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[1] CISCO Systems Inc., “The Zettabyte Era: Trends and Analysis”, 2016 [2] International technology roadmap for semiconductors 2.0, “Executive Summary”, 2015 [3] NASP, “New concept for the monolithic integration of optoelectronic integration circuits on Silicon subsrate: Silicon Photonics” [4] M. Feng, N. Holonyak, Jr., W. Hafez, “Light-emitting transistor: Light emission from InGaPÕGaAs heterojunction bipolar transistors”, Appl. Phys. Lett., vol. 84, pp. 151-153, 2004 [5] M. Feng,N. Holonyak, Jr., H. W. Then, C. H. Wu, G. Walter, “Tunnel junction transistor laser”, Appl. Phys. Lett., vol. 94, pp. 041118, 2009 [6] R. Chan, M. Feng, N. Holonyak, Jr., G. Walter, “Microwave operation and modulation of a transistor laser”, Appl. Phys. Lett., vol. 86, pp. 131114, 2005 [7] William Liu, Shou-Kong Fan, Timothy Henderson, and Dave Davito, “Temperature dependent of current gains in GaInP/GaAs and AlGaAs/GaAs Heterojunction Bipolar Transistors”, IEEE Trans. Electron Devices, vol. 40, no. 7, pp. 1351-1352, Jul. 1993 [8] M.Feng, N. Holonyak Jr., H. W. Then, and G.Walter, “Charge control analysis of transistor laser operation”, Appl. Phys. Lett. 91, 053501, 2007 [9] C-Y Tsai, C-Y Tsai, Y-H Lo, R M. Spencer, L F. Eastman, “Nonlinear Gain Coeffiients in Semiconductor Quantum-Well Lasers: Effects of Carrier Diffusion, Capture, and Escape”, IEEE J. Quantum Electron. , vol. 1, pp. 316-330, 1995 [10] H. Schneider and K. v. Klitzing, “Thermionic emission and Gaussian transport of holes in a GaAs/AlxGa1-xAs multiple-quantum-well structure”, Phy. Rev. B, vol 38, pp. 6160-6165, 1988 [11] J. Nelson, M. Paxman, K. W. J. Barnham, J. S. Roberts, C. Button, “Steady-State Carrier Escape from Single Quantum Wells”, IEEE J. Quantum Electron. , vol 29, pp. 1460-1467, 1993 [12] D. A. Ahmari, M. L. Hattendorf, M. Feng, “Temperature Dependence of InGaP/GaAs Heterojunction Bipolar Transistor DC and Small-Signal Behavior, IEEE Trans. Electron Devices, vol. 46, pp. 634-640, 1999 [13] Y. Arakawa, H. Sakaki, M Nishioka, J Yoshino, “Recombination lifetime of carriers in GaAs-GaA~As quantum wells near room temperature”, Appl. Phys. Lett., vol. 48, pp. 519-521, 1985 [14] G.W. ‘t Hooft, M.R. Leys, H.J. Talen-v.d. Mheen, “Temperature dependence of the radiative recombination coefficient in GaAs-(Al, Ga)As quantum wells, Superlattices and Microstructures, vol 7, pp. 307-310, 1985K. V [15] P. T. Landsberg, “The Band-Band Auger Effect in Semiconductor”, Solid-State Electron, vol. 30, pp. 1107-1115, 1987 [16] M. L. Lovejoy, M. R. Melloch and M. S. Lundstrom, “Temperature dependence of minority and majority carrier mobilities in degenerately doped GaAs”, Appl. Phys. Lett., vol. 67, pp. 1101-1103, 1995 [17] S. Tiwari, S. L. Wright, “Material properties of p-type GaAs at large dopings”, Appl. Phys. Lett., vol. 56, pp. 563-565, 1990 [18] D. Huber, M. Bitter, T. Morf, C. Bergamaschi, H. Melchior and H. Jackel, “46GHz bandwidth monolithic InP/lnGaAs pin/SHBT photoreceiver”, Electronics Letters, vol. 35, pp. 40-41, 1999 [19] S. Chandrasekhar, Leda M . Lunardi, A. H . Gnauck, R. A. Hamm, G. J. Qua, “High-speed Monolithic p-i-n/HBT and HPT/HBT Photoreceivers Implemented with Simple Phototransistor Structure”, IEEE Photon. Technol. Lett., vol. 5, pp. 1316-1318, 1993 [20] M. E. Hafizi, C. R. Crowell, M. E. Grupen, “The DC Characteristics of GaAs/AlGaAs Heterojunction Bipolar Transistors with Application to Device Modeling”, IEEE Trans. Electron Devices, vol. 37, pp. 2120-2129, 1990 [21] H. Ito, T. Ishibashi, T. Sugeta, “Fabrication and Characterization of AlGaAs/GaAs Heterojunction Bipolar Transistors”, IEEE Trans. Electron Devices, vol. 34, pp. 224-229, 1987 [22] R. Sridhara, S. M. Frimel, K. P. Roenker, N. Pan, J. Elliott, “Performance Enhancement of GaInP/GaAs Heterojunction Bipolar Phototransistors Using DC Base Bias”, J. Lightwave Technol., vol. 16, pp. 1101-1106, 1998 [23] S. M. Frimel, K. P. Roenker, “Gummel–Poon model for Npn heterojunction bipolar phototransistors”, J. Appl. Phys. Lett., vol. 82, pp. 3581-3592, 1997
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