臺灣博碩士論文加值系統

化學當量比狀態下的氧化鎳為絕緣體，但氧化鎳會受到鎳缺陷或氧間隙的影響改變其電性及光學性。本論文研究的主要目的為利用反應式離子蝕刻、電漿輔助化學氣相沉積對氧化鎳薄膜用氧電漿進行微氧化，並用黃光設備定義出汲極和源極後，製作出氧化鎳薄膜電晶體。文中探討了利用霍爾量測氧化鎳薄膜的載子濃度和電阻率，並利用紫外線紅外線光譜儀量測氧化鎳薄膜的穿透度，並用KEITHLEY-4200半導體量測來分析各種不同的電漿功率、不同的氣體流量的氧電漿對氧化鎳薄膜電晶體的影響。

Chemical equivalent ratio of nickel oxide under the state of the insulator, But nickel oxide will be affected by nickel defects or oxygen gap to change its electrical and optical properties. The main purpose of this paper is to oxidize the oxygen plasma of the nickel oxide thin film by using reactive ion etching and plasma assisted chemical vapor deposition, And the use of yellow equipment to define the drain and the source, the production of nickel oxide film transistor. In this paper, the carrier concentration and resistivity of the nickel oxide film were measured by Hall, And the penetration of nickel oxide thin film was measured by ultraviolet ray spectrometer, And the KEITHLEY-4200 semiconductor measurement was used to analyze the effects of different plasma power and oxygen flow rates on the nickel oxide
thin film transistors.

Chapter 1 1
Introduction 1
1.1 Preface 1
1.2 Research motives 3
1.3 Paper structure 4
Chapter 2 5
Basic theory 5
2.1 Principle of Thin Film Transistor Elements 5
2.1.1 Ideal for MOS components and features 5
2.1.2 Actual condition MOS element 7
2.1.3 Introduction to Thin Film Transistors 7
2.1.3.1 TFT four structures 8
2.1.4 The operating characteristics of the transistor 9
2.1.5 Other important component parameters and characteristics 13
2.1.6 The main type of transistor 14
2.1.7 The working principle of thin film transistor 15
2.2 PN component principle 16
2.3 Positive and negative bias 18
2.4 Series resistance (RS) 20
2.5 Nickel oxide carrier conduction mechanism 22
2.6 Penetration measurement calculates the energy gap 24
Chapter 3 26
Experimental design 26
3.1 Thin Film Transistor Experimental Flow 26
3.2 Experimental flow chart 31
3.3 Laboratory apparatus 33
Chapter 4 37
Results and discussion 37
4.1 Active film analysis 37
4.1.4 Analysis of Penetration of Active Layer 43
4.1.5 Energy gap analysis of active layer 46
4.1.6 Analysis of XRD Measurement of Active Layer 51
4.1.7 Oxygen plasma oxidation treatment 54
4.1.8 XPS Measurement of Active Layer 55
4.2 Analysis of TFT component characteristics 60
4.3 Analysis of Characteristics of Diode Element 62
Chapter 5 64
Conclusion 64
References 66

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