臺灣博碩士論文加值系統

近年來，隨著無線通訊系統的蓬勃發展，低成本、高效能與高整合性的需求越來越被重視，而微波與毫米波無線通訊系統適用於高速數據傳輸與行動通訊上，並符合上述的需求，也是未來無線通訊的應用趨勢。
本篇論文在矽基板上採用0.5 m氮化鎵製程來實現高功率與低相位雜訊切換電感陣列交叉耦合壓控振盪器，利用切換電感陣列實現多頻段以增加可調頻寬，並使用可變電容微調頻率，並採用Capacitance-splitting技術來增加電晶體的負電導值，在頻率為3.5 GHz時負電導值增加126％，以滿足切換電感壓控振盪器的起振條件。一階切換電感壓控振盪器有兩個頻帶，分別為3.41-3.57 GHz和3.85-3.94 GHz，二階切換電感壓控振盪器有四個頻帶，可調範圍從3.16至3.9 GHz，在10 V供應電壓下，輸出頻率為3.5 GHz，輸出功率(Pout)為21 dBm，在距離3.3 GHz載波頻率1MHz偏移下提供最佳的相位雜訊為-123.04 dBc / Hz。

In recent years, wireless communication systems have been required for low cost, high efficiency, and high integration. The microwave and millimeter-wave wireless communication systems are suitable for high data rate application and mobile communication. Therefore, it is the trend of future applications of wireless system.
This thesis presents high output power and low phase noise cross-coupled voltage-controlled oscillators (VCOs) containing array of switchable inductors. The VCOs are implemented using 0.5 m Gallium-Nitride (GaN) high electron mobility transistor on Si substrate technology. We use the array of switchable inductors to achieve band selection, whereas fine tuning is controlled using varactors. Additionally, we use capacitance-splitting to satisfy start-up condition. The Gm value is increased by approximately 126% at 3.5 GHz. The one-stage (N=1) VCO operates in the ranges 3.41–3.57 GHz and 3.85–3.94 GHz. The two-stage (N=2) VCO operates in the range 3.16–3.9 GHz. The measured frequency band of the two-stage VCO is located 3.3 GHz, and the measured phase noise at 1 MHz offset is −123 dBc/Hz. This VCO oscillates at a frequency of 3.5 GHz and provides 21 dBm of power at a biasing of Vd=10 V.

指導教授推薦書
論文口試委員會審定書
誌 謝 iii
中文摘要 iv
英文摘要 v
目錄 vi
圖目錄 ix
表目錄 xi
第一章 緒論 1
1.1 研究背景 1
1.2 研究動機與目的 6
1.3 論文架構 8
第二章 文獻回顧 10
2.1 Ka-band壓控振盪器 10
2.2 W-band壓控振盪器 12
2.3 X-band壓控振盪器 13
2.4 Capacitance-Splitting壓控振盪器 14
2.5 氮化鎵差動振盪器 16
2.6 切換電容陣列壓控振盪器 18
2.7 垂直式切換電感壓控振盪器 19
2.8 自感式切換電感壓控振盪器 20
2.9 切換耦合電感壓控振盪器 22
第三章 高輸出功率與低相位雜訊氮化鎵切換電感陣列壓控振盪器之設計 24
3.1 簡介 24
3.2 電路架構與原理 25
3.2.1 切換電感電路架構 27
3.2.2 電容分裂技術(Capacitance-splitting) 29
3.2.3 切換電感陣列壓控振盪器小信號模型 32
3.3 切換電感陣列壓控振盪器 34
3.3.1 一階切換電感壓控振盪器 35
3.3.2 二階切換電感壓控振盪器 38
第四章 高輸出功率與低相位雜訊氮化鎵切換電感陣列壓控振盪器之量測結果 41
4.1 電路模擬與量測結果 41
4.2 結果與討論 48
第五章 結論 49
參考文獻 50

圖目錄
圖 1.1 無線通訊系統相關應用 ................................................................. 3
圖 1.2 無線區域網路與蜂巢式網路的發展歷程..................................... 3
圖 1.3 應用於 5G 無線通訊系統使用的場景 .......................................... 4
圖 1.4 應用於 5G 無線通訊系統頻段相對應的使用的時機.................. 5
圖 1.5 微波與毫米波無線通訊使用的頻段與應用................................. 6
圖 1.6 射頻前端電路模組示意圖 ............................................................ 7
圖 2.1 Ka-band 單埠輸出壓控振盪器示意圖 ........................................ 11
圖 2.2 W-Band 單埠輸出壓控振盪器示意圖......................................... 12
圖 2.3 X-band 單埠輸出壓控振盪器架構圖.......................................... 14
圖 2.4 Capacitance-Splitting 電路架構.................................................... 15
圖 2.5 Capacitance-Splitting 技術............................................................ 16
圖 2.6 氮化鎵差動振盪器架構 ............................................................... 17
圖 2.7 切換電容陣列壓控振盪器架構................................................... 18
圖 2.8 兩種型式的垂直式切換電感架構............................................... 20
圖 2.9 自感式切換電感壓控振盪器架構圖........................................... 21
圖 2.10 兩種型式的自感式切換電感架構............................................. 21
圖 2.11 切換耦合電感壓控振盪器架構圖 ............................................. 23
圖 3.1 加入切換電感陣列(a) N=1 與(b) N=2 的交錯耦合壓控振盪器27
圖 3.2 切換電感電路架構 ....................................................................... 28
圖 3.3 切換電感開啟與關閉時的 S 參數............................................... 29
圖 3.4 Capacitance-splitting 架構 ............................................................ 30
圖 3.5 核心壓控振盪器、一階切換電感壓控振盪器與二階切換電感壓
控振盪器加入微帶線(ML2)的負電導(Gm)與頻率模擬結果 ................ 31
圖 3.6 電晶體轉導(gm)、等效電阻值(Rp)與振盪頻率(fo)在起振條件下的
關係........................................................................................................... 32
圖 3.7 (a)開啟與(b)關閉狀態下的切換電感等效半電路...................... 34
圖 3.8 (a)一階與(b)二階切換電感陣列交錯耦合壓控振盪器。.......... 37
圖 3.9 耦合參數(k)與電感感值 Lsw2對 d 參數的關係圖 ...................... 39
圖 3.10 二階切換電感壓控振盪器等效感值模擬結果......................... 40
圖 4.1 (a)一階切換電感與(a)二階切換電感壓控振盪器晶片圖.......... 43
圖4.2 (a)一階切換電感壓控振盪器在開啟與關閉狀態下可調頻率與輸
出功率的量測結果(b)二階切換電感壓控振盪器在四個不同的狀態
下，可調頻率與輸出功率量測結果 ...................................................... 44
圖 4.3 (a)在狀態 1 與狀態 2 下，一階切換電感壓控振盪器的相位雜訊
量測結果(b)在狀態 1 到狀態 4 下，二階切換電感壓控振盪器的相位雜
訊量測結果 .............................................................................................. 46

表目錄
表 1.1 5G NR 支援電信商......................................................................... 5
表 1.2 微波與毫米波無線電波頻帶 ......................................................... 6
表 1.3 半導體材料特性比較表 ................................................................. 8
表 2.1 Ka-band 壓控振盪器實作結果 .................................................... 11
表 2.2 W-band 壓控振盪器實作結果...................................................... 13
表 2.3 X-band 單埠輸出壓控振盪器實作結果...................................... 14
表 2.4 Capacitance-Splitting 壓控振盪器實作結果 ............................... 16
表 2.5 氮化鎵差動振盪器實作結果....................................................... 17
表 2.6 切換電容陣列壓控振盪器實作結果........................................... 19
表 2.7 垂直式切換電感壓控振盪器實作結果....................................... 20
表 2.8 自感式切換電感壓控振盪器實作結果....................................... 22
表 2.9 切換耦合電感壓控振盪器實作結果........................................... 23
表 3.1 傳統交錯耦合壓控振盪器元件參數列表................................... 27
表 3.2 切換電感電路元件參數列表 ....................................................... 28
表 3.3 一階切換電感壓控振盪器電路元件設計參數........................... 37
表 3.4 二階切換電感壓控振盪器電路元件設計參數........................... 39
表 3.5 一階與二階切換電感壓控振盪器電路設計參數....................... 40
表 4.1 一階與二階切換電感壓控振盪器電路量測結果....................... 46
表 4.2 切換電感陣列壓控振盪器與其他文獻特性比較表................... 47

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