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研究生(外文):Hong-Wei Huang
論文名稱:PTB7 加入倒置結構太陽能電池之研究
論文名稱(外文):The investigation of PTB7 in inverted polymer solar cells
指導教授(外文):Mei-Hsin Chen
外文關鍵詞:inverted structureZnO(nano)PTB7:PCBMrotating speed
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最後第三部分,則是以討論主動層變化為主,以表面形貌、J-V圖、暗電流、外部量子效率(EQE),去探討主動層的優劣,之後發現PTB7:PCBM最好。最後希望找出PTB7:PCBM的最佳條件,再以轉速變化控制變因去找到PTB7:PCBM於4000rpm 60秒時有最佳效率7.59%且填充因子66,優於其它的轉速條件。
In this study, we focus on the inverted organic solar cells. The structure of the inverted device is based on ITO//ZnO nanoparticle or Al-doped ZnO (AZO) or Sn-doped ZnO (SZO)/ PTB7:PCBM or P3HT:PCBM or P3HT:ICBA/MoO3/Ag. The content is divided into three parts. First, according to the measurements of surface, J-V curve, thin films transmission, haze to find out ZnO nanoparticle the most stable state, and the best state of ZnO (nano) is clear condition.
  Second part is the comparisons of surface morphology, devices characteristics, thin films transmission, active layer absorption, dark current and lifetime. It can be found that ZnO (nano) has a high roughness and a low transmittance, but its efficiency is still higher than the other two. We thought that because of its excellent electronic conductivity is the result of this.
  Finally, the third part is to discuss the different of active layers to surface morphology, J-V diagram, dark current, external quantum efficiency (EQE), to explore the advantage of the active layer, and then found that PTB7: PCBM is the best active layer. At last, we hope to find the best condition of PTB7: PCBM, and then change rotating speed to find PTB7: PCBM at 4000rpm 60 seconds with the best efficiency of 7.59% and fill factor 66, better than others rotating speed conditions.
Abstract I
摘要 III
圖目錄 VII
表目錄 IX
第一章 序論 1
1.1 前言 1
1.2 太陽能電池 6
1.3 研究動機 15
1.4 文獻探討 17
第二章 理論基礎與文獻回顧 21
2.1 太陽能電池基本原理與參數 21
2.2 有機太陽能電池回顧 26
2.2.1 單層結構 26
2.2.2 雙層結構 27
2.2.3 混合異質接面結構 28
2.2.4 倒置有機太陽能電池 30
第三章 實驗流程與材料介紹 31
3.1 材料介紹 31
3.1.1 ITO導電玻璃 31
3.1.2 AZO/SZO/ZnO nanoparticles電子傳輸層 31
3.1.4 MoO3電洞傳輸層 35
3.1.5 溶劑介紹 35
3.2倒置有機太陽能電池製作流程 36
3.2.1 ITO玻璃基板備置、清潔 36
3.2.2 AZO/SZO/ZnO(nano)電子傳輸層塗佈 36
3.2.3 PTB7:PCBM及P3HT:ICBA及PTB7:PCBM主動層塗佈 37
3.2.4 前退火處理 37
3.2.5 MoO3電洞傳輸層與Ag陰極蒸鍍 37
第四章 設備介紹 39
4.1 電子天平 39
4.2 超音波震洗機 39
4.3 烘箱熱風循環/程控熱風循環烘箱 40
4.4 紫外光臭氧清洗機(UV-Ozone) 40
4.5 加熱攪拌器 41
4.6 旋轉塗佈機 41
4.7 手套箱 42
4.8 熱蒸鍍機 43
4.9 I-V曲線量測系統 45
4.10 EQE量測系統 46
4.11 光譜儀量測系統 47
4.12 AFM原子力顯微鏡 48
第五章 結果與討論 51
5.1 電子傳輸層ZnO(nano)分析與特性 51
5.1.1 ZnO(nano)配置完後放置時間之狀態與穿透霧度分析 52
5.1.2 ZnO(nano)狀態之元件效率比較 55
5.2 電子傳輸層ZnO(nano)與SZO與AZO特性及效率比較分析 57
5.2.1 ZnO(nano)與其它電子傳輸層穿透率比較 58
5.2.2 ZnO(nano)與其它電子傳輸層薄膜形貌分析 60
5.2.3 主動層在ZnO(nano)與其它電子傳輸層的吸收分析 61
5.2.4 ZnO(nano)與其它電子傳輸層的元件效率分析 62
5.2.5 ZnO(nano)與其它電子傳輸層的暗電流及生命週期分析 64
5.3 PTB7:PCBM元件製程及分析 66
5.3.1 PTB7:PCBM 表面薄膜及截面分析 67
5.3.3 PTB7:PCBM轉速比較 72
第六章 結論與未來研究方向 75
6.1 結論 75
6.2 未來研究方向 76
論文修改清單 77
參考文獻 79
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