臺灣博碩士論文加值系統

MOCVD為發光二極體、高頻元件、功率元件等重要電子元件的主要製程設備，其設備機台可以劃分為五大項目、加熱系統、控制系統、進氣系統、廢氣處理系統、真空反應腔體，其中加熱系統提供製程反應中所需要的製程溫度與能量，其溫度均勻度影響薄膜品質甚劇，而溫度均勻度主要來自於發熱源形狀以及間距的設計，有鑑於此，本研究以自身搭建一MOCVD之高溫加熱系統進行研究，且為使承載盤表面溫度分布均勻，加入第二段加熱源，藉由多功率調變提升加熱系統之設計彈性，特以數值軟體針對以下參數進行分析
(1)內環加熱器形狀參數探討
(2)外環加熱器形狀參數探討
(3)二區段加熱器優化分析
(4)二區段加熱器之承載盤表面溫度驗證分析
(5)反射擋板與二區段加熱器
比對數值分析與實驗結果，可進行加熱器電熱功率與二區段加熱器線圈形狀設計，並對承載盤表面溫度分布進行優化，大幅度改盤面溫度分布，承載盤表面溫度誤差百分比僅1%以內且晶圓區之溫度均勻性可達6.73℃。而反射擋板與二區段加熱器之組合可提升加熱器電熱功率使用效率，並且增加承載盤使用率。

A semiconductor equipment usually can be divided into five sub-systems, (a) heating system, (b) exhausting system, (c) infecting system, (d)control system and (e) vacuum chamber. To deposit epitaxy thin film using metal organic chemical vapor deposition (MOCVD), the uniformity is a key process indicator and is determined by the distribution of susceptor temperature. Therefore, the research focuses on the heating system for a MOCVD vacuum reactor. The geometry of the heater determines the uniformity of the surface temperature. By setting design parameters in a vacuum reactor, the results assist us to receive the distribution of surface temperature. The two-zone heating system increases the flexibility of heater design and makes the temperature distribution of susceptor more uniform with the multi-power modulation. The inner-heater design, outer-heater design, and, optimization of heater, experiment verification and reflector set-up are investigated in the research.
To compare with the experiments, the results agree well for the geometry design and power inputs of two-zone heater. The optimum of the two-zone heater improves the temperature uniformity of susceptor significantly. The temperature difference within wafer can achieve 6.73℃ and the error of the susceptor temperature is within 1%. The reflector can increase the efficiency of the two heater and the utilization of the susceptor. The research makes the susceptor temperature to be more uniform, and improves the design capability of semiconductor components.

中文摘要 i
ABSTRACT ii
誌謝 iii
目錄 iv
圖目錄 vii
表目錄 xiii
符號說明 xiv
第一章 緒論 1
1-1 研究背景及動機 1
1-2 文獻回顧 3
1-3 研究內容及目的 6
第二章 薄膜沉積理論與磊晶系統 7
2-1薄膜沉積理論 7
2-1-1物理氣相沉積 8
2-1-2化學氣相沉積 11
2-1-3有機金屬化學氣相沉積 12
2-2 MOCVD磊晶系統 14
2-2-1反應腔體 14
2-2-2加熱系統 18
第三章 理論介紹 22
3-1 研究應用理論 22
3-1-1 歐姆定律 22
3-1-2焦耳定律 24
3-1-3 熱傳現象 25
3-1-4 熱傳統御方程式 30
3-2 有限元素法 31
第四章 研究方法 34
4-1 數值分析SOP 34
4-2 數值分析流程 45
4-3 數學模型與相關條件 46
4-3-1 紅外線輻射加熱模型 46
4-3-2 材料性質 48
4-3-3 統御方程式 52
4-3-4 初始及邊界條件 53
4-3-5溫度實驗量測點位暨數值分析 54
4-4 軟體收斂性 57
4-5高溫真空反應腔體驗證平台 62
第五章 結果討論 63
5-1 實驗內容 63
5-2 紅外線輻射加熱器模擬分析與實驗驗證 65
5-3 2D紅外線輻射二段加熱器優化數值分析 68
5-3-1 2D二段加熱器初步架構 68
5-3-2 2D二段加熱器優化 71
5-4 3D紅外線輻射二段加熱器優化模擬分析與驗證 81
5-4-1 3D二段加熱器初步架構 81
5-4-2 3D二段加熱器優化 85
5-4-3二段加熱器實作驗證 93
5-5 反射擋板與二段加熱器之探討 98
第六章 結論 104
參考文獻 105

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