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研究生:謝孟勳
研究生(外文):Hsieh, Meng-Syun
論文名稱:晶圓大尺度下的分子級電子元件製造
論文名稱(外文):Wafer-scale fabrication of molecular devices
指導教授:蘇彥勳蘇彥勳引用關係
指導教授(外文):Su, Yen-Hsun
口試委員:謝馬利歐謝雅萍
口試委員(外文):Mario HofmannYa-Ping Hsieh
口試日期:2017-07-04
學位類別:碩士
校院名稱:國立成功大學
系所名稱:材料科學及工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2017
畢業學年度:105
語文別:英文
論文頁數:57
中文關鍵詞:晶圓大尺寸製造分子電晶體自組裝分子石墨烯
外文關鍵詞:wafer-scale fabricationmolecular transistorsself assembled moleculegraphene
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  • 點閱點閱:22
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石墨烯的機械和電性質可被用於分子元件的製造以及元件最小尺寸的縮減。數百個分子元件被自組裝的自動探針平台分析電性。該自動探針平台由經濟實惠的硬體和容易取得的軟體所構成,並且其運行是基於力量回饋系統。並且,自動化測量可提供省時、提高元件壽命、以及大量元件分析等優點。這些優點被後續的石墨烯電晶體的電性分析映證。

在利用自動偵探針平台分析分子元件後,發現分子元件的電性足以滿足數位電子的電性需求。我們的分子元件以電洞的載子導電,並且其開關電流比例高達103、導電機制為Schottky-Richardon。然而分子元件的良率並不理想(數百個元件中,四個成功),因為在元件內的分子層有缺陷。這些被Cyclic Voltammetry 證實的缺陷包含孔洞、分子域邊界、階梯、槽,並會造成元件的漏電、低良率。
Mechanical and electrical property of graphene is exploited to fabricate molecular devices as well as to scale down device minimum feature size. Hundreds of molecular devices has been characterized by a self-build automatic prober. The setup of automatic prober includes inexpensive hardware and easily accessible software, enabling automatic electrical measurement by force-feedback. Furthermore, the automatic operation, instead of hand-on manipulation, has benefited us from merits, including saving time, improving lifetime of devices and mass data analysis, which is validated by electrical measurement of graphene transistor.

Electrical property of molecular devices is found to reach the requirement of digital electronic after applying automatic prober to electrical measurement. Our devices which conduct through hole carriers demonstrate on/off ratio over 103 and Schottky-Richardson conduction mechanism. However, devices yield, 4 out of hundreds, suffers because of the defects in molecule layers. These defects— including pinholes, domain boundaries, steps and grooves—which were confirmed by cyclic voltammetry contribute to device leakage that leads to poor yield rate.
1 Abstract 2
2 摘要 3
3 List of figure 7
4 Introduction 11
4.1 Moore’s law and its dilemma: cost and scaling of transistor 11
4.2 Bottom up electronic: nanowire and molecule assembly 13
4.3 Graphene—numerous top contact 17
4.4 Graphene—tunable barrier 18
4.5 Ideas and approaches 20
5 Method 22
5.1 Fabrication overview 22
5.2 Photolithography 24
5.3 Oblique evaporation 25
5.4 Molecular self assembly via immersion 27
6 Result 27
6.1 Automatic prober 27
6.1.1 Automatic measurement setup 27
6.1.2 Alignment before automatic prober operation 30
6.1.3 Operation—force feedback 30
6.1.4 Determination of contact point 32
6.1.5 Mass measurement of graphene back gate transistor 35
6.2 Molecular device 37
6.2.1 SAM vertical FET performance and carrier transport mechanism 37
6.3 Molecular device troubleshoot 40
6.3.1 Leakage of device substrate 41
6.3.2 Over etching of device pillars 41
6.3.3 Defects in SAM 43
7 Conclusion 51
8 Outlook 52
9 Reference 53
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