臺灣博碩士論文加值系統

現今各種類電子產品對於品質上的要求更趨嚴謹,從早期的良率要求迄今的百萬分之一(PPM)的計量單位去看待品質上的標準.
而本文中針對非揮發性記憶 (Non-Volatile Memory)元件–快閃記憶體(Flash Memory)在這近年來越趨被重視，單位元件不僅是體積小, 當中的讀取速度快，資料的保存上更是穩健，所以被應用在各種的3C電子商品, 舉凡行動電話、冰箱、電視、生活智慧家電用品、筆電、相機…等。為了有效提升生產效率、增加其毛利率，微縮的製程演化也就越來越快了, 故衍生產生更多品質上的缺陷疑慮問題。
本論文著重在於傳統的測試流程中無法順利宰除的隱藏性缺陷的產品，藉由建立對應真因做出有效的測試圖樣,加入在出問題的貨批中,達到品質上的絕對提升。
本文即是以 Nor Flash的傳統製程中,在量產上遭逢的Metal short和Oxide damage問題,舉出實際的兩個實際案例做出說明,並達到測試上的有效宰除與品質提升。

Today's various types of electronic products are more stringent in terms of quality requirements, from the early yield requirements of the millions of dollars (PPM) units of measurement to look at the quality standards.
In this paper, nonvolatile memory (Nonvolatile Memory) components - flash memory (Flash Memory) in recent years, more and more attention, unit components is not only small, which read speed, data preservation Is more robust, so it is used in a variety of 3C electronic products, such as mobile phones, refrigerators, television, life wisdom appliances, laptop, camera ... and so on. In order to effectively improve production efficiency, increase its gross margin, miniature process evolution is faster and faster, so the derivative of more defects on the quality of the problem.
This paper focuses on the traditional test process can not be successfully slaughtered hidden defective products, by establishing a corresponding truth to make effective test patterns, to join the problem in the batch, to achieve the absolute quality of the upgrade.
This article is the traditional process of Nor Flash, in mass production on the Metal short and Oxide damage problems, cited the actual two practical cases to illustrate, and to achieve effective testing on the slaughter and quality improvement.

目 錄
摘要 i
Abstract ii
致謝 iii
目錄 iv
圖目錄 v
表目錄 vi


第一章 緒論.…………………………………………………………………………………… 1
1.1 研究動機……………………………………………………………………………………..1
1.2 研究目的……………………………………………………………………………………..2
1.3 論文架構……………………………………………………………………………………..3
第二章:Nor Flash的特色與標準測試流程………………………………………………4
2.1 Nor Flash的特色…………………………………………………………………………4
2.2 Nor Flash量產標準測試流程………………………………………………………..5
第三章:缺陷的發生來源與實例簡述……….…………………………………………..…..8
3.1缺陷發生的可能來源……………………………………………………………………...8
3.2本文探討的實例簡述……………………………………………………………………9
第四章:兩個品質缺陷的實務案例.…………………………………………………….…10
4.1 Sample 1 - Metal Short…………………………………………………………….10
4.2 Sample 2 – Oxide Damage ……………………………………………………...16
第五章 成果與結論………………………………………………………………………….24
參考文獻………………………………………………………………………………………..25

參考文獻

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[3] 許慕賢,” 快閃記憶體之錯誤診斷和縮短測試時間的方法”碩士論文,國立清華大學,2004.
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[5] 賴昇志,”次世代非揮發性記憶體技術之研究-電荷捕捉型NAND型快閃記憶體及低溫鐵電記憶體製程之研究,博士論文,國立清華大學,2007.
[6].董育中,”使用取樣分類法的快閃記憶體測試”碩士論文,國立清華大學,2005.