臺灣博碩士論文加值系統

本論文主要探討微波通入氮氣交聯PVP閘極絕緣層應用於可撓式元件上，我們起初探討微波應用於玻璃基板的製程，藉此找到微波應用於玻璃基板的最佳製程條件，最後再將此製程條件應用於可撓式元件製程中。
首先，我們利用微波通入不同製程氣體交聯PVP，藉此發現微波通入氮氣的效果最為顯著。其次，透過微波通入不同氮氣流量交聯PVP，我們從中發現微波通入氮氣後，氮可以有效與PVP中的斷鍵、懸浮鍵(dangle bond)鍵解，並且減少PVP中的氫氧根，不過當通入的氮氣過多時，並無法有效降低閘極絕緣層中的氫氧根，反而使微波交聯PVP的效果下降，因此我們選用微波通入氮氣的最佳流量為20sccm。再者，微波通入氮氣在不同加熱時間下交聯PVP可發現當加熱時間到達60分鐘時，其平帶電壓逐漸往VGS=0V的方向偏移，Ioff降了至0.18nA，這代表PVP有充分交聯，以及所通入的氮與斷鍵、懸浮鍵鍵解，使其中的斷鍵、懸浮鍵減少，其元件載子移動率可達到1.516cm2/V-s、S.S只有0.674 V/decade。綜合上述的實驗與分析，選擇微波通入氮氣20sccm 60min為微波應用於玻璃基板的最佳製程條件。
在可撓式元件的製程中，我們選用金屬鋁(Al)為閘極電極，而因為鋁的導電率相較於ITO的導電率提升了103以上，因此我們利用微波照射閘極金屬交聯PVP的加熱時間必須重新抓取，我們經由不同加熱時間測試下找到微波通氮應用於可撓式基板的參數為N2 20 sccm 5 min，其載子移動率可達到1.064cm2/V-s ，S.S 為1.209 V/decade、Vth為 -12.71V，成功做出Mobility>1的可撓式元件。

The research aimed to discuss the application of PVP gate insulator cross-linked by Microwave in N2 ambient in flexible device. We first analyzed the process of Microwave used in glass substrate to find out the best processing condition, and finlly applied the condition to the process of flexible device.
First, we used PVP gate insulator cross-linked by Microwave in different gas ambient, and found that the effect of N2 ambient was the most significant. From using PVP cross-linked by Microwave in different N2 flow ambient, we found that N2 could effectively bond with the broken bond and dangle bond in PVP, and reduced the hydroxyl groups in PVP. However, excessive N2 could not effectively reduce the hydroxyl groups in the gate insulator, but declined the effect of PVP gate insulator cross-linked by Microwave. Thus, we presumed that the best flow in Microwave in N2 ambient was 20sccm. Moreover, we used PVP cross-linked by Microwave under different heating time, and found that when the heating time reached 60 minutes, the flat-band voltage gradually drifted to VGS=0V and Ioff dropped to 0.18nA. It showed that PVP was fully cross-linked and N2 reduced the broken bond and dangle bond by bonding with them. The Mobility could reach 1.516cm2/V-s while S.S was 0.674 V/decade. In summary, we presumed that the best processing condition of Microwave used in glass substrate in N2 ambient was 20sccm at the heating time of 60 minutes.
In the process of flexible device, we used Al as the gate metal because its conductivity increased by above 103 compared to the result of ITO. Thus, the heating time of gate metal cross-linked PVP using Microwave irradiation must be remeasured.
Through the experiments under different heating time, we found that the parameter of Microwave in N2 ambient applied to flexible substrate was N2 20 sccm 5 min while its Mobility could reach 1.064cm2/V-s, S.S was 1.209 V/decade, and Vth was -12.71V. The flexible device which met Mobility>1 was fabricated successfully.

論文摘要 I
ABSTRACT III
誌謝 V
目錄 VI
圖目錄 VIII
表目錄 XII
第一章 概論 1
1.1 研究背景 1
1.1.1. 有機薄膜電晶體 1
1.1.2. 微波與傳統退火 3
1.2 研究動機 4
1.3 論文大綱 5
第二章 有機薄膜電晶體介紹 6
2.1 有機半導體介紹 6
2.1.1. 有機半導體材料概論 6
2.1.2. 有機半導體Pentacene之特性介紹 10
2.1.3. 有機絕緣層的介紹 11
2.2 有機半導體之傳輸機制 12
2.2.1. 載子跳躍模型機制 Hopping Model) 13
2.2.2. 陷阱補捉與熱釋放模型機制 14
2.2.3. 偏極子模型機制(The polaron model) 15
2.3 有機薄膜電晶體結構 16
2.4 有機薄膜電晶體之操作模式 19
2.5 電性參數與萃取方式 25
2.5.1. 載子移動率(Mobility, μ) 25
2.5.2. 臨界電壓(Threshold Voltage, Vth) 27
2.5.3. 次臨界斜率(Subthreshold Swing, S.S.) 28
2.5.4. 開關電流比(On/Off Current Ratio, Ion/Ioff) 29
第三章 有機薄膜電晶體製程方法及分析機台 30
3.1 有機薄膜電晶體之基板製作流程 30
3.1.1. 玻璃基板(Glass Substrate) 30
3.1.2. 塑膠基板(PI Substrate) 31
3.2 閘極絕緣層(Gate Insulator Layer) 36
3.2.1. 聚乙烯苯酚(PVP)之製備 38
3.2.2. 聚乙烯苯酚(PVP)之交聯 40
3.3 主動層(Active Layer) 41
3.4 源極/汲極(Source/Drain) 42
3.5 製程機台及分析設備介紹 45
3.5.1. 製程機台 45
3.5.2. 半導體參數分析儀 48
3.5.3. 傅立葉轉換紅外線光譜儀 49
3.5.4. 原子力顯微鏡 50
3.5.5. 接觸角(Contact angle)量測 50
第四章 微波加熱原理與實驗結果 51
4.1 微波金屬加熱原理 51
4.2 不同製程氣體下對微波交聯PVP閘極絕緣層的影響 58
4.2.1. 簡介 58
4.2.2. 實驗參數 58
4.2.3. 實驗結果與分析 59
4.3 不同氣體流量對微波通氮交聯PVP閘極絕緣層的影響 67
4.3.1. 簡介 67
4.3.2. 實驗參數 67
4.3.3. 實驗結果與分析 68
4.4 不同加熱時間下對微波通氮交聯PVP閘極絕緣層的影響 75
4.4.1. 簡介 75
4.4.2. 實驗參數 75
4.4.3. 實驗結果與分析 76
第五章 微波通氮交聯PVP閘極絕緣層應用於可撓式有機薄膜電晶體 84
5.1 探討金屬閘極對於可撓式有機薄膜電晶體的影響 84
5.1.1. 簡介 84
5.1.2. 閘極電極對於有機薄膜電晶體特性的分析 84
5.2 微波通氮交聯PVP閘極絕緣層應用於不同基板上 87
5.2.1. 簡介 87
5.2.2. 實驗參數 88
5.2.3. 實驗結果與分析 89
第六章 結論與未來展望 93
6.1 結論 93
6.2 未來工作與展望 94
Reference 96

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