臺灣博碩士論文加值系統

本研究探討一種非接觸式電流量測系統架構，將偵測直流與低頻電流的磁通閘與偵測高頻的比流器作結合，使磁通閘與比流器的性能互補，結合出高頻寬電流感測裝置，頻寬範圍為直流至100 kHz。比流器線圈由肥粒鐵(ferrite)纏繞漆包銅線組成，磁通閘則以高導磁合金(Mu-metal)薄膜為磁芯，再纏繞漆包銅線構成感應與激發線圈。磁芯薄膜係利用磁控濺鍍技術使高導磁合金材料沉積於雷射切割成形的矽晶圓表面。磁通閘可偵測100 Hz以下低頻磁場，而比流器可偵測100 Hz以上高頻磁場，利用濾波與加法電路將兩者整合，即構成可偵測直流至100 kHz之電流感測器，其靈敏度為19.6 mV/A，1 Hz雜訊為45.3 mA/√Hz。研究成果可應用各式交直流電流偵測，例如漏電流偵測與變頻控制器。

In this study, a non-contact current measurement system architecture has been proposed to combine the low-frequency fluxgate with the high-frequency current transformer (CT). It is capable of non-contact current measurement from DC to 100 kHz. The core of CT consists of a ring ferrite core and copper wires. The ring-shaped wire wound fluxgate has double magnetic cores. The fluxgate cores were made of high permeability mu-metal films. The wire-wound coils included search coil and excitation coil. The magnetic film was deposited by magnetron sputtering on the silicon wafer with a through-hole formed by laser cutting. Fluxgate could detect the low frequency magnetic field below 100 Hz, and the CT can detect high frequency magnetic field above 100 Hz. The two sensors were integrated by the filter and summing amplifier circuits to achieve the flat bandwidth from DC to 100 kHz. The sensitivity is 19.6 mV/A, and the resolution is 45.3 mA/√Hz at 1 Hz noise. The current sensor can be applied to various types of AC and DC current detection, such as leakage current detection and variable-frequency drive.

摘要.............................................I
ABSTRACT........................................II
誌謝...........................................III
目錄............................................IV
圖目錄...........................................VI
表目錄.........................................VIII
第一章 緒論.......................................1
1.1研究背景.......................................1
1.2研究動機與目的.................................2
1.3各種電流感測技術概述............................3
1.3.1 分流電阻....................................3
1.3.2 比流器......................................4
1.3.3 羅哥斯基線圈................................5
1.3.4 霍爾效應(Hall current sensor)...............6
1.3.5 巨磁阻(Giant Magnetoresistance, GMR)電流感測器...............................................7
1.3.6 磁通閘(fluxgate)電流感測器..................8
1.3.7 各感測器性能比較...........................10
1.4論文架構......................................10
第二章 原理......................................11
2.1電流與磁場....................................11
2.2磁通密度......................................13
2.3磁化強度和磁矩................................14
2.4磁性材料......................................14
2.4.1強磁性(鐵磁性和亞鐵磁性).....................15
2.4.2弱磁性(順磁性和反鐵磁性).....................16
2.4.3反磁性......................................17
2.5磁滯曲線......................................18
2.6磁通閘磁芯材料選擇.............................19
2.7磁控濺鍍......................................20
2.8磁通閘原理....................................21
2.9比流器原理....................................23
第三章 實驗方法..................................24
3.1實驗流程......................................24
3.1比流器製作....................................25
3.2磁通閘製作....................................26
3.2.1 Mu-metal磁芯..............................26
3.2.2 Mu-metal磁芯磁通閘.........................28
3.2.3 Metglas磁芯磁通閘..........................29
3.3均勻磁場亥姆霍茲線圈...........................30
3.4量測方法......................................35
3.4.1磁通閘量測..................................35
3.4.2比流器量測..................................36
3.4.3混合比流器與磁通閘之高頻寬電流感測器量測.......37
3.4.4雜訊量測....................................38
第四章 結果與討論................................39
4.1磁通閘激發條件與靈敏度之關係....................39
4.1.1 mu-metal磁芯磁通閘.........................39
4.1.2 Metglas磁芯磁通閘..........................44
4.2線性範圍......................................45
4.3頻率響應結果..................................46
4.3.1 磁通閘頻率響應.............................46
4.3.2 比流器頻率響應.............................48
4.3.3 結合比流器與磁通閘之頻率響應.................50
4.4雜訊.........................................53
第五章 結論......................................55
5.1結論.........................................55
5.2未來展望......................................56
參考文獻.........................................57

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