在本論文中，使用四種芘菲衍生物PPyP、PTP、TPyP、TTP作為主體材料，並搭配BCzVBi、TSTA、DPASP以及DMASP等藍色客體材料製作一系列的OLED元件，透過傳輸層與元件結構厚度的調整，製作出高電激發光效率及壽命長的深藍光螢光元件。
以BCzVBi摻雜於PPyP、PTP、TPP中的薄膜固態量子效率均大於90 %，TPyP亦達89 %，說明主客體材料間能有效的能量轉移，以PTP摻雜5%客體材料作為發光層搭配最佳化元件結構，最大外部量子效率均為10 %以上，尤以摻雜5 % DPASP作為發光層之元件1T，最大外部量子效率高達11.4 %，最大發光效率與發光功率效率分別為17.5 cd/A與12.8 lm/W，最大亮度表現為91058 cd/m2，CIE色度座標為(0.14, 0.19)，從暫態電激發光實驗發現以PTP作為發光層材料的元件，可以透過三重態激發子間的碰撞進行三重態-三重態淬熄，將三重激態上轉換至單重激態，然後能量轉移至客體材料上放出生命期較長的延遲螢光，然而並非提高元件外部量子效率的主要因素。從水平極化光譜中發現以四種主體摻雜5 % BCzVBi的薄膜其分子排列水平，使放光方向近乎垂直基板，因而提高元件出光率，使元件外部量子效率可以超過理論值5 %。
以5 % DMASP摻雜於PPyP中作為發光層，5 % MoO3摻雜於HAT-CN作為p類型電洞注入層，Bebq2: Liq以3:7比例共蒸鍍作為n類型的電子傳輸層增加了元件的穩定性，得到較長的壽命表現，在500 cd/m2為起始亮度的壽命可達13515小時．CIE色度坐標為(0.15, 0.21)，最大外部量子效率為6.7 %、最大發光效率19.6 cd/A、最大發光功率效率11.7 lm/W；使用TSTA的元件，在500 cd/m2為起始亮度的壽命亦有12576小時，元件的CIE色度坐標(0.14, 0.18)，最大外部量子效率為7.8 %、最大發光效率15.0 cd/A、最大發光功率效率12.1 lm/W。

In the thesis, we used PPyP, PTP, TPyP, TTP as host materials doped with BCzVBi, TSTA, DPASP, and DMASP repectively, for the blue fluorescent emitters. With the suitable transporting materials and device layers, we have developed the deep-blue OLEDs with highly electrolu-minescence efficiency and long operation lifetime.
Because the quantum yields of PPyP, PTP and TTP film doped with BCzVBi are above 90 % and TPyP film is also almost 90 %, energy transfer between host and dopant is efficient. Extraordinary external quantum efficiency (E.Q.E.) above 10 % is achieved in the device hosted by PTP, especially the DPASP-doped device 1T, showing the maximum E.Q.E. of 11.4 %, the current efficiency of 17.5 cd/A and the power efficie-ncy of 12.8 lm/W, the maximum luminescence of 91058 cd/m2, with the CIE coordinates of (0.14, 0.19). From the transient EL spectrum, we found that PTP-based devices showed the microsecond-scale delayed fluor-escence. Two triplet excitons formed a singlet exciton via triplet-triplet annihilation among excited PTP molecules, and singlet excitons were transfer to dopant for efficient delayed fluorescent. However, this is not the crucial reason why the E.Q.E. of device 1I、1P-1R exceeded the limited efficiency of fluorescent OLEDs. From the angle dependent p-polaried PL spectrum, the measurement reveals the transition dipole moments of the host materials doped with 5 % BCzVBi emitter is almost horizontal with a horiaontal factor

摘 要-I
Abstract-III
圖目錄-VI
表目錄-XIII
第一章 緒論-2
第一節 有機電激發光發展演進-2
第二節 有機發光材料的放光機制-6
第三節 OLED發光原理與效率-8
第四節 主體、客體材料能量傳遞-13
第五節OLED元件壽命-18
參考文獻-23
第二章 高效率深藍色螢光元件製作-26
前言與研究動機-26
第一節 發光層主體材料性質介紹-38
第二節 高效率藍色螢光元件製作及延遲螢光之研究-44
第三節 量子效率提升之原因探討-68
結論-93
參考文獻-95
第三章 壽命元件製作-100
前言與研究動機-100
第一節 長壽命深藍色元件-103
第二節 其他應用-131
結論-136
參考文獻-137
附錄 儀器量測與元件製作-139

[1]C. W. Tang, S. A. Van Slyke, Appl. Phys. Lett., 1987, 51, 913
[2]J. H. Burroughes, D. D. C. Bradley, A. R. Brown, R. N. Marks, K. Mackay, R. H. Friend, P. L. Burns, A. B. Holmes, Nature. 1990, 347, 539.
[3]審譯：林敬二, 林宗義,儀器分析第四版, 1994, 上冊, 174.
[4]C. Adachi, M. A. Baldo, M. E. Thompson, S. R. Forrest, J. Appl. Phys., 2001, 90, 5048.
[5]C. Adachi, R. C. Kwong, P. Djurovich, V. Adamovich, M. A. Baldo, M. E. Thompson, S. R. Forrest, Appl. Phys. Lett. ,2001, 79, 2082.
[6]M. A. Baldo, D. F. O’Brien, Y. You, A. Shoustikov, S. Sibley, M. E. Thompson, S.R. Forrest, Nature, 1998, 395, 151.
[7]a) V. Bulovic, V. B. Khalfin, G. Gu, P. E. Burrows, Phys. Rev. B, 1998, 58, 3730.; b) M.-H. Lu, J. C. Sturm, J. Appl. Phys., 2002, 91, 595.
[8]G. Gu, D. Z. Garbuzov, P. E. Burrows, S. Venkatesh, S. R. Forrest, M. E. Thompson, Opt. Lett., 1997, 22, 396.
[9]C. W. Tang, S. A. Vanslyke, C. H. Chen, J. Appl. Phys., 1989, 65, 3610.
[10]T. Förster, Disc. Faraday Soc., 1959, 27, 7.
[11]D. L. Dexter, J. Chem. Phys. 1953, 21, 836.
[12]M. A. O. Baldo, D. F. Brien, M. E. Thomspon, S. R. Forrest, Phys. Rev. B. 1999, 60, 20.
[13]Q. Peng, E. T. Kang, K. G. Neoh, D. Xiao, D. Zou, J. Mater. Chem.,2006, 16, 376
[14]D. Y. Kondakov, J. R. Sandifer, C. W. Tang, R. H. Young, J. Appl. Phys. 2003, 93, 1108
[15]S. W. Culligan, A. C. A. Chen, J. U. Wallace, K. P. Klubek, C. W. Tang, S. H. Chen, Adv. Funct. Mater. 2006, 16, 1481.

[1]Y. J. Tung, T. Nago, M. Hack, J. Brown, N. Koide, Y. Nagara, Y. Kato, H. Ito, SID 2004 Technical Digest 2004, 35, 48.
[2]Y. Kijima, N. Asai, S. I. Tamura, Jpn. J. Appl. Phys. 1999, 38, 5274.
[3]M. T. Lee, C. H. Liao, C. H. Tsai, C. H. Chen, Adv. Mater. 2005, 17, 2497.
[4]V. Sivasubramaniam, F. Brodkorb, S. Hanning, H. P. Loebl, V. van Elsbergen, H. Boerner, U. Scherf, M. Kreyenschmidt, J. Fluor. Chem. 2009, 130, 640.
[5]J. Shi, C. W. Tang, Appl. Phys. Lett., 2002, 80, 3201.
[6]H. Xin, F. Y. Li, M. Shi, Z. Q. Bian, C. H. Huang, J. Am. Chem. Soc. 2003, 125, 7166.
[7]Q. X. Tong, S. L. Lai, M. Y. Chan, Y. C. Zhou, H. L. Kwong, C. S. Lee, S. T. Lee, Chem. Phys. Lett. 2008, 455, 71.
[8]H. Tsuji, K. Sato, Y. Sato, E. Nakamura, Chem. Asian J. 2010, 5, 1294.
[9]B.W. D’Andrade, S.R. Forrest, A.B. Chwang, Appl. Phys. Lett. 2003, 83, 3858.
[10]M. Meng, W. Song, Y.-H. Kim, S.-Y. Lee, C.-G. Jhun, F. R. Zhu, D. H. Ryu, W.-Y. Kim, J. Nanosci. Nanotechnol. 2013, 13, 294.
[11]C. Hosokawa, H. Higashi, H. Nakamura, T. Kusumoto, Appl. Phys. Lett., 1995, 67, 3853.
[12]K. Suzuki, A. Seno, H. Tanabe, K. Ueno, Synth. Met., 2004, 143, 89.
[13]M. T. Lee, H. H. Chen, C. H. Liao, C. H. Tsai, C. H. Chen, Appl. Phys. Lett., 2004, 85, 3301.
[14]J. H. Lee, T. C. Lin, C. C. Liao, Proc. of SPIE, 2005, 5740, 138.
[15]Y. H. Ho, T. C. Lin, C. F. Wu, J. H. Lee, Proc. of SPIE, 2006, 6333, 633303.
[16]M. T. Lee, C. H. Liao, C. H. Tsai, C. H. Chen, Adv. Mater., 2005, 17, 2493.
[17]陳裕翰，國立清華大學博士論文，中華民國壹百年七月。
[18]古博仁，國立清華大學博士論文，中華民國九十四年十月。
[19]H. H. Chou, Y. H. Chen, H. P. Hsu, W. H. Chang, Y. H. Chen, C. H. Cheng, Adv. Mater.,2012, 24, 5867-5871.
[20]S.-O. Jeon, Y.-M. Jeon, J.-W. Kim, C.-W. Lee, M.-S. Gong, Synth. Met. 2007, 157, 558.
[21]P. W. Atkins, Molecular Quantum Mechanics, Oxford University Press, 1983.
[22]Z. H. Kafafi, Ed. Organic Electroluminescence, Tailor & Francis Group, LLC, 2005.
[23]D. Y. Kondakov, J. Appl. Phys. 2007, 102, 114504.
[24]C. A. Parker, C. G. Hatchard, Proc. Chem. Soc., 1962, 147.
[25]Y. Nichikawa, K. Hiroaki, Y. Onoue, K. Nishikawa, Y. Yoshitake, T. Shigematsu, Bunseki Kagaku, 1983, E115, 32
[26]B. Valeur, Molecular Fluorescence, Wiley-VCH, Weinheim 2002, 41.
[27]C. A. Parker, Proc. R. Soc. Lond. A, 1963, 276, 125.
[28]W. Zhao, F. N. Castellano, J. Phys. Chem. A, 2006, 110, 11440.
[29]電激發光暫態螢光光譜由國立清華大學材料系周子喻量測。
[30]Schmidt, Tobias D. and Setz, Daniel S. and Flämmich, Michael and Frischeisen, Jörg and Michaelis, Dirk and Krummacher, Benjamin C. and Danz, Norbert and Brütting, Wolfgang, Applied Physics Letters, 2011, 99, 163302
[31]S. Moller,S. R. Forrest, J. Appl. Phys. Lett., 2007, 90, 091102
[32]陳鑫金，OLED: 有機電激發光材料與元件，中華民國九十四年。
[33]H.-W. Lin, C.-L. Lin, H.-H. Chang, Y.-T. Lin, C.-C. Wu, Y.-M. Chen, R.-T. Chen, Y.-Y. Chien, and K.-T. Wong, J. Appl. Phys.,2004, 95, 88
[34]B. Kim,Y. Park,J. Lee, D. Yokoyama, J.-H. Lee, J. Kidob and J. Park, J. Mater. Chem. C, 2013, 1,432
[35]H. Kuma and C. Hosokawa, Sci. Technol. Adv. Mater., 2014, 15, 034201
[36]D. Yokoyama, Y. Park, B. Kim, S. Kim, Y.-J. Pu, J. Kido, and J. Park, Appl. Phys. Lett., 2011, 99, 123303
[37]K.H Kim, J.Y Baek, C.W. Cheon, C-K Moon, B. Sim, M.Y. Choi, J-J. Kim, Y-H. Kim, Chem. Comm., 2016, 10, 1039
[38]C.-K. Moon, K.-H. Kim, J. W. Lee, J.-J. Kim, Chem. Mater., 2015, 27, 2767
[39]水平極化光譜由國立清華大學材料系周子喻量測。

[1]R. Meerheim, B. Lüssem, K. Leo, Proc. IEEE, 2009, 97, 1606.
[2]P. Tyagi, R. Srivastava, A. Kumar, G. Chauhan, A. Kumar, S.S. Bawa, M.N. Kamalasanan, Synt. Met., 2010, 160, 1126.
[3]CH. Jonda, A. B. R. Mayer, U. Stolz, J. Mater. Sci., 2000, 35, 5645.
[4]L. S. Hung, C. W. Tang, Appl. Phys. Lett., 1999, 74, 3209.
[5]H. You, Y.Dai, Z. Zhang, D. Ma, J. Appl. Phys., 2007, 101, 026105.
[6]F. Wang, X. Qiao, T. Xiong, D. Ma, Org. Electron., 2008, 9, 985.
[7]Y.-K. Kim, J. W. Kim, and Y. Park, Appl. Phys. Lett., 2009, 94, 063305.
[8]T. Reichert, T. P. I. Saragi, J. Salbeck, RSC Adv., 2012, 2, 7388.
[9]P. Y. Chou, H. H. Chou, Y. H. Chen, T. H. Su, C. Y. Liao, H. W. Lin, W. C. Lin, H. Y. Yen, I. C. Chen, C. H. Cheng, Chem. Comm., 2014, 50, 6869-6871.
[10]Y. Lee, J. Kim, S. Kwon, C.-K. Min, Y. Yi, J.W. Kim, B. Koo, M.P. Hong, Org. Electron., 2008, 9, 407.
[11]Q. Wang, H. Aziz, Org. Electron., 2011, 12, 1571.
[12]周沛瑜，國立清華大學博士論文，中華民國壹百零三年二月。
[13]F. Wang, X. Qiao, T. Xiong, D. Ma, Org. Electron. 2008, 9, 985.
[14]X.-Y. Jiang, Z.-L. Zhang, J. Cao, W.-Q. Zhu, Solid-State Electron. 2008, 52, 952.
[15]S. Hamwi, J. Meyer, T. Winkler, T. Riedl, W. Kowalsky, Appl. Phys. Lett., 2009, 94, 253307.
[16]陳奕翔，國立清華大學博士論文，中華民國壹百零五年七月