臺灣博碩士論文加值系統

一種基於疊接技術的氮化鎵元件在近幾年來中高頻(200 kHz to 500 kHz)的應用範圍受到廣泛的討論。基於它元件本身的結構，在元件內部對於底部金屬平面的接法有兩種不同的選擇，可以與汲極或是源極連接，與一般傳統的垂直式結構的Si based Power MOSFET只能連接汲極不同。
本論文提出使用氮化鎵如上所提的兩種接法，經由選用適當的氮化鎵封裝組合來降低電源轉換器中的共模雜訊。就結果而言，可以有效低降低電源轉換器的傳導電磁干擾，除了降低共模電磁干擾以及適當的封裝選擇，其他相關聯的理論說明也都會在本論文中提出。
一個240W LLC搭配一前級PFC的電源轉換器架構設計做為實驗電路來驗證本論文所提出的方法。從結果發現此方法可以很有效低降低傳導電磁干擾，而本論文所提出的方法，也可應用於其他的電源轉換器架構或是換流器。

The gallium nitride (GaN) cascode switch has received much attention recently for line-operated medium-high frequency (200 kHz to 500 kHz) applications. Because of its device structure, there are two package options available with regard to the tab internal connection; either the drain terminal or the source terminal is electrically connected to the metallic plate of the device package, unlike the conventional vertical power Si based MOSFET in which the drain terminal can be connected to the device metallic plate.
It is proposed in the dissertation that taking advantage of the unique feature of GaN devices packages mentioned above and using a proper combination of the GaN devices in a converter circuit converter common mode noise can be reduced. As a result, the converter conducted EMI can be reduced. The theory is explained and the rule for proper package selection are described in the dissertertation.
A 240-Watt LLC power converter with a front-end power-factor-correction (PFC) circuit was built for experimental verification. In the experiment, significant reduction in the conducted EMI was observed. The proposed strategy can be applied to other converter or inverter configurations. GaN devices provide an option, unavailable in power MOSFET devices to significantly reduce the converter conducted EMI.

Table of Contents
口試委員會審定書 2
Acknowledgments 4
摘要 i
Abstract ii
Table of Contents iii
List of Figures v
List of Tables vii
Chapter 1. Introduction 1
1.1 Research Background 1
1.2 Brief Review of Power Semiconductor Devices 2
1.2.1 Bipolar Technology 2
1.2.2 MOSFET Technology 2
1.2.3 Bipolar-MOSFET Combination Devices 3
1.2.4 Wide Band-gap Devices 3
1.2.5 GaN Material 3
1.3 Status of GaN devices 6
1.4 The Focus of the Dissertation 7
1.5 Dissertation Outlines 7
Chapter 2. Review of GaN HEMT and Cascode Switch 9
2.1 GaN HEMT 9
2.1.1 Device Structure of a GaN HEMT 9
2.1.2 Two Different Mode of GaN HEMT 11
2.2 Cascode Switch (CS) 14
2.3 Package Aspects of a CS 17
2.4 Summary 19
Chapter 3. Device Package Effects on the Conducted EMI Noise 20
3.1 Measurement of Conducted EMI Noise 20
3.2 Analysis of Conducted EMI Noise 22
3.3 Device Package Effects on the Measured EMI 24
3.4 Package Selection Strategy for Reducing Common Mode Noise 30
3.4.1 Noise Analysis for an LLC Converter with Power Factor Correction 30
3.4.2 Conducted CM Noise Current Path in the PFC circuit 31
3.4.3 Conducted CM Noise Path in the LLC Converter circuit 32
3.5 Summary 34
Chapter 4. Verifications of the Proposed Strategy 35
4.1 Experimental Breadboard 35
4.2 Experimental Results 39
4.3 Discussion of Results 43
4.4 Summary 46
Chapter 5. Conclusions and Suggestions for Further Research 47
5.1 Conclusions 47
5.2 Suggestions for Future Research 48
References 49
Appendix A. Design Process of PFC and Selected IC 53
Appendix B. Design Process of LLC and Selected IC 57
Appendix C. The Impedance Feature of SMD Bead Core 63

List of Figures
Fig 1.1 Limitation of on-resistance versus breakdown voltage [6] 5
Fig 1.2 Comparison products from Yaskawa [6] 7
Fig 2.1 A diagram illustrating a HEMT device structure [17] 10
Fig 2.2 Conventional structure of MOSFET 10
Fig 2.3 Turn-on conditions of D-mode GaN and MOSFET [17] 11
Fig 2.4 Turn-on condition of E-mode GaN 12
Fig 2.5 E-mode GaN HEMT structure [17] 13
Fig 2.6. A circuit diagram of the cascode switch configuration. 14
Fig 2.7. Waveforms of cacode switch on-off sequence 15
Fig 2.8. Cross section of standard and super-junction MOSFET [30] 16
Fig 2.9 S-tab package 18
Fig 2.10 D-tab package 18
Fig 3.1 Block diagram of EMI conduction test 20
Fig 3.2 Equivalent circuit of LISN 21
Fig 3.3 Equivalent circuit of noise frequency 22
Fig 3.4 A diagram illustrating conducted EMI current coupling mechanism 23
Fig 3.5 Two different circuit arrangements for the primary side of a flyback converter circuit (a) Case A (b) Case B 25
Fig 3.6 Traditional TO-220 package of MOSFET 26
Fig 3.7 Package structure of a GaN HEMT 27
Fig 3.8 Inside structure photo of a CS [6] 28
Fig 3.9 Connection diagram of a CS 28
Fig 3.10 Diagram of parasitic capacitance for D-tab 29
Fig 3.11 Photo of the finished package of the die shown in Fig 3.8 29
Fig 3.12 Diagram of the power circuit 31
Fig 3.13 The circuit diagram of a boost type PFC and the CM noise current path 32
Fig 3.14 the circuit diagram of an LLC converter 33
Fig 3.15 Operating waveforms of LLC 33
Fig 4.1 Full function block of the experimental circuit 36
Fig 4.2 Breadboard of the experimental circuit 36
Fig 4.3Experimental circuit diagram 37
Fig 4.4 Breadboard layout placement of Q1 38
Fig 4.5 Breadboard layout placement of QH and QL 39
Fig 4.6 Test environment 41
Fig 4.7 EMI measured result for Case I 42
Fig 4.8 EMI measured result for Case II 42
Fig 4.9 EMI measured result for Case III 43
Fig 4.10 Switching voltage VDS waveform of Q1; Blue for S-tab Grey for D-tab 44
Fig 4.11 Diagram of a three-phase inverter 45
Fig 4.12 Diagram of totem pole bridgeless PFC 46


List of Tables
Table 1.1 Material properties of GaN, SiC, Silicon 5
Table 1.2 Comparison among different device 5
Table 2.1 Comparison of 600V devices parameters of CS GaN HEMT and Cool-MOS 17
Table 4.1 The component values and operating conditions of the experimental circuit 37
Table 4.2 Three cases of package combination 41

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