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[1] P. Causin, M. Restelli, and R. Sacco, “A simulation system based on mixed-hybrid finite elements for thermal oxidation in semiconductor technology,” Computer Methods in Applied Mechanics and Engineering., vol. 193, no. 33, pp. 3687-3710, Aug. 2004. [2] M. B. Patil, “New discretization scheme for two-dimensional semiconductor device simulation on triangular grid,” IEEE Trans, Computer-Aided Design of Integrated Circuits and Systems, vol. 17, no. 11, pp. 1160-1165, Nov. 1998. [3] D. J. Riley and C. D. Turner , “Interfacing unstructured tetrahedron grids to structured-grid FDTD,” IEEE Trans, Microwave and Guided Wave Letters, vol. 5, no. 9, pp. 284 - 286, Sep 1995. [4] G. W. Tang, “Generation of Tetrahedral/Prismatic Meshes and Its Applications in Microchannel Flows,” D. S. Thesis, Institute of AA, National Cheng Kung University, Taiwan, Republic of China, 2006. [5] H. J. Jhih, “Simulation and Analysis in Three-Dimension Cylindrical MOSFETs,”M. S. Thesis, Institute of EE, Nation Central University, Taiwan, Republic of China, 2015. [6] D. A. Neamen, Semiconductor physics and devices, 3rd ed. McGraw-Hill Companies Inc., New York, 2003. [7] R. E. Bank, D. J. Rose, and W. Fichtner, “Numerical methods for semiconductor device,” IEEE Trans, Electron Devices, vol. 30, no. 9, Sep. 1983. [8] S. B. Park, C. S. Kim and S. U. Lee, “Error Resilient 3-D Mesh Compression,” IEEE Trans, Multimedia, vol. 8, no. 5, pp. 885 - 895, Oct. 2006. [9] H. J. Kai, “Finding the internal vector from the plane equation in obtuse triangle element for 2D Semiconductor device simulation,”M. S. Thesis, Institute of EE, Nation Central University, Taiwan, Republic of China, 2016. [10] M. J. Zeng, “Development of Triangular element and its applications to arbitrary 2D Semiconductor device,” M. S. Thesis, Institute of EE, Nation Central University, Taiwan, Republic of China, 2014. [11] W. T. Shen, “Finding internal vector from the edge vector in obtuse triangle element for 2D Semiconductor Device Simulation,”M. S. Thesis, Institute of EE, Nation Central University, Taiwan, Republic of China, 2016. [12] J. S. Zhao, F. L. Chu and Z. J. Feng, “Kinematics of Spatial Parallel Manipulators With Tetrahedron Coordinates,” IEEE Trans, Robotics, vol. 30, no. 1, pp. 233-243, Feb. 2014. [13] A. Yoshii, H. Kitazawa, M. Tomizawa and S. Horiguchi and T. Sudo, “A three-dimensional analysis of semiconductor devices,” IEEE Trans, Electron Devices, vol. 29, no. 2, pp. 184 189, Feb 1982. [14] J. Burgler , P. Conti , G. Heiser , S. Paschedag , W. Fichtner ,“Three-dimensional simulation of complex semiconductor device structures,” IEEE Trans, International Symposium on VLSI Technology, Systems and Applications, pp. 106 - 110, May 1989. [15] C. C. Chang, C. H. Huang, J. F. Dai, S. J. Li, and Y. T. Tsai, “3-D Numerical Device Simulation Including Equivalent-Circuit Model”, IEDMS, 2002. [16] C. C. Chang, “Improvement of 2-D and 3-D Semiconductor Device Simulation Using Equivalent-circuit Model”, Ph.D. Dissertation, Institute of EE, National Central University, Taiwan, Republic of China, Jun. 2006. [17] K. Tanaka, A. Notsu, and H. Matsumoto, “A new approach to mesh generation for complex 3D semiconductor devices structures,” IEEE Trans, Simulation of Semiconductor Process and Devices, Sep. 1996. [18] Y. C. Lin, “Breakdown simulation of a spherical PN junction in cylindrical coordinates”, M. S. Thesis, Institute of EE, Nation Central University, Taiwan, Republic of China, 2012. [19] M. S. Li, “Rectangular Transform of Trapezoidal Mesh and Its Application to Cylindrical MOSFETs”, M. S. Thesis, Institute of EE, Nation Central University, Taiwan, Republic of China, 2011. [20] L. C. Han, “Development of 3D Trapezoidal Model and its Application to Semiconductor Device Simulation,”M. S. Thesis, Institute of EE, Nation Central University, Taiwan, Republic of China, 2015.
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