臺灣博碩士論文加值系統

3D IC 矽穿孔封裝(Through Silicon Via, TSV)技術是被看好為下一世代的封裝主流，有別於傳統的平面封裝方式，3D IC 是將導線經由TSV直接穿過晶片與下層接點導通，原本在平面封裝必須要走的路徑，以立體堆疊的封裝方式，便可以從厚度方向較短的路徑做傳輸，以提升晶片效能並降低晶片功耗。本研究利用TSV結構的特點，Bosch蝕刻反應物種類以及清洗過程的化學藥液在TSV孔內的流體特性進行分析，調配最佳化清洗藥液，利用兆聲波技術進行TSV清洗方法，並闡述兆聲波清洗之特點。探討不同頻率的兆聲波振幅對於TSV清洗的影響，並分析TSV摩擦係數以及振幅對於清洗之影響。建立機電整合於兆聲波在全自動的濕式兆聲波清潔機台並與本研究實作結果對照分析，有了以上之基礎、規劃兆聲波清洗工法製作3D IC。另外TSV微結構分析我們將使用架構簡單、成本低的紅外線光譜式反射儀與表面污染監控系統，針對小孔徑、高密度的TSV 陣列做深度檢測研究，不受制於國外。本研究執行其兆聲波清洗能高效去除深孔內刻蝕殘餘產物，在航空業中使用3D IC設備中將有極大應用前景，而清洗設備就更為重要。

3D IC through Silicon via (TSV) technology is regarded as the next generation of mainstream packaging. It’s different than traditional flat packaging. The 3D IC turns the wire through the TSV directly through the wafer and the lower contact. Originally, it must go through the path in order to reach three-dimensional stacked package in the plane. Now, it can be transmitted from a shorter path in the thickness of that direction to improve wafer efficiency and reduce wafer power. This research helped Grand Plastic Technology Corp Company fix and adjust. It’s cleaning machines. We are using the characteristics of the TSV structure. In the cleaning process different types of Bosch etch reactants and the chemical properties from the chemical process are analyzed in the TSV pore. Then we will prepare the best cleaning solution. TSV cleaning method uses mega sonic technology and features the characteristics of the mega sonic cleansing. The research explores the effects of mega sonic amplitudes at different frequencies on TSV cleaning. And then analyze the effect of TSV friction coefficient and amplitude of cleaning. The results of the establishment of the mechanical and electrical integration in automatic wet mega sonic cleaning machine have been analyzed.

摘要 IV
ABSTRACT V
誌謝 VI
圖目錄 IX
表目錄 XI
第一章 緒論 1
1-1 前言 1
1-2 研究動機與目的 3
1-3 研究方法 5
1-4 論文架構 5
第二章 基礎原理與文獻回顧 6
2-1 RCA 6
2-2 超音波原理 8
2-3 兆聲波原理 11
2-4 空蝕現象 12
2-5 慣性空蝕效應 15
第三章 實驗架構 22
3-1 實驗流程 23
3-2 實驗裝置 24
3.2.1晶圓蝕刻 24
3.2.2晶圓研磨 26
3.2.3電鍍金屬鎳 27
3.2.4晶圓濕式清洗 27
3.2.5超音波清洗 28
3.2.7 SEM 掃描電子顯微鏡 33
第四章 結果及討論 34
4-1 實驗條件 34
4-2 實驗結果 35
4.2.1硬遮罩鎳清潔(Ni hard mask clean) 35
4.2.2 蝕刻SiC深孔清潔(Via etch Byproduct removal) 38
4.2.3分析結果 42
第五章 結論 45
第六章 未來展望 46
參考文獻 47

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