臺灣博碩士論文加值系統

許多合成奈米材料的溶液系統中，定向附著成長機制已經被發現，然而，這樣的生長機制尚未在氣相沉積二維奈米材料系統中被探討。此研究中，利用硫與錫粉末成長二硫化錫奈米薄片，自不同的生長階段焠火以探討其生長機制。結果發現，最初的階段殘餘的氧氣首先與錫反應產生了寬約10微米的六方型片狀二氧化錫多晶薄片，並決定了成長後的形狀。隨著置於爐中的成長時間增加，二氧化錫薄片中硫化的比例也隨之提高，藉由高倍率穿透式電子顯微鏡觀察不同硫化階段，發現二氧化錫與二硫化錫的晶格分別存在於單一個薄片中，表示錫、氧與硫三者並非固溶關係而是以混合物的形式共存於薄片中。此外，也利用快速傅立葉轉換配合選區電子繞射發現了在高度硫化的階段中大量的二氧化錫對著[001]晶軸轉以(110)的面向，並與二硫化錫的[001]晶軸及(100)面具有磊晶關係，進一步證實了生長機制為定向附著生長。為了觀察實驗參數對薄片成長的影響，分別調整前驅物的粉末量與生長材料的試片位置，並觀察到不一樣的薄片表面型態。其中，螺旋成長在過量的前驅物下被觀察到並證實了文獻中定向附著生長會產生螺旋差排並誘發螺旋成長的描述。

The oriented attachment (OA) of aggregated molecular clusters and nanoparticles have been discovered in solutions for many nanomaterials. However, it has not been reported in vapor phase deposition system. We quenched a series of products by co-evaporation of tin and sulfur in the growth stages and found tin dioxide was first formed polycrystalline of hexagonal nanoflakes with lateral size of 10 μm. After extending the time of furnace cooling, the sulfur content in nanoflakes were increasing until the tin dioxide nanoflakes were totally transformed into single crystalline SnS2. We performed high-resolution transmission electron microscope and found SnO2-rich and SnS2-rich areas coexisted in the intermediate stage which proved the SnO2 is directly transformed into SnS2 instead of non-stoichiometry compound. Fast Fourier transform (FFT) and selected area electron diffraction (SAED) patterns also helped to confirm the OA mechanism with the epitaxial relationship of (110)SnO2//(100)SnS2 and [001]SnO2//[001]SnS2. Moreover, the growth modes was also probed by adjusting amount of source and locations of substrate in synthesis procedures. The observed spiral growth agreed with the existence of screw dislocations which induced from OA mechanism.

Chapter 1: Introduction 1
1.1 The Fever of Two-Dimensional Semiconductors
1.2 Synthesis of 2D Alloys
1.2.1 Mechanical Exfoliation
1.2.2 Solvothermal Method
1.2.3 Vapor Phase Deposition
1.3 Characteristics of Layered SnS2
1.3.1 Structure of SnS2
1.3.2 Phase Stability of Tin Sulfides
1.3.3 Electrical Properties of SnS2
1.4 Research Motivation

Chapter 2: Experimental Section
2.1 Synthesis of SnS2 Nanoflakes
2.1.1 Preparation and Precursors
2.1.2 Furnace Setup
2.2 Characterizations
2.2.1 Scanning Electron Microscope
2.2.2 Transmission Electron Microscope
2.2.3 Energy Dispersion Spectrometer
2.2.4 X-ray Diffractometer
2.2.5 Raman Spectrum
2.3 Electrical Properties Measurement

Chapter 3: Results and Discussions
3.1 Morphology and Influence Condition of SnS2 Nanoflakes Growth
3.1.1 Out-of-plane Growth of SnS2 Nanoflakes
3.1.2 In-plane Growth of SnS2 Nanoflakes
3.1.3 Overgrowth of SnS2 Nanoflakes
3.2 Characterization of SnS2 Nanoflakes
3.2.1 Raman Spectrum
3.2.2 XRD Analysis
3.2.3 TEM Analysis
3.3 Growth Mechanism of SnS2 Nanoflakes
3.3.1 SEM Observation
3.3.2 XRD Analysis
3.3.3 TEM Analysis
3.3.4 Summary of Growth Mechanism
3.4 Electrical Properties Measurement of SnS2 Nanoflakes
Chapter 4: Summary and Conclusions
Chapter 5: Future Works
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