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[1] Bailga B J., Analysis of junction-barrier-controlled Schottky (JBS) rectifier characteristics, Solid-state Electronics, volume 28, Issue 11, Novemeber 1985, Pages 1089-1093. [2] Bailga B J., Analysis of high voltage merged PiN/Schottky (MPS) rectifier, IEEE Elec. Dev. Lett, volume 8, Issue 4, 1987, Pages 407-409 [3] Bailga B J., The trench MOS barrier Schottky (TMBS) rectifier , Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International, Pages 676-678 [4] S. Kuiiori, The low power dissipation Schottky barrier diode with trench structure, Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on, Pages 66-71 [5] R.N. Guptat, W.G. Mint, T.P. Chow, H.R. Chang and C. Winterhaltert, A planarized high-voltage silicon trench sidewall oxide-merged PIN/Schottky (TSOX-MPS) rectifier, Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings of the 4th International Symposium on, Pages 117-120 [6] H.P. Yee, P.O. Lauritzen and S.S. Yee, Channel diode, a new fast switching power diode, Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on, Pages 72-79 [7] Vladimir Rodov, Alexei L. Ankoudinov, and Taufik, Super Barrier Rectifier- A new Generation of power Diode, IEEE Trans. On Industry Applications, vol. 44, no. 1, pp.234-237,2008. [8] Jong Il Won, Kun Sik Park, Doo Hyung Cho, Jin Gun Koo, Sang Gi Kim, and Jin Ho Lee,Diode and MOSFET Properties of Trench-Gate-Type Super-Barrier Rectifier with P-Body Implantation Condition for Power System Application , ETRI Journal Vol. 38, No. 2, Apr. 2016, pp. 244-251.
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