臺灣博碩士論文加值系統

　　奈米銀線應用於透明導電膜時需考慮許多因素，舉凡長度、線徑、塗佈方式、退火或基材表面性質都會影響銀線排列。本研究主要探討為銀線退火效應與基材表面性質對銀線薄膜的電學與光學性質影響與機制。探討退火效應時，先將奈米銀線製成薄膜後，之後進行不同溫度退火處理；基材性質效應則是先將玻璃基板進行不同程度親疏水改質，然後將奈米銀線沉積於基板之上觀察其分布情況。這些實驗分別利用四點探針量測電學性值、光譜儀量測透光率及掃描式電子顯微鏡觀察薄膜表面性質，藉以探討退火及表面改質對電學及光學性質影響。
　　研究結果顯示，奈米銀線薄膜進行不同溫度熱退火處理，能有效降低片電阻率。其機制為生產奈米銀線過程中所殘留的PVP活性劑附著在奈米銀線表面，當退火溫度100℃時，伴隨著PVP活性劑的揮發，使得奈米銀線的接點貼合造成片電阻初步下降，當退火溫度在150℃至200℃時，奈米銀線開始融解使得大部分接點融合在一起，此時具有更低片電阻。然而當退火溫度在250℃至300℃時，奈米銀線由於溫度過高而開始大量的斷裂且球化，使得銀線之間無法產生連接，因此失去電學性質。不同退火溫度對光學性質影響不大，不同退火溫度的透光率其差異低於5%，然而其電學性質卻最高則能提升77%。
　　另一方面，使用不同電漿改質會改變基材表面親疏水性，改變沉積時奈米銀線的排列進而影響到電學與光學性質。當奈米銀線沉積於疏水性基板時，容易產生叢聚現象，反之當其沉積於親水性基板則分佈較均勻。此種分佈的均勻性連帶影響奈米銀線薄膜的電學性質；當銀線叢聚在疏水基板，其電學性質呈現劣化現象，反之在親水性基板由於均勻分佈，其電學呈現改善現象。此外，叢聚現象與銀線的尺寸有很大的關係，當奈米銀線的線徑愈大時，愈容易產生叢聚的現象，進而影響其相關性質。

Many factors affect the performance of silver nanowires (AgNWs) as transparent conductive films e.g. wire length, diameter, deposition, annealing and substrate wettability. In this study, we investigate the effects of annealing and substrate wettability on AgNW films and the associated mechanisms. In annealing effect, the different diameter size AgNWs were drop-casting on glass substrate and then on a hot plate at various temperature as annealing. In substrate wettability, the glass was under different plasma treatment to modify its wettability. The electrical, optical and surface properties in AgNW films were examined by 4 point probe, spectrometer and SEM, respectively.
The results indicate for annealing under certain temperature, the electrical properties are improved as long as the temperature is less than 200 degree C. The annealing mechanism in different in various temperature range. For annealing temperature 100 degree C, the evaporation of residual PVP particles leads to the reduction of resistivity. As the annealing temperature raised to 150-200 degree C, the fusion of inter-connection between AgNWs results in further improvement of conductivity. When the annealing temperature is 250-300 degree C, the AgNWs become spheroidization and the networks between AgNWs disappear and the conductivity of AgNWs breaks down. Different annealing temperature seems to be insensitive to optical properties and the variation is less than 5%. On the other hand, the electrical conductivity can be improved up to 77%.
The wettability of substrate surface can be modified by different plasma treatment. The results show when AgNWs deposited on hydrophobic substrate surface, AgNWs tends to aggregate. On the other hand, there is more dispersion when AgNWs deposited on hydrophilic substrate surface. This distribution of AgNWs influence the associated electrical property. The conductivity of AgNW films became worse when AgNWs deposited on hydrophobic surface. The aggregation of AgNWs reduces the number of junction might be the reason. However, the more dispersive AgNWs on hydrophilic surface improves the conductivity by increasing the network interconnectivity. The large diameter AgNWs tends to form aggregation and this explain why smaller AgNWs has better conductivity.

謝誌 i
摘要 ii
ABSTRACT iv
目錄 vi
圖目錄 ix
表目錄 xv
第一章 序論 1
1.1 前言 1
1.2 研究動機 4
1.3 文獻探討 5
第二章 實驗原理 12
2.1 熱處理原理 12
2.2 電漿改質原理 13
2.2.1 氧氣電漿改質 14
2.2.2 HMDSZ電漿改質 15
2.3 接觸角與表面能原理 16
2.3.1 接觸角原理 16
2.3.2 表面能計算 17
第三章 研究方法 19
3.1 奈米銀線薄膜製作 19
3.2 熱退火實驗 20
3.3 電漿改質實驗 21
3.3.1 氧氣電漿改質 21
3.3.2 HMDSZ電漿改質 22
3.4電學性質量測 23
3.5光學性質量測 24
3.6表面性質量測 25
3.7 實驗流程與架構 26
第四章 結果討論 28
4.1 奈米銀線薄膜在不同退火溫度下的熱處理 28
4.1.1 奈米銀線薄膜誤差探討 28
4.1.2 熱退火溫度穩定度 29
4.1.3 奈米銀線薄膜在不同退火溫度下的電學性質 31
4.1.4 奈米銀線薄膜在不同退火溫度下的光學性質 34
4.1.5 奈米銀線薄膜在不同退火溫度下的表面性質 40
4.1.5.1 FESEM 40
4.1.5.2 AFM 48
4.1.6 奈米銀線薄膜在不同退火溫度下的元素分析 54
4.2 電漿改質對奈米銀線薄膜的影響 58
4.2.1 電漿改質下水接觸角與表面能探討 59
4.2.2 電漿改質後奈米銀線薄膜的電學性質 61
4.2.3 電漿改質後奈米銀線薄膜的光學性質 65
4.2.4 電漿改質後奈米銀線薄膜的表面性質 70
第五章 結論與未來展望 77
5.1 結論 77
5.1.1 退火對奈米銀線薄膜影響 77
5.1.2 表面改質對奈米銀線薄膜影響 78
5.2 未來展望 79
參考文獻 80

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