臺灣博碩士論文加值系統

提升切換頻率來降低磁性元件以及濾波元件的大小，藉此提升產品的功率密度已是產業的趨勢。但是以往受限於矽元件的特性，大幅限制了電路的切換頻率，近來氮化鎵元件的興起使得電路可以操作於更高的切換頻率。
以高降壓比LLC型串聯諧振式轉換器的整體損耗來說，磁性元件佔了大多數，且傳統的變壓器做工複雜，不易自動化。所以本文採用矩陣式變壓器，一二次側繞組只需4層的PCB即可達成。且採用磁通抵銷的概念來有效降低鐵心的磁滯損耗，並探討不同方式的繞線配置方式對電路的影響，最後採取整流元件以及輸出電容可以直接整合在二次側繞組上的方式。最後實作出一台切換頻率1 MHz，380 V輸入轉12 V 輸出的700 W，LLC型串聯諧振轉換器，且電路體積只有39.2 cm3。

Pushing switching frequency higher to reduce magnetic components size and output rectifiers is the trend. Gallium nitride power devices are set to take over as silicon power devices reach their limits. This new material allow circuit operating in higher frequency.
For high-step-down LLC-type series resonant converters, the transformer loss dominates the whole converter loss, thus, the transformer design is very important. The traditional transformer structure is difficultly adapted to an automatic manufacturing process. This thesis use matrix transformer and flux cancellation. Therefore, one magnetic core with four-layer PCB windings is adopted. Different secondary and primary windings structure is investigated in this thesis. Finally, synchronous rectifiers and output capacitors are integrated into secondary windings. A 1MHz 380 V/12 V 700 W LLC-type series resonant converter with volume 39.2 cm3 is built to verify the proposed structure.

摘　要 i
Abstract ii
誌　謝 iii
目　錄 iv
圖索引 vi
表索引 ix
第一章 緒論 1
1.1研究動機與目的 1
1.2內文編排方式 4
第二章 氮化鎵元件介紹與選用 5
2.1氮化鎵電晶體特性與結構 5
2.1.1氮化鎵電晶體特性 6
2.1.2氮化鎵電晶體結構 7
2.2雙脈波元件測試與選用 10
第三章 整合式矩陣變壓器結構分析與設計 16
3.1傳統串聯諧振變壓器結構 16
3.2改善傳統串聯諧振變壓器 23
3.2.1改善傳統串聯諧振變壓器之線圈 23
3.2.2改善傳統串聯諧振變壓器之二次側結構 25
3.3矩陣式變壓器 27
3.3.1矩陣式變壓器演進 28
3.3.2矩陣式變壓器鐵心整合 33
3.4新式矩陣變壓器 40
3.4.1新式矩陣變壓器鐵心整合 40
3.4.2新式矩陣變壓器鐵心優化 44
第四章 半橋串聯諧振式參數分析與設計 47
4.1變壓器設計 47
4.2諧振槽與死域區間設計 52
第五章 電路實作與結果 64
5.1實測波形 65
5.2實測數據以及實測電路 67
第六章 結論與未來展望 70
6.1結論 70
6.2未來展望 71
參考文獻 72

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