臺灣博碩士論文加值系統

本論文分析多重摻雜之有機發光二極體元件之載子傳輸特性，目的為優化雙主體磷光元件，內容分為兩個部分：第一部分基於工研院提供之原始元件進行分析，得知不同客體摻雜條件下具有不同的電荷傳輸特性。藉由製作多功能層的等效單載子傳輸元件，分別評估電洞與電子於整體元件中傳遞的情形，由分析可得能隙小的DY001(黃磷光客體)能增強載子捕獲效應，並增進元件等效電洞傳輸特性；此外，HT001(電洞傳輸層)可做為強力的電子阻擋層，能將電子有效限制在發光層當中。
第二部分則利用以上的結果來優化元件特性，藉由改變發光層中的雙主體比例，以達到操作時電子與電洞載流密度的匹配，並增厚發光層加寬元件複合區，優化後之黃光元件最大外部量子效率達14%，效率滾降亦有大幅的改善。

This thesis analyzed the carrier transport properties of multiple doped organic light-emitting diodes (OLEDs) to optimize the efficiency of the devices. The first part is based on the analysis of an original co-hosted device structure provided by ITRI. The study showed the devices with different doping materials exhibited different carrier transport mechanisms. Single carrier (hole or electron) transporting devices were fabricated to estimate the carrier transporting capability. The carrier-trapping effect and the hole transporting capability of the OLEDs can be enhanced by doping DY001 (yellow phosphorescent guest material provided by ITRI). HT001 (the hole transporting material provided by ITRI) can be used as efficient electron blocking layers to confine electrons in the emission layers.
The second part is to optimize the device structure by modifying both the ratio of the two hosts in the emission layer and the thickness of the emission layer. The optimized device shows a maximum external quantum efficiency up to 14% and a reduced efficiency roll-off due to balanced electron and hole mobilities in the device and an adequate thickness of the emission layer.

摘要 i
Abstract ii
目錄 iii
圖目錄 vi
表目錄 ix
第一章、序論
1.1 前言 1
1.2 OLED發展 2
1.3 研究動機與目的 5
1.4 各章提要 6
第二章、基礎理論
2.1有機發光二極體結構與發展 7
2.2有機發光二極體原理 9
2.2.1 OLED電激發光原理 9
2.2.2螢光與磷光發光原理 11
2.2.3 磷光發光系統 13
2.3 電荷注入機制 15
2.3.1 Richardson-schottky熱激發載子理論 15
2.3.2 Fowler-Nordheim載子穿隧 16
2.3.3 Langevin-Recombination 17
2.4 有機元件電荷傳遞原理 19
2.4.1材料本質電荷傳遞 19
2.4.2元件電流之限制 20
第三章、元件製作與實驗設備
3.1元件製作流程 22
3.2元件製程 23
3.2.1基板前處理 23
3.2.2蒸鍍製程 23
3.2.3 元件量測 25
3.2.4 單載子元件分析 26
3.3材料簡介 27
3.4材料本質傳輸特性分析 28
3.5元件參考結構 31
第四章、結果與討論
4.1發光元件 32
4.2電洞傳輸元件 38
4.2.1 MoO3作為電洞注入層及電子阻擋層 38
4.2.2 HI001作為電洞注入層及MoO3作為電子阻擋層 40
4.2.3 HI001作為電洞注入層及電子阻擋層 41
4.2.4 SCLC傳輸特性分析 47
4.3 電子傳輸元件 50
4.4元件優化 54
第五章、結論
參考資料 58

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