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研究生:蕭允毓
研究生(外文):Yun-YuHsiao
論文名稱:以溶液法製備鋰摻雜氧化鎳應用於鈣鈦礦發光二極體並以甲胺氣體改善薄膜品質
論文名稱(外文):Fabrication of Solution-Processed Lithium-Doped Nickel Oxide in Perovskite Light Emitting Diodes with Improving the thin film quality by MA treatment Method
指導教授:高騏高騏引用關係
指導教授(外文):Chiu Gao
學位類別:碩士
校院名稱:國立成功大學
系所名稱:航空太空工程學系
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2017
畢業學年度:105
語文別:中文
論文頁數:67
中文關鍵詞:鈣鈦礦發光二極體溶液法鋰摻雜氧化鎳甲胺氣體修飾
外文關鍵詞:Lithium doped NiOxperovskite light emitting diodesMA treatment
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本研究利用溶液法製備鋰摻雜氧化鎳作為電洞傳輸層,並利用固氣相反應甲胺氣體修飾法對鈣鈦礦薄膜進行改善,使整體發光二極體元件發光亮度與效率皆有效的提升。
本研究之元件結構為ITO/Metal-doped nickel oxided/Perovskite/TPBi/LiF/-Al。近年來,無機的金屬氧化物材料被廣泛應用於電洞傳輸層,其中較早期即被使用的p型材料為氧化鎳,由於氧化鎳有諸多優點,如穩定較佳、金屬導電性較佳等,但由於其電阻值相對較高,因此也有許多文獻嘗試利用摻雜不同金屬進氧化鎳,期望可以降低其電阻、改善能隙帶等效果。本研究透過簡單的溶液法製程,將鋰金屬摻雜入氧化鎳中,可以提升氧化鎳之導電性,並使鈣鈦礦層表面結晶性變佳、晶格變小,使載子傳遞更為快速;但摻雜後之薄膜會變得比較粗糙、晶界不明顯等問題,而使鈣鈦礦薄膜產生孔洞、晶界模糊等問題,此時再利用甲胺氣體對薄膜表面進行修飾,消除孔洞並使晶界鈍化消失等,將可使鋰摻雜氧化鎳電洞層的優點浮現,不致因為鈣鈦礦薄膜的表面缺陷而出現效率不佳的問題。使用鋰摻雜氧化鎳製備之元件,發光亮度可以從18377cd/m2提升至73325cd/m2,發光效率可以從3.4cd/A提升至12.4cd/A。
The issue of this research is to improved the performance of perovskite light-emitting didoes (PeLED) based on Lithium-doped nickel oxide. The cell’s performance have a brightness over 78000cd/m2 and the luminous efficiency(LE) over 12cd/A, which have four times improved from the original sample. Firstly, the Lithium was chose as the doped metal, because it can decrease the resistance of the NiOx, and have more better LUMO to confine the charge carriers in the CH3NH3PbBr3 layer, so in this work we doped the Lithium into NiOx by solution processes. But the film quality of perovskite film shows the traps and holes, and the passivation of grain boundary, all of these might hinder the brightness and the efficiency of PeLED.
To dissolved the problem ,we use the methylamine(MA) treatment to enhance the perovskite film quality, which significantly improves the crystallinity and the photoluminescence of the perovskite film. It also can modify the holes and traps caused by the Lithium doped NiOx. A Lithium-doped NiOx perovskite LED with the figuration of ITO/Lithium-doped nickel oxide/MA treated CH3NH3PbBr3 /TPBi/LiF /Al, display a max brightness of 73325cd/m2 at 7.5V and luminous efficiency of 12.3cd/A at 7.5V.
中文摘要 I
致謝 X
目錄 XI
圖目錄 XIV
表目錄 XVII
第一章、緒論 1
1-1 前言 1
1-2 有機電激發光元件發展 2
1-3 研究動機與大綱 7
1-3-1 研究動機 7
1-3-2 論文大綱 8
第二章、鈣鈦礦發光二極體發展 9
2-1 前言 9
2-2 有機電激發光元件的結構與操作原理 11
2-3 鈣鈦礦發光二極體重要的文獻回顧 14
2-4 摻雜金屬氧化鎳相關的重要的文獻回顧 19
2-5 鈣鈦礦薄膜成膜性重要的文獻回顧 22
2-6 本章結論 26
第三章、元件製作與實驗步驟 27
3-1 前言 27
3-2 鈣鈦礦發光二極體的製備過程 28
3-2-1 ITO基板圖案化及清潔 28
3-2-2 ITO基板清洗 30
3-2-3 電洞傳輸層製作 30
3-2-4 主動層製作 32
3-2-5 主動層修飾方法 32
3-2-6 電子傳輸層製作 33
3-2-7 電洞阻擋層製作 34
3-2-8 陰極製作 34
3-3元件光電特性量測 35
3-3-1 電流-亮度-電壓量測系統 35
3-3-2 掃描式電子顯微鏡(SEM) 35
3-3-3 光致發光光譜儀(PL) 36
3-3-4 X-射線繞射儀(XRD) 37
3-3-5 X-射線光電子光譜/化學分析電子光譜(XPS/ESCA) 38
3-3-5 四點探針(Four-Point Probe) 38
3-4本章結論 39
第四章、改善電洞傳輸層對鈣鈦礦發光二極體之研究 40
4-1 前言 40
4-2 鋰摻雜氧化鎳之電洞傳輸層對鈣鈦礦薄膜及發光二極體之影響 41
4-2-1 鋰摻雜氧化鎳電洞傳輸層之化學元素分析 42
4-2-2 鋰摻雜氧化鎳電洞傳輸層之導電性量測分析 44
4-2-3 鋰摻雜氧化鎳電洞傳輸層之接觸角分析 45
4-2-4 鋰摻雜氧化鎳電洞傳輸層對於鈣鈦礦發光層之表面形貌分析 46
4-2-5 鋰摻雜氧化鎳電洞傳輸層之能階分析 48
4-2-6 鋰摻雜氧化鎳電洞傳輸層之元件電性量測分析 50
4-3-1 甲胺氣體修飾方式下對鋰摻雜之氧化鎳於鈣鈦礦薄膜之形貌分析 54
4-3-2 甲胺氣體修飾方式下鋰摻雜氧化鎳電洞傳輸層對鈣鈦礦薄膜之結晶程度分析 55
4-3-3 甲胺氣體修飾鋰摻雜氧化鎳電洞傳輸層之光致發光分析 57
4-3-4 甲胺氣體修飾鋰摻雜氧化鎳電洞傳輸層對鈣鈦礦發光二極體之電性量測 58
4-4 本章結論 61
第五章、總結與未來工作 62
5-1 總結 62
5-2 未來工作展望 63
參考文獻 64
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