臺灣博碩士論文加值系統

本研究目的在於利用化學氣相沉積以低溫製程下分別在玻璃、藍寶石、n型氮化鎵磊晶板以及p型氮化鎵磊晶板成長低電阻率且具有光學散射特性之粗糙表面摻鎵氧化鋅薄膜，以期望取代氧化銦錫作為藍光發光二極體之透明導電接觸層。

XRD與UV量測結果顯示摻鎵氧化鋅薄膜鍍在玻璃基板上的繞射峰為（100）、（101）、（110），其中以（101）和（110）繞射峰對表面粗糙度的貢獻最大，霧度可以高達約13%。在與玻璃基板上相同的長膜條件下，摻鎵氧化鋅薄膜在c 軸指向的藍寶石基板和同為c 軸指向的n型氮化鎵磊晶基板上的成長結晶方向大都沿者六方晶c 軸方向成長，在XRD的量測並沒有觀察到（110）的結晶繞射峰。

我們於c 軸指向的p型的氮化鎵磊晶基板上預先成長氫化非晶氧化矽和氧化銦鎢兩種非晶緩衝層，之後成長GZO膜發現可以得到與在玻璃基材上相似的（100）、（101）、（110）XRD繞射峰晶相之結果，電子顯微鏡觀測薄膜表面亦保持原本的角錐狀結構以及對藍光460奈米光波的散射作用。

The film growth behavior of Ga-doped ZnO (GZO) prepared using low-pressure chemical vapor deposition (LPCVD) technique has been investigated. The crystal property of GZO films grown on various substrates including glass, c-plane sapphire, c-plane n-type GaN and p-type GaN was explored. Emphasis was placed upon preparing low resistivity GZO films with textured surface through crystallization control for enhancing light scattering.

First of all, GZO films grown on glass exhibited (100), (101), (110) diffraction patterns, which contribute to film surface roughness and correspond a diffusion transmittance of 13% at light wavelength of 460 nm. Nevertheless, GZO films grown on c-plane substrates showed only c-axis aligned crystal characteristics but no pyramidal (110) diffraction peak. Then, two kinds of buffer layers, one is hydrogenated amorphous silicon oxide and the other is amorphous indium tungsten oxide, were deposited before GZO-LPCVD. The results showed that with buffer layers, GZO films grown on c-plane substrates can exhibit similar crystal property with that on glass substrate.

摘要 i
Abstract ii
致謝 iii
目錄 iv
圖索引 vi
表索引 ix
第 1章 緒論 1
1.1前言 1
1.2背景與文獻介紹 5
1.3研究的目的與方向 11
第 2章 實驗方法與步驟 13
2.1實驗藥品與氣體 13
2.1.1 三乙基鎵 （Triethylgallium，TEGa） 13
2.1.2 二乙基鋅 （Diethylzinc ，DEZn) 13
2.1.3 去離子水 （Deionized water，DI water) 13
2.1.4 氬氣（Argon，Ar ） 14
2.1.5 丙酮 （Acetone，CH3COCH3） 14
2.1.6 乙醇 （ethanol，C2H5OH） 14
2.1.7玻璃（glass） 14
2.1.8 藍寶石基板 （sapphire substrate，Al2O3） 14
2.1.9 藍寶石n型氮化鎵磊晶片 15
2.1.10 藍寶石p型氮化鎵磊晶片 15
2.2 實驗裝置與步驟 16
2.2.1 實驗設備 16
2.2.2 實驗步驟 18
2.3 分析儀器 23
2.3.1 掃描式電子顯微鏡 （Scanning Electron Microscope，SEM） 23
2.3.2 霍爾量測儀 （Hall measurement） 23
2.3.3 X光繞射儀 （X-ray Diffraction，XRD） 27
2.3.4 X射線光電子能譜化學分析儀 （X-ray photoelectron Spectrometere，XPS） 28
2.3.5 紫外光、可見光光譜儀 （UV/VIS） 29
第 3章 結果與討論 32
3.1利用低壓化學氣相沉積法（low pressure CVD，LPCVD）成長GZO 32
3.1.1 LPCVD成長GZO薄膜在玻璃基板上的製程 32
3.1.2 改變GZO薄膜摻雜濃度 40
3.2 LPCVD在藍寶石基材上的製程 47
3.3 LPCVD在藍寶石n-型氮化鎵晶片上的製程 53
3.4 LPCVD在藍寶石p-型氮化鎵晶片上的製程 59
3.4.1實驗構想 59
第 4章 總結 64
第 5章 參考文獻 65

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