奈米尺寸半導體量子點的能階隨粒徑大小與組成元素而改變，具有獨特之光學特性。其應用量子點發光二極體(QDs-LEDs)具有高色彩純度、透明度、可延展性且具經濟效益的顯色技術。然而過去量子點主要以鎘(Cd)為主材料，其因為毒性限制了發展。近年來主要的研究為尋找鎘的替代材料，而磷化銦(InP)為主體的量子點因在光電特性上的表現而逐漸嶄露頭角。
本篇論文中，我們為了開發友善環境且低毒性無重金屬的量子點LED，我們使用高溫注射法合成無重金屬之InP/ZnS核殼量子點，並以低成本且安全的前驅物(DMA)3P取代以往危險且昂貴的前驅物，接著在其外層包覆硫化鋅(ZnS)，最後形成磷化銦/硫化鋅核殼量子點。再將測試磷化銦/硫化鋅核殼量子點光學特性、結構、熱穩定性後，將其製成量子點LED，最後測試其光電性能。
再者，我們研究藉由銀奈米立方體(Ag nanocube)，增強InP/ZnS量子點之螢光。依序利用銀奈米立方體和製備之磷化銦/硫化鋅核殼量子點在玻璃基板上成薄膜，測試其金屬增強螢光(Metal Enhanced Fluorescence, MEF)之效果。初步測試發現確實有螢光增強之效果。

Semiconductor quantum dots (QDs), of which particle sizes are in the nanometer scale, have unique size-controllable optical properties.
Quantum dots light emitting diodes (QDs-LEDs), which is application of QDs, have been considered as potential display technologies with the characterizations of high color purity, flexibility, transparency and cost efficiency. For the practical applications, the development of heavy-metal free QDs-LEDs from environment-friendly materials is the most important issue to reduce the impacts of human health and environmental pollution.
In this work, heavy-metal free InP/ZnS core/shell QDs were synthesized by solvothermal method with low-cost, safe and environment-friendly precursors (DMA)3P. The structural and optical characterizations demonstrated the successful syntheses of InP/ZnS core/shell QDs. The maximum fluorescence peak of InP/ZnS core/shell QDs was obtained at ~530 nm. The optimal process conditions were investigated for InP/ZnS core/shell QDs-LEDs fabrication to obtain the best performance. Overall, the multilayered InP/ZnS core/shell QDs-LEDs reveal potential to be the heavy-metal free QDs-LEDs for future display applications.
On the other side, the enhancement of the fluorescence of InP/ZnS quantum dots by silver nanocubes was investigated. We sequentially deposited silver nanocubes and InP/ZnS quantum dots on ITO substrate. After preliminary testing, we found that the fluorescence of InP/ZnS quantum dot is indeed enhanced by silver nanocubes because of Metal-Enhanced Fluorescence theory.

謝誌 I
摘要 II
Abstract III
目錄 IV
圖表目錄 VIII
第一章 緒論 1
1-1 前言 1
1-2 奈米材料介紹 1
1-2-1 表面效應 2
1-2-2 小尺寸效應 4
1-2-3 量子效應 5
1-2-4 量子穿隧效應 7
1-3 奈米材料的製備技術 8
1-3-1 由上而下(top down)的方法 8
1-3-1 由下而上(bottom up)的方法 9
第二章 文獻回顧與研究動機 11
2-1 量子點介紹 11
2-2 量子點生長理論 12
2-3 量子點結構 13
2-3-1 核心結構 (Core Structure) 13
2-3-2 量子點表面有機物 16
2-3-3 核殼層半導體量子點 17
2-3-4半導體量子點介紹 18
2-3-4-1 Ⅱ-Ⅵ族半導體量子點 19
2-3-4-2 Ⅲ-Ⅴ族半導體量子點 20
2-3-4-3 Ⅰ-Ⅲ-Ⅵ族半導體量子點 21
2-4 量子點的螢光量子產率 (QUANTUM YIELD) 23
2-5 量子點之應用 25
2-5-1 發光二極體 (LED) 25
2-5-2 金屬增強螢光 (Metal-Enhanced Fluorescence) 29
2-5-2-1 金屬奈米粒子的侷域表面電漿共振效應 29
2-5-2-2 金屬增強螢光理論 30
2-6 研究動機與目的 32
第三章 實驗設備與步驟 33
3-1 分析儀器設備介紹 33
3-1-1光致螢光光譜儀 (Photoluminescence) 33
3-1-2 可見光/紫外光分光光譜儀 (UV/Vis Spectrophotometer) 34
3-1-3 螢光陣列光譜儀 (Midascan™ dual-channel scanner) 35
3-1-4 穿透式電子顯微鏡 (Transmission Electron Microscope) 35
3-1-5 掃描式電子顯微鏡 (Scanning Electron Microscope) 37
3-1-6 X光繞射儀 (X-ray Diffraction) 38
3-2 實驗藥品 40
3-3 實驗 41
3-3-1 實驗流程 41
3-3-2 實驗步驟 41
3-3-2-1 疏水性InP量子點合成 42
3-3-2-2 疏水性核殼層InP/ZnS量子點合成 43
3-3-2-3 疏水性核殼層InP/ZnS量子點純化 44
3-3-2-4 核殼層InP/ZnS量子點於Ag cube上成膜 46
第四章 結果與討論 47
4-1 磷化銦/硫化鋅核殼量子點的吸收與螢光光譜 47
4-2 可調控波長之磷化銦/硫化鋅核殼量子點 48
4-3 疏水性磷化銦/硫化鋅核殼量子點性質 50
4-4 疏水性磷化銦/硫化鋅核殼量子點熱穩定性 54
4-5 磷化銦/硫化鋅核殼量子點之發光二極體 55
4-6 銀奈米立方體對磷化銦/硫化鋅量子點螢光增強 58
第五章 結論與未來展望 61
參考文獻 62

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