參考文獻
[1] Lester F. Eastman and U.K. Mishra, “The toughest transistor yet GaN transistors,” IEEE Spectrum, vol. 39, pp. 28-33, May 2002.
[2] Jane J. Xu, Stacia Keller, Gia Parish, Sten Heikman, Umesh K. Mishra, and Robert A.York, “A 3–10-GHz GaN-Based Flip-Chip Integrated Broad-Band Power Amplifier, ”IEEE Transactions on Microwave Theory and Techniques, vol. 48, pp. 3573-2578, 2000.
[3] 余湘璘,2009,氮化鋁鎵/氮化鎵高電子遷移率場效電晶體元件結構與鈍化方式對高頻率及高功率之特性分析,國立中央大學,碩士論文。
[4] Wenli Fu, Yuehang Xu, Bo Yan, Bin Zhang, Ruimin Xu, ”Numerical simulation of local
doped barrier layer AlGaN/GaN HEMTs, ” Superlattices and Microstructures vol. 60, pp.
443-452, 2013.
[5] M Golio, RF and microwave semiconductor device handbook, CRC Press LLC, pp. 8-22,
2003.
[6] Stephen Sque, “High-voltage GaN-HEMT devices, simulation and modelling, ” Semiconductors ESSDERC Bucharest, Romania 16th ,Sep 2013.
[7] R. Quay, R. Hull, R.M. Osgood, J. Parisi, H.Warlimont (ed); Springer-Verlag, Berlin-Heidelberg, "Gallium Nitride Electronics, "(2008), ISBN: 978-3-540-71890-1.
[8] O Ambacher,B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, Sierakowski, W. J. Schaff, and L. F. Eastman,”Two dimensional electron gases induced by spontaneous and piezoelectricpolarization in undoped and doped AlGaN/GaN heterostructures, ” Journal of applied physics, vol. 87, No. 1, pp.334-344, Jan.2000.
[9] 徐至鴻,2012,閘極掘入式增強型氮化鋁鎵/氮化鎵功率場效電晶體之研製,國立中央大學,碩士論文。[10] O. Ambacher,B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K.Chu, M.Murphy, A. J. Sierakowski, W. J. Schaff, and L. F. Eastman, ”Two-dimensionalelectron gases induced by spontaneous and piezoelectricpolarization charges in N-and Ga-face AlGaN/GaN heterostructures, ”Journal of applied physics, vol. 85, no. 6, pp. 3222-3233, Mar. 1999.
[11] Rashmi, AbhinavKranti, S. Haldar, R.S. Gupta,”An accurate charge control model for spontaneousand piezoelectric polarization dependent two-dimensionalelectron gas sheet charge density of lattice-mismatchedAlGaN/GaN HEMTs, ”Journal Solid-State Electronics, vol. 46, no. 5, pp. 621-630, May. 2002.
[12] S. R. Lee, D. D. Koleske, K. C. Cross, J. A. Floro, and K. E. Waldrip, “In situ
measurements of the critical thickness for strain relaxation in AlGaN/GaN
heterostructures,” Journal of applied physics, Vol. 85, No. 25, pp. 6164-6166, Dec.2004.
[13] Gang Xie1, Bo Zhang, Fred Y. Fu, W.T.Ng, ”Breakdown Voltage Enhancement for GaN High Electron Mobility Transistors, “Proceedings of The 22nd International Symposium on Power Semiconductor Devices & ICs, Hiroshima , pp. 237-240, June 2010.
[14] Zhifang Fan, Changzhi Lu, A.E. Botchkarev, H. Tang, A. Salvador, 0. Aktas, W. Kim and H. Morkoq,” AIGaN/GaN double heterostructure channel modulation doped field effect transistors (MODFETs), ” Electronics Letters 24th ,vol. 33 ,no. 9 , April 1997.
[15] A. Kamath, T. Patil, R. Adari, I. Bhattacharya, S. Ganguly, R. W. Aldhaheri, M. A.
Hussain, Dipankar Saha, “Double-Channel AlGaN/GaN High Electron Mobility
Transistor with Back Barriers,” IEEE Electron Device Letters, Vol. 33, No. 33, pp.
1690-1692, Dec. 2012.
[16] R. Gaska, M. S. Shur, T. A. Fjeldly, and A. D. Bykhovski, “Two-channel
AlGaN-GaN heterostructure field-effect transistors for high power applications ”,
J.Appl. Phys., vol. 85, no. 5, pp. 3009–3011, Mar. 1999.
[17] R. Chu, Y. Zhou, J. Liu, D. Wang, K. J. Chen, “AlGaN-GaN Double-Channel
HEMTs,” IEEE Transaction on Electron Device, vol. 52, no. 4, pp.438-446, Apr.
2005.
[18] Yueh-Chin Lin, Edward Yi Chang, Hiroshi Yamaguchi, Wei-Cheng Wu, and
Chun-Yen Chang, “A δ-Doped InGaP/InGaAs pHEMT With Different Doping
Profiles for Device-Linearity Improvement,” IEEE Trans. on Electron Devices,
Vol.54, No. 7, pp. 1617-1625, Jul. 2007.
[19] S. Boulay, S. Touati, A. Sar, V. Hoel, C. Gaquiere, J. C. De Jacger, S. Joblot, Y.
Cordier, F. Semond, and J. Massies, “AlGaN/GaN HEMTs on (001) oriented
silicon substrate based on 100nm SiN recessed gate technology for low cost device
fabrication,” Proceedings of the 2nd European Microwave Integrated Circuits
Conference, Oct. 2007.
[20] Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, and Ichiro
Omura, “Recessed-Gate Structure Approach Toward Normally-Off High-Voltage
AlGaN/GaN HEMT for Power Electronics Applications,” IEEE Transactions on
Electron Devices, vol. 53, no. 2, pp. 356-362, Feb. 2006.
[21] Ting-Hsiang Hung, Pil Sung Park, Sriram Krishnamoorthy, Digbijoy N. Nath, and
MISHEMTs,” IEEE Electron Device, vol. 35, no. 3, pp. 312-314, Mar. 2014.
[22] S. Jia, Y. Cai, D. Wang, B. Zhang, K. M. Lau, and K. J. Chen,“Enhancement-Mode
AlGaN/GaN HEMTs on Silicon Substrate,” IEEE Trans. Electron Devices, vol. 53,
pp. 1474-1477, June 2006.
[23] Y. Cai, Y. Zhou, K. M. Lau, and K. J. Chen, “Control of threshold voltage of
AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to
enhancement mode,” IEEE Trans. Electron Devices, vol. 53, no. 9, pp. 2207-2215,
Sep. 2006.
[24] Hongwei Chen, Maojun Wang, Kevin J. Chen, “Enhancement-mode AlGaN/GaN
HEMTs Fabricated by Standard Fluorine Ion Implantation,” CS MANTECH
Conference, May 17th-20th, 2010.
[25] S. Martín-Horcajo, M. J. Tadjer, M. F. Romero, R. Cuerdo, F. Calle, “Fabrication
and characterization at high temperature of AlGaN/GaN enhancement-mode
HEMTs,” Proceedings of the 8th Spanish Conference on Electron Devices
(CDE’2011), Feb. 2011.
[26] Dong Seup Lee, Xiang Gao, Shiping Guo, and Tomás Palacios, “InAlN/GaN
HEMTs with AlGaN Back Barriers,” IEEE Electron Device Letters, vol. 32, no. 5,
May 2011.
[27] E. Bahat-Treidel, O. Hilt, F. Brunner, J. Wurfl, and G. Trankle,
“Punchthrough-voltage enhancement of AlGaN/GaN HEMTs using AlGaN
Double - heterojunction confinement,” IEEE Trans. Electron Devices, vol. 55, no.
[28] D. Visalli, M. Van Hove, J. Derluyn, S. Degroote, M. Leys, K. Cheng, M. Germain,and
G. Borghs, “AlGaN/GaN/AlGaN double heterostructures on silicon substratesfor high breakdown voltage field-effect transistors with low on-resistance,” Jpn. J.Appl. Phys., vol. 48, Apr. 2009.
[29] Shreepad Karmalkar and Umesh K. Mishra, “Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using a Field Plate, ” IEEE transactions on Electron Devices, vol. 48, no. 8, pp. 1515-1521 , Aug 2001.
[30] Y. Dora, A. Chakraborty, L. McCarthy, S. Keller, S. P. DenBaars, U. K. Mishra, ” High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates, ” IEEE Electron Device Letters, vol. 27, no. 9, pp. 713-715, Sep 2006.
[31] C. S. Suh, Y. Dora, N. Fichtenbaum, L. McCarthy, S. Keller, and U. K. Mishra, ” High-Breakdown Enhancement-Mode AlGaN/GaN HEMTs with Integrated Slant Field-Plate, ” Electron Devices Meeting, 2006. IEDM '06. International.
[32] Ting-En Hsieh, Lu-Che Huang, Yueh-Chin Lin, Chia-Hua Chang, Huan-Chung Wang and Edward Yi Chang,” Fabrication of AlGaN/GaN HEMTs with Slant Field Plates by Using Deep-UV Lithography, “ Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on.
[33] Zijian Li, Rongming Chu, Daniel Zehnder, Sameh Khalil, Mary Chen, Xu Chen, and Karim Boutros,” Improvement of the Dynamic On-Resistance Characteristics of GaN-on-Si Power Transistors with A Sloped Field-Plate, ” Device Research Conference (DRC), 2014 72nd Annual.
[34] Maojun Wang , Kevin J. Chen, “Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs, ” IEEE transactions on Electron
Devices, vol. 58, no. 2, pp. 460-465, Feb 2011.
[35] The introduction of sentaurus TCAD –S-Device, Published by Synopsys Sentaurus Device.
[36] 林佳億,2014,雙通道氮化鋁鎵/氮化鎵高電子遷移率電晶體之線性度提升
,國立雲林科技大學,碩士論文。
[37] Ya-Ju Lee1, Yung-Chi Yao, Chun-Ying Huang, Tai-Yuan Lin, Li-Lien Cheng, Ching-Yun Liu, Mei-Tan Wang and Jung-Min Hwang, “ High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers, ” Lee et al. Nanoscale Research Letters 2014, 9:433.