對銀薄膜組織結構探討 25
第三章 試件製程與實驗方法 28
3.1前言 28
3.2試件製成 28
3.3實驗方法 30
3.3.1試片退火 30
3.3.2 X-RAY量測 31
第四章 結果與討論 36
4.1沉積鍍率對組織結構之影響 36
4.2沉積厚度與介面層對組織結構之影響 38
第五章 結論與未來展望 41
5.1結論 41
5.2未來展望 42
參考文獻 43
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