跳到主要內容

臺灣博碩士論文加值系統

(44.220.255.141) 您好!臺灣時間:2024/11/03 04:29
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

: 
twitterline
研究生:劉信宏
研究生(外文):LIU, XIN-HONG
論文名稱:金屬氧化物半導體控制二極體元件之簡化製程以改進元件之特性及製造成本
論文名稱(外文):Simplified Process for MOS-Controlled Diode (MCD) to Improve Device Characteristics and Manufacturing Costs
指導教授:鄭岫盈葉昇平
指導教授(外文):CHENG, SHIOU-YINGYEH, SHENG-PIN
口試委員:劉傳璽林奎至邱顯欽鄭岫盈葉昇平
口試委員(外文):LIU,CHUAN-HSILIN, KUEI-CHIHCHIU, HSIEN-CHINCHENG, SHIOU-YINGYEH, SHENG-PIN
口試日期:2017-07-28
學位類別:碩士
校院名稱:國立宜蘭大學
系所名稱:電機資訊學院碩士在職專班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2017
畢業學年度:105
語文別:中文
論文頁數:18
中文關鍵詞:功率二極體金屬氧化物半導體控制二極體(MCD元件)蕭特基二極體PN二極體減化光罩
外文關鍵詞:power diodePlanar MOS controlled diode (MCD)Schottky diodePN diodemask reduction
相關次數:
  • 被引用被引用:0
  • 點閱點閱:775
  • 評分評分:
  • 下載下載:71
  • 收藏至我的研究室書目清單書目收藏:0
隨著半導體製程技術的演進迅速發展以及功率半導體市場包括汽車電子領域,新能源領域和攜帶式電子產品設備快速地膨脹。電力電子工業一直呈現快速增長,而在傳統整流二極體的兩大家族中,PN二極體和蕭特基二極體各有各的優點及缺點。平面式金屬氧化物半導體控制二極體(Planar MOS control Diode, MCD元件) 試圖彌合這兩種傳統功率整流元件的優勢,使得這兩種元件的獨特優勢能夠綜合到一個功率二極體元件裡,這就是MCD元件最初研發的目的。
但是我們注意到MCD元件雖然特性優越,但是其製程流程較複雜,易造成研發費用支出及研發時程不斷的增加,於是造成獲利被壓縮。因此,低成本、有效率的製程開發流程就變得非常重要。所以在本論文研究中藉由改變MCD元件的製作流程,可以減化光罩數量,降低製作成本,同時滿足客戶期望降低價格及提高效能的需求。
Due to the rapid development of semiconductor process technology and expansion of the power semiconductor market, including automotive electronics, new energy and portable electronic products, the power electronics industry has been showing rapid growth recently. PN diodes and Schottky diodes, two of traditional families of rectifier diodes, have their own advantages and disadvantages. However, Planar MOS Controlled Diode (MCD) attempts to bridge the advantages of these two conventional power rectifier components, making the unique advantages of these two components integrated into a power diode element, which is the original research and development purposes.
Although the characteristics of MCD components is superior, its process is more complex and easy to cause R&D expenses and time increases, resulting in profit being compressed. Therefore, developing a low-cost and efficient process becomes very important. In the study of this paper, we can reduce the number of mask and production costs, while meeting the customer's desire to lower prices and improve performance by changing the MCD manufacturing process.
摘要 I
Abstract II
目錄 III
圖目錄 IV
表目錄 V
第一章 緒論 1
1-1 前言 1
1-2 研究動機 1
1-3 論文架構 1
第二章 MCD元件基礎與理論 2
2-1 功率二極體的介紹與發展歷史 2
2-2 MCD元件的介紹 4
2.2.1 MCD元件的結構 4
2.2.2 MCD元件的操作原理 5
第三章 金屬氧化物半導體控制二極體的元件設計與製程研究 7
3-1 45V MCD元件的製程介紹 7
3-2 45V MCD元件的電性分析 10
第四章 MCD元件減光罩製程之探討 12
4-1 標準5道光罩製程10A/45V MCD元件電性結果 12
4-2 MCD元件減光罩製程之開發 13
4-3 減光罩製程MCD元件的電性分析 15
第五章 結論 17
參考文獻 18
[1] Bailga B J., Analysis of junction-barrier-controlled Schottky (JBS) rectifier characteristics, Solid-state Electronics, volume 28, Issue 11, Novemeber 1985, Pages 1089-1093.
[2] Bailga B J., Analysis of high voltage merged PiN/Schottky (MPS) rectifier, IEEE Elec. Dev. Lett, volume 8, Issue 4, 1987, Pages 407-409
[3] Bailga B J., The trench MOS barrier Schottky (TMBS) rectifier , Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International, Pages 676-678
[4] S. Kuiiori, The low power dissipation Schottky barrier diode with trench structure, Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on, Pages 66-71
[5] R.N. Guptat, W.G. Mint, T.P. Chow, H.R. Chang and C. Winterhaltert, A planarized high-voltage silicon trench sidewall oxide-merged PIN/Schottky (TSOX-MPS) rectifier, Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings of the 4th International Symposium on, Pages 117-120
[6] H.P. Yee, P.O. Lauritzen and S.S. Yee, Channel diode, a new fast switching power diode, Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on, Pages 72-79
[7] Vladimir Rodov, Alexei L. Ankoudinov, and Taufik, Super Barrier Rectifier- A new Generation of power Diode, IEEE Trans. On Industry Applications, vol. 44, no. 1, pp.234-237,2008.
[8] Jong Il Won, Kun Sik Park, Doo Hyung Cho, Jin Gun Koo, Sang Gi Kim, and Jin Ho Lee,Diode and MOSFET Properties of Trench-Gate-Type Super-Barrier Rectifier with P-Body Implantation Condition for Power System Application , ETRI Journal Vol. 38, No. 2, Apr. 2016, pp. 244-251.
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top