臺灣博碩士論文加值系統

本論文主要進行鑽石半導體元件之文獻整理。鑽石擁有寬能隙、極 高的崩潰電場、載子遷移率和優良的熱性質，是作為功率和頻率元件 最理想的半導體材料。鑽石功率和頻率半導體元件主要以肖特基二極 體、肖特基 p-n 二極體、肖特基 p-i-n 二極體、硼摻雜通道型場效電晶 體、氫端鍵結表面通道型場效電晶體，以及 P 溝道型接面場效電晶體 為主。鑽石肖特基二極體、硼摻雜通道型場效電晶體和 P 溝道型接面 場效電晶體操作溫度可達 500°C。氫端鍵結表面通道型電晶體具有良好 的截止頻率與最大震盪頻率。然而鑽石半導體元件的發展一直受到各 種瓶頸，其中最主要的問題在於鑽石晶圓尺寸過小、晶體品質不佳以 及摻雜製程不易。目前只有 P 型鑽石半導體元件可以在室溫下運作， 尤其是以氫端鍵結表面通道型電晶體為大宗。

This thesis present a survey of diamond semiconductor devices. Diamond is considered to be the ultimate semiconductor for power and frequency devices due to its wide band-gap, high breakdown electric field, high carrier mobility, and superior thermal properties. Diamond power and frequency devices mainly focus on schottky diode, schottky p-n diode, schottky p-i-n diode, boron-doped channel FET, hydrogen-terminated surface channel FET and P channel JFET. Furthermore, the operating temperature of schottky diamond diode, boron-doped channel diamond FET and P channel diamond JFET can reach 500 °C , and hydrogen-terminated surface channel FET has excellent cutoff frequency and maximum oscillation frequency. However, the success of diamond-based semiconductor devices has been difficult due to critical challenges involved with small wafer size, poor quality of crystal and difficult on doping. So far, only P-type diamond semiconductor devices can be used in room temperature, especially hydrogen-terminated surface channel FETs.

目錄
摘要 i
Abstract ii
誌謝 iii
目錄 iv
圖目錄 vii
表目錄 xi
第一章、緒論 1
第二章、文獻蒐集方法 6
第三章、結果 9
3.1 鑽石 9
3.1.1 晶體結構及性質 9
3.1.2 散熱機制 10
3.1.3 種類 10
3.1.4 單晶與多晶 11
3.2 合成鑽石技術 12
3.2.1 高溫高壓法 12
3.2.2 化學氣相沉積法 13
3.2.3 拼花成長方法 17
3.3 摻雜 18
3.4 反應離子蝕刻 20
3.5 鑽石二極體 21
3.5.1 鑽石肖特基二極體 22
3.5.2 鑽石肖特基p-n二極體 23
3.5.3 鑽石肖特基p-i-n二極體 24
3.6 鑽石場效電晶體 25
3.6.1 硼摻雜通道型MESFET 26
3.6.2 硼摻雜通道型MISFET 27
3.6.3 氫端鍵結表面通道型MESFET 29
3.6.4 氫端鍵結表面通道型MISFET 30
3.6.5 接面場效電晶體 31
3.6.6 單晶鑽石與多晶鑽石場效電晶體之比較 33
3.7 功率和頻率半導體元件之性能評估 34
第四章、討論 64
4.1 薄膜製程分析 64
4.2 摻雜製程分析 65
4.3 蝕刻製程分析 65
4.4 二極體分析 66
4.5 電晶體分析 67
第五章、總結 69
參考文獻 71

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