臺灣博碩士論文加值系統

本論文研究高溫固態反應對ZnO-SnO2核-殼奈米柱在顯微結構、光學特性、光催化活性以及低濃度NO2氣體感測響應倍率之影響。在本研究中，透過結合水熱法以及真空濺鍍法合成ZnO-SnO2核-殼奈米柱。根據X光繞射以及穿透式電子顯微鏡分析結果，SnO2殼與ZnO核材料在900 ℃會產生高溫固態反應使超薄SnO2殼層轉換為三元的Zn2SnO4 (ZTO)相。此外，由電子顯微鏡影像可確定高溫固態反應伴隨表面粗糙化。相較之下，ZnO-ZTO核-殼奈米柱在表面處具有比ZnO-SnO2奈米柱更高的氧空缺密度。在含有ZnO-SnO2與ZnO-ZTO奈米柱的羅丹明B溶液之光降解結果比較下，ZnO-ZTO奈米柱比ZnO-SnO2奈米柱擁有更高的光催化活性。此外，相較於ZnO-SnO2奈米柱，當ZnO-ZTO奈米柱暴露於低濃度NO2氣體時展現更高的氣體感測響應倍率。ZnO-SnO2與ZnO-ZTO奈米柱之間顯微結構與光學特性顯著的差異解釋了本研究中所獲得之ZnO-ZTO奈米柱具有較佳光催化活性以及NO2氣體感測結果。

The effects of high-temperature solid-state reactions on the microstructures, optical properties, photoactivity, and low-concentration NO2 gas-sensing sensitivity of ZnO–SnO2 core–shell nanorods were investigated. In this study, the ZnO–SnO2 core–shell nanorods were synthesized through a combination of the hydrothermal method and vacuum sputtering. According to X-ray diffraction and transmission electron microscopy analyses, high-temperature solid-state reactions between the SnO2 shell and ZnO core materials at 900 ℃ engendered an ultrathin SnO2 shell layer for transforming into the ternary Zn2SnO4 (ZTO) phase. Moreover, surface roughening was involved in the high-temperature solidstate reactions, as determined from electron microscopy images. Comparatively, the ZnO–ZTO nanorods have a higher oxygen vacancy density near the nanostructure surfaces than do the ZnO–SnO2 nanorods. The photodegradation of rhodamine B dyes under simulated solar light irradiation in presence of the ZnO–SnO2 and ZnO–ZTO nanorods revealed that the ZnO–ZTO nanorods have a higher photocatalytic activity than do the ZnO–SnO2 nanorods. Furthermore, the ZnO–ZTO nanorods exhibited higher gassensing sensitivity than did the ZnO–SnO2 nanorods on exposure to low-concentration NO2 gases. The substantial differences in the microstructure and optical properties between the ZnO–SnO2 and ZnO–ZTO nanorods accounted for the photocatalytic activity and NO2 gas-sensing results obtained in this study.

摘要 I
Abstract II
目次 III
表次 V
圖次 VI
第一章 前言 1
第二章 文獻回顧 3
2-1半導體材料 3
2-1-1 氧化物半導體 3
2-1-2 氧化鋅(ZnO)結構與特性 4
2-1-3 二氧化錫(SnO2)結構與特性 4
2-2 低維度半導體材料 4
2-2-1 表面效應 5
2-2-2 尺寸效應 5
2-3 低維度奈米結構生長機制與製備方法 5
2-4 薄膜製程 6
2-4-1 化學氣相沉積法 6
2-4-2 脈衝雷射剝鍍法 7
2-4-3溶膠-凝膠法 7
2-4-4 濺鍍法 7
2-5 核-殼結構 8
2-6 固態反應 9
2-7 半導體材料之光催化降解原理與應用 9
2-8 半導體材料之氣體感測元件應用 10
第三章 實驗方法與流程 31
3-1 實驗流程 31
3-2 實驗藥品與設備 31
3-2-1 實驗藥品 31
3-2-2 實驗設備 31
3-3 材料製備程序 32
3-3-1 試片表面清潔 32
3-3-2 濺鍍法製備氧化鋅晶種層 32
3-3-3 水熱法製備一維氧化鋅奈米柱 32
3-3-4 濺鍍法製備ZnO-SnO2核-殼異質奈米柱結構 33
3-3-5 高溫退火處理製備ZnO-ZTO核-殼異質奈米柱結構 33
3-4 材料分析 34
3-4-1 掃描式電子顯微鏡分析 (Scanning Electron Microscope, SEM) 34
3-4-2 X光繞射分析 (X-ray Diffractometer, XRD) 34
3-4-3 穿透式電子顯微鏡分析 (Transmission Electron Microscope, TEM) 35
3-4-4 X光光電子能譜儀分析 (X-ray Photoelectron Spectrometer, XPS) 35
3-4-5 紫外光可見光分光光譜儀 (Ultraviolet-Visible Spectroscopy, UV-Vis) 35
3-4-6 光致發光能譜儀分析 (Photoluminescence, PL) 36
3-5 光降解特性分析 (Photodegradation) 36
3-5-1 羅丹明B (Rhodamine B, RhB)水溶液之調配 36
3-5-2 光降解試驗 36
3-6 氣體感測元件特性分析 (Gas Sensing Properties) 37
第四章 結果與討論 51
4-1 微結構分析 51
4-2 光電子化學能譜儀組成分析 52
4-3 光學特性分析 53
4-4 光降解特性分析 54
4-5 氣體感測特性分析 55
第五章 總結論 87
參考文獻 88

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