臺灣博碩士論文加值系統

碳化矽強化之鋁基複合材料(Al/SiC)具有其高比強度、高熱傳率及低熱膨脹係數，應用十分廣泛，但作為高功率電子元件之散熱基板時，常有與矽元件熱膨脹係數不匹配而發生剝離之問題。本研究採用數種不同SiC粒徑組合之單峰、雙峰及三峰粒度法製備生胚，並以高溫固相燒結法(2100°C)製備SiC燒結體，之後對不同粒度組合之燒結胚體，以擠壓鑄造法滲入A356鋁湯製作Al/SiC複合材料。
實驗結果顯示，數種不同SiC生胚粒度組合中，三峰粒度組合所獲致之SiC生胚密度優於雙峰粒度及單峰粒度者。而不同粒度組合之SiC燒結體中，單峰粒度組合出現異常晶粒成長現象，並轉化為粗大板狀之晶粒；雙峰粒度組合呈現近似立體網絡狀之晶粒連結體；三峰粒度組合之燒結體可觀察到分散之大顆粒與中、小顆粒燒結轉化之網絡狀連結體，整體來說，三峰粒度組合之SiC燒結體有最佳之體密度。
而對三峰粒度而言，小顆粒SiC粉末之粒徑對燒結緻密化有重大影響，當小顆粒粒徑為2 μm時，燒結難以產生緻密化，燒結體之體密度不高，製作Al/SiC複材時鋁湯雖可順利滲入胚體，但複材之熱性質與機械性質皆不理想。當小顆粒SiC粒徑下降至0.5 μm時，其緻密化效果相當明顯，最高燒結密度達80.5% (d = 2.58 g/cm3)，燒結體之抗折強度達81.8 MPa，但閉孔隙率約為10%，以致鋁合金溶液難以滲入SiC燒結體內，無法製作緻密之Al/SiC複合材料。
本研究最後選用1.2 μm小顆粒之三峰粒度組合No.11 (57 μm : 9.5 μm : 1.2 μm = 60 : 40 : 10)來進行SiC燒結與製備Al/SiC複合材料，SEM微觀組織及體密度分析顯示，其有較明顯之緻密化現象，其體密度達73.8% (d = 2.37 g/cm3 )，製作Al/SiC複合材料時其抗折強度達356 MPa，皆優於前十個粒度組合，而其TC與CTE分別為133.9 W/mK(優於前十個粒度組合)與7.6 ppm/K(介於前八個與後兩個粒度組合)。


 

Silicon carbide-reinforced aluminum composite (Al/SiC) was widely used because of its high specific strength, high thermal conductivity and low coefficient of thermal expansion. Since the thermal expansion coefficient of Si substrate differs from its heat sink material Al/SiC composites, delamination of Si device from the Al/SiC baseplate may take place and cause failure of high power device. In this study, SiC sintered by solid-state sintering at high temperature(2100°C) with monomodal, bi-modal and tri-modal distribution of SiC particles. The sintered body was infiltrated with aluminum alloy A356 by squeeze casting to form Al/SiC composite.
The results showed that, the density of SiC green compact with tri-modal distribution was the highest. In sintered SiC, monomodal distribution caused abnormal grain growth and formed plate-like SiC, bi-modal and ti-modal distribution caused less abnormal grain growth of SiC. The density of sintered SiC with tri-modal particle size distribution was the highest.
For samples with tri-modal distribution, the small particles of SiC powder had great influence on densification. When the particle size was 2 μm, the densification was difficult, and the bulk density of the sintered body was not high and the thermal properties and mechanical properties were low. When the particle size of small particles decreased to 0.5 μm, the densification effect was obvious, the highest sintering density was 80.5% (d = 2.58 g/cm3), the flexural strength of the sintered body was 81.8 MPa, but the closed porosity was about 10%. In these samples, the aluminum alloy melt was difficult to penetrate into the SiC sintered body and to produce dense Al/SiC composite.
Finally, we chose powder with 1.2 μm particle size to prepare sintered SiC and Al/SiC composites. The results showed that it could be densified and the bulk density was 73.8% (d = 2.37 g/cm3). The flexural strength of Al/SiC composites was 356 MPa which was the best of all. Its TC and CTE were 133.9 W/mK and 7.6 ppm/K.

中文摘要 i
英文摘要 iii
目錄 v
表目錄 ix
圖目錄 xi

第一章 導論 1
1.1 研究背景與動機 1
1.2 研究目的與方法概述 2
第二章 文獻回顧 3
2.1 碳化矽簡介 3
2.2燒結的基本原理 4
2.2.1 燒結機構 4
2.2.2 緻密化 6
2.2.3 燒結助劑(B4C) 8
2.2.4 異常晶粒成長 9
2.3 鋁合金簡介 9
2.4 Al/SiC複合材料 11
2.4.1 金屬/陶瓷複合材料簡介 11
2.4.2 Al/SiC 複合材料 13
2.5 擠壓鑄造法原理與特色 14
2.6 金屬/陶瓷界面潤濕性 15
2.7 鋁及碳化矽間界面反應 17
2.8 熱傳導機制與理論計算 19
2.8.1 複材熱傳導率模型 20
2.8.2 複材熱膨脹係數模型 21
第三章　實驗步驟 23
3.1實驗設計 23
3.2鋁合金 23
3.3高SiC體積分率之胚體製備 24
3.3.1 SiC生胚密度分析 24
3.3.2 SiC燒結體密度與晶體結構分析 25
3.4 Al/SiC複合材料製備 26
3.5 性質量測 26
3.5.1 複材中各相體積分率及緻密度推算 26
3.5.2 阿基米得法測複合材料之密度及開孔隙率 27
3.5.3 水銀孔隙分析法 28
3.5.4 金相分析 29
3.5.5 熱傳導率測試 29
3.5.6 熱膨脹係數測試 30
3.5.7 三點抗折測試 31
第四章　結果與討論 32
4.1 SiC生胚分析 32
4.1.1 不同粒度組合之生胚密度分析 32
4.2不同粒度組合之SiC燒結體之特性 33
4.2.1 SiC燒結體密度分析 33
4.2.2 SiC燒結體之微觀組織 35
4.2.3 SiC燒結體之晶體結構分析 37
4.2.4 SiC機械性質分析 38
4.2.5 SiC燒結體水銀孔隙分析 38
4.3 SiC燒結助劑探討 39
4.3.1有無添加燒結助劑B4C對SiC燒結體密度之影響 39
4.3.2有無添加燒結助劑之SiC胚體之微觀組織比較 40
4.3.3 有無添加燒結助劑之SiC胚體之機械性質比較 41
4.4 燒結時間對SiC胚體特性之影響 41
4.4.1 燒結時間對SiC胚體密度之影響 41
4.5 CIP對生胚密度之影響 42
4.5.1 CIP前後之SiC生胚密度 42
4.5.2 CIP對SiC燒結體密度之影響 42
4.6 Al/SiC複合材料性質 43
4.6.1 不同粒度組合之Al/SiC複合材料之微觀組織 43
4.6.2 Al/SiC複合材料之抗折強度 44
4.6.3 Al/SiC複合材料熱性質分析 45
4.7 小顆粒SiC之最佳化效果分析 46
4.7.1 最小粒徑為0.5 μm SiC燒結體之微觀組織 46
4.7.2 不同小顆粒粒徑之SiC燒結胚體及其AlSiC複材性質比較 47
第五章 結論 49
參考文獻 52

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