臺灣博碩士論文加值系統

本篇論文使用氣相傳輸法成長氧化銦(In2O3)奈米線，在氧化石墨烯(rGO)表面鍍金，以氣-液-固(VLS)成長機制成長出氧化銦奈米線，以及不使用任何觸媒，直接在氧化石墨烯表面以氣-固(VS)成長機制成長出氧化銦奈米線，並且對此兩種不同成長機制合成的氧化銦奈米線/還原氧化石墨烯異質結構進行鑑定與分析，藉由X光繞射儀(XRD)與穿透式電子顯微鏡(TEM)鑑定結果得知成長出的氧化銦奈米線皆為體心立方晶(FCC)結構，VLS成長機制的奈米線成長方向為(100)，VS成長機制的奈米線有[001]與[111]兩種成長方向，而氧化石墨烯在成長過程中會被還原為還原氧化石墨烯(rGO)。從場發射掃描式電子顯微鏡(FE-SEM)觀察到在鍍金的樣品中可成長出茂密的氧化銦奈米線，而在未鍍金的樣品較為稀疏之外，還發現氧化銦會選擇在單層氧化石墨烯表面成長，在多層的氧化石墨烯則會形成二維氧化銦薄膜。利用紫外光/可見光吸收光譜儀發現氧化銦奈米線/還原氧化石墨烯異質結構的可見光吸收有些許的增強，主要為還原氧化石墨烯的貢獻，從X光光譜能譜發現氧化石墨烯在還原後，C sp2與C sp3兩個峰明顯的分離，以及在含氧官能基中，有較高熱穩定性的C-OH相對強度較高，從光致發光譜儀(PL)發現氧化石墨烯由退火轉變為還原氧化石墨烯，放光能力明顯增強，而氧化銦奈米線/還原氧化石墨烯異質結構與純氧化銦奈米線相比強度較弱，為消光效應(quenching effect)的影響，在光觸媒實驗中得知純氧化銦與純還原氧化石墨烯幾乎沒有光觸媒活性，而氧化銦奈米線/還原氧化石墨烯異質結構使從價帶躍遷至導帶的電子經由異質介面移動至另一材料上，降低了電子-電洞對複合的機率，使較多的自由電子與水產生超氧根離子與氫氧自由基將亞甲基藍降解，大幅提升了降解效率。

A vapor transport process was used to grow indium oxide nanowires on gold catalyzed graphene oxide surfaces by vapor-liquid-solid (VLS) mechanism and graphene oxide surfaces by vapor-solid (VS) mechanism, respectively. The samples were characterized by various characterization techniques and their growth mechanism were discussed. Both X-ray diffraction (XRD) and transmission electron microscopy (TEM) results show that the as-grown indium oxide nanowires are face centered cubic FCC with [100] growth direction. The graphene oxide was reduced to reduced graphene oxide during growth. The FE-SEM images show a high density of nanowires on graphene oxide surface grown by VLS mechanism. Moreover, the In2O3 nanowires were found to preferential grown on thin layers of graphene oxide. The two dimensional growth of In2O3 films were observed on thick layers of graphene oxide. The samples show a higher visible light absorption possible due to the reduced graphene oxide of heterostructures confirmed by UV/Vis absorption spectra. Compared to graphene oxide, the reduced graphene oxide shows a higher luminescence property. On the contrary, the In2O3/rGO heterostures shows weaker luminescence properties due to quenching effect. For visible light photocatalytic applications, the In2O3/rGO heterostructures show a higher visible-light-driven photocatalytic activity owing to the increased photo-induced charge separation efficiency, further increase the formation of superoxide radicals and hydroxyl radicals.

摘要 I
Abstract II
目錄 III
圖目錄 VI
表目錄 IX
第一章 緒論 1
1.1前言與動機 1
第二章 文獻回顧 2
2.1 氧化石墨烯的結構與特性 2
2.2氧化銦的結構與特性 2
2.3 氧化銦/(還原)氧化石墨烯奈米結構的特性 3
2.4 VLS成長與VS成長 4
第三章 實驗配置 10
3.1 實驗藥品和製程設備 10
3.1.1 實驗基板 10
3.1.2 清洗溶劑 10
3.1.3 實驗藥品與器材 10
3.1.4 製程設備: 11
3.2 實驗步驟 11
3.2.1 基板處裡 11
3.2.2 氧化石墨烯製備 11
3.2.3 合成氧化銦奈米線/氧化石墨烯異質結構 11
3.3 實驗參數 12
1.二氧化矽厚度: 12
2.氧化石墨烯在基板上的表面濃度: 12
3.VLS成長: 12
4.VS成長: 12
3.4 分析儀器 13
3.4.1 場發射掃描式電子顯微鏡(FE-SEM) 13
3.4.2 原子力顯微鏡(AFM) 13
3.4.3 X光繞射分析儀(XRD) 13
3.4.4 拉曼光譜儀(Raman) 14
3.4.5 電子能譜儀(XPS) 14
3.4.6 穿透式電子顯微鏡(TEM) 15
3.4.7 紫外光/可見光吸收光譜儀(UV/Visible spectroscopy) 15
3.4.8 光致激發光譜儀(PL) 16
3.4.9 光觸媒活性測試 17
第四章 實驗結果與討論 21
4.1 氧化石墨烯濃度與二氧化矽厚度對旋轉塗佈的影響 21
4.1.1 氧化石墨烯旋轉塗佈在基板的表面分布 21
4.1.2 氧化石墨烯溶液滴落塗佈至不同基板上的表面形貌 22
4.1.3 薄膜厚度量測 22
4.1.4 小結 22
4.2 VLS成長 23
4.2.1 氧化銦奈米線/還原氧化石墨烯異質結構表面形貌 23
4.2.2 X光繞射晶體結構分析 24
4.2.3 拉曼光譜分析 25
4.2.4 X光光電子能譜表面元素分析 26
4.3 VS成長 27
4.3.1 討論不同成長機制的形貌 27
4.3.2 氧化銦奈米線的成核位置 28
4.4 TEM微結構鑑定 29
4.5 光學特性分析 29
4.5.1 紫外/可見光吸收光譜分析 29
4.5.2 光致螢光光譜分析 30
4.6 可見光光觸媒活性測試 30
第五章 結論 52
參考文獻 53

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