臺灣博碩士論文加值系統

本論文主要探討以化學氣相傳導法成長之硒化銦(InSe)層狀半導體奈米結構光電導及電傳輸特性。利用機械剝離法將硒化銦單晶分離成二維奈米結構，並利用聚焦式離子束顯微鏡製作二維奈米結構之歐姆電極。對硒化銦奈米薄片進行光電導量測，發現具有明顯的光電流反應，且隨著光強度增加，光電流也表現出非線性的增加。在相同的綠光雷射波長條件下，藉由比較不同層狀半導體材料之光電流，發現硒化銦奈米結構有著最佳的光響應。所記算出的歸依化光電導增益，硒化銦至少大於所有層狀半導體奈米結構兩個數量級。在不同雷射波長下，發現硒化銦奈米薄片對紫外光具有較佳的光電流反應。藉由環境變化之光電導量測，顯示硒化銦遵循著氧敏化光電導機制。造成硒化銦奈米薄片具有最佳的光電導特性之物理機制也將在本論文中探討。

Photoconduction and electronic transport properties in the direct-bandgap layer semiconductor of hexagonal indium selenide(InSe)grown by chemical vapor transport (CVT)have been investigated. The InSe layer nanostructure devices were fabricated using focused-ion beam (FIB) deposition and platinum (Pt) as the contact metal. By using different excitation wavelength, the InSe nanosheets show a higher photoresponse to the ultraviolet light illumination.The photocurrent increases nonlinearly with an increase at light intensity.Notably, under the same wavelength excitation , the InSe nanosheet photodetectors show the optimal responsivity and detectivity compared to most of the layer semiconductor nanostructures. The normalized gain, which defines the inherent photocurrent collection efficiency , of the In Senanosheets is over two orders of magnitude higher than those of the otherlayer materials. The environment-dependent photoconductivity measurement indicates that the InSe nanomaterials follow the oxygen-sensitive photoconduction mechanism. The physical origins resulting in the superior photoconductivity and detector performance in the InSe nanosheets were also discussed.

中文摘要..................................................I
ABSTRACT................................................II
誌謝....................................................III
目錄....................................................IV
圖目錄.................................................VII
表目錄..................................................IX
第一章 緒論.............................................1
第二章實驗方法............................................3
2.1 硒化銦之晶體成長......................................3
2.2 硒化銦之形貌與結構特性檢測.............................4
2.2.1拉曼散射儀(Raman scattering spectroscopy)............4
2.2.2 X光繞射儀 (X-ray diffractometry, XRD)...............7
2.2.3掃描式電子顯微鏡 (scanning electron microscopy, SEM)........10
2.2.4 雙束型聚焦離子束顯微鏡 (dual-beam focused ion beam, FIB)....12
2.2.5原子力顯微鏡(atomic force microscopy, AFM)..................16
2.3 硒化銦奈米結構元件製作................................19
2.3.1元件基板製作........................................19
2.3.2機械式剝離法將層狀材料分散...........................20
2.3.3層狀樣品電極製作.....................................23
2.4 奈米薄片之暗電導特性研究...............................25
2.4.1 電流對電壓曲線量測(current-voltage measurement).....25
2.4.2 奈米材料之光電導特性研究.............................26
2.4.3 功率相依之光電導量測................................26
2.4.4 環境變化之光電導量測................................27
第三章結果與討論..........................................30
3.1硒化銦層狀單晶與奈米材料之表面形貌與結構分析.............30
3.1.1表面形貌............................................30
3.1.2晶體結構............................................33
3.2 硒化銦元件之SEM形貌分析...............................35
3.2.1硒化銦奈米結構元件製作...............................35
3.3利用原子力顯微鏡 (AFM) 定義層狀奈米元件厚度.............37
3.4 硒化銦奈米結構元件之暗電導分析.........................39
3.4.1 硒化銦奈米結構之電壓對電流量測.......................39
3.4.2 Transmission line model...........................41
3.4.3 金氧半場效應電晶體量測..............................43
3.5硒化銦功率相依光電導量測...............................46
3.5.1硒化銦奈米結構之光電導...............................46
3.5.2硒化銦奈米結構不同雷射波長下之光電導反應..............48
3.5.3光電導效率量測......................................50
3.5.4 氧氣敏化光電導機制.................................58
第四章 結論..............................................61
參考文獻.................................................62

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