臺灣博碩士論文加值系統

氧化鋅為Ⅱ-Ⅵ族化合物半導體，具有直接能隙的能帶結構，能隙的大小為3.37 eV，所對應的波長範圍在紫外光區段，並具有高達60 meV的激子束縛能。此外，由於ZnO具有高透光率以及低電阻率的特性。因此ZnO被認為是非常重要且具有未來性的光電材料。本研究以濺鍍法於ITO玻璃基板沉積氧化鋅薄膜，利用水熱法生長其一維型式的氧化鋅奈米柱結構。在物理性能的氧化鋅奈米柱的光學特性的實驗條件影響將以X射線繞射(XRD)，掃描電子顯微鏡(FE-SEM)，成分分析(energy-dispersive spectrometry : EDS)，分析其一維型式奈米柱的品質。以ITO玻璃基板生長氧化鋅奈米柱，之後製作上電極，與前者奈米結構組裝成奈米發電機，利用超聲波驅動其奈米發電機，在氧化鋅奈米柱成長6小時得到平均電流3.46×10-6A與平均電壓5.63×10-2V，而使用蝕刻電極去增加接觸面積也得到良好的電壓－電流特性。

Zinc oxide is a II-VI semiconductor material with direct band-gap of 3.37eV corresponding to the wavelength in the ultraviolet region and it also has large exction binding energy (~60 meV). In addition, ZnO has the characteristic of low resistivity and high transparency, therefore, it is considered as a promising material for the application of the optoelectronics. In this study, ZnO film is deposited by sputter on ITO glass substrate, and ZnO nanorods nanostructure are grown by hydrothermal. One dimensional type of nanostructure was analysed physical properties of ZnO nanorods optical properties by XRD, FE-SEM, EDS. ZnO nanorods are grown on ITO glass, then fabricate naogeneratator by making top electrode. Nanogenerator are driven by ultrasonic waves. ZnO nanorods are grown 6 hours and measured its voltage and current. The average current and average voltage are 3.46×10-6A and 5.63×10-2V respectively. The use of an etching electrode to increase the contact area also results in good voltage-current characteristics.

摘要...................................i
Abstract...............................ii
誌謝...................................iii
目錄...................................iv
表目錄..................................vi
圖目錄..................................vii
第一章 緒論...........................1
1.1前言................................1
1.2研究動機............................2
第二章 文獻探討.......................3
2.1氧化鋅奈米結構介紹...................3
2.2壓電效應............................4
2.2.1壓電效應的起因.....................4
2.2.2壓電現象的分類....................4
2.2.3壓電材料–氧化鋅奈米線..............6
2.3金屬半導體接觸理論...................8
2.4薄膜沉積原理........................11
2.5反應式射頻磁控濺鍍原理...............12
2.6液相沉積法成長奈米結構...............15
第三章 實驗步驟.......................17
3.1實驗架構............................17
3.1.1實驗藥品..........................18
3.1.2實驗儀器..........................19
3.2製作奈米發電機.......................20
3.2.1清洗基板..........................20
3.2.2氧化鋅薄膜製作.....................20
3.2.3奈米柱實驗反應流程..................21
3.2.4製作蝕刻電極.......................22
3.2.5組裝氧化鋅奈米發電..................23
3.3氧化鋅分析...........................25
3.3.1場發射電子顯微鏡(FE-SEM, JEOL JSM-6700F............25
3.3.2成份分析(Energy-Dispersive Spectrometry, EDS)......25
3.3.3X光繞射儀(X-Ray Diffractometer, XRD)............25
第四章 實驗結果與討論..........................27
4.1氧化鋅薄膜與氧化鋅奈米柱材料分析...........27
4.2氧化鋅奈米柱的表面結構與光學分析...............28
4.2.1場發射電子顯微鏡表面結構分析................28
4.2.1.1不同時間生長氧化鋅奈米柱.....................28
4.2.2X光繞射結構分析(XRD)............................34
4.2.3能量分散光譜分析(EDS).........................35
4.3製備壓電式奈米發電機與電流–電壓量測.............36
4.3.1氧化鋅晶種層製作奈米發電機之特性分析..............36
4.3.2氧化鋅奈米柱製作奈米發電機之特性分析...........36
4.3.3蝕刻電極製作奈米發電機之特性分析...............37
第五章 結論與未來展望.......................46
5.1結論....................................46
5.2未來展望…..............................46
參考文獻 ...........................................47
Extended Abstract...............................50
簡歷...........................................54

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