臺灣博碩士論文加值系統

由於全球能源與環境問題，利用太陽能中可見光催化光觸媒分解水產生氫氣是一種環保而潔淨的方法。其中硫化鎘是一種可見光吸收之光觸媒，擁有能隙小和低成本之優點，卻容易受到光腐蝕而且不環保的缺點。我們先前的研究成果發現，In0.2Cd0.8S光觸媒相較CdS有更好的光催化活性，為了繼續降低其鎘含量和增強其光催化效果，我們進一步利用壓電噴射系統結合掃描式電化學顯微鏡篩選Mx（In0.2Cd0.8）1-xS光觸媒陣列。結果顯示摻雜30%鎵之光觸媒Ga0.3（In0.2Cd0.8）0.7S具有最佳的光催化活性，摻雜後之光觸媒較未摻雜前提升了4倍光電流，其載子濃度提高了2.3倍，因此其光催化活性增加，而光電轉換效率在400 nm波長下可達到73%。
石墨烯和氧化石墨烯電阻低、透光率高、摻雜進半導體材料中能降低其能隙，因此我們也將其摻雜進In0.2Cd0.8S光觸媒中進行討論，研究結果顯示摻雜0.05 wt%石墨烯之In0.2Cd0.8S，與摻雜0.1 wt%氧化石墨烯之In0.2Cd0.8S皆可提升其光觸媒活性，相較純In0.2Cd0.8S，其光電流分別提高2倍和2.5倍，載子濃度分別為提高1.5倍和2.3倍，提高電子電洞對產生機率，進而提升其光催化活性。

Due to global energy and environmental issues, the use of visible light catalyzed photocatalysts in solar energy to decompose water and produce hydrogen gas is an environmentally friendly and clean method. Cadmium sulfide (CdS) is a visible light absorption photocatalyst. The advantages of CdS are small energy gap and low cost, but CdS suffers light corrosion and it is not environmentally friendly. Our previous research found that In0.2Cd0.8S photocatalyst has better photocatalytic activity than CdS. In order to reduce cadmium content and enhance its photocatalytic activity, the piezoelectric injection system combined with scanning electrochemical microscope is used for screening of new composition of the photocatalysts. The Mx(In0.2Cd0.8)1-xS photocatalyst array was prepared and screened. The results show that Ga0.3(In0.2Cd0.8)0.7S has the best photocatalytic activity. The photocurrent of the Ga0.3(In0.2Cd0.8)0.7S photocatalyst has 4 times higher than that of the In0.2Cd0.8S photocatalyst. The carrier concentration of the Ga0.3(In0.2Cd0.8)0.7S photocatalyst has 2.3 times higher than that of the In0.2Cd0.8S photocatalyst, resulting in higher photocatalytic activity. The photoelectric conversion efficiency of the Ga0.3(In0.2Cd0.8)0.7S photocatalyst can reach 73% at 400 nm.
Graphene and graphene oxide have low resistance and high transmittance. When they are added into semiconductors, the energy gap of semiconductors can be reduced. Graphene and graphene oxide doped In0.2Cd0.8S photocatalysts are also discussed in this study. Results show that The photocurrent of the 0.05 wt% graphene-In0.2Cd0.8S and 0.1 wt% graphene oxide-In0.2Cd0.8S is increased 2 times. and 2.5 times than that of the pure In0.2Cd0.8S photocatalysts. The carrier concentration of the 0.05 wt% graphene-In0.2Cd0.8S and 0.1 wt% graphene oxide-In0.2Cd0.8S is increased 1.5 times and 2.3 times than that of the pure In0.2Cd0.8S photocatalysts. The addition of the graphene and graphene oxide could increase the generation probability of electron hole pair resulting in enhancing the photocatalytic activity of photocatalysts.
Key word: Photocatalyst, SECM, CdS, GaS, Graphene.

目錄
致謝 i
中文摘要 ii
Abstract iii
目錄 v
圖目錄 vii
表目錄 xiii
第一章 緒論 1
1-1 前言 1
1-2 光觸媒起源 3
1-3 研究動機 5
第二章 原理與文獻回顧 6
2-1 光觸媒基本原理 6
2-2 半導體光觸媒 9
2-2-1 半導體材料 9
2-2-2 半導體光觸媒分類 15
2-2-3 影響光催化效果之因素 18
2-3 硫系列光觸媒與文獻回顧 27
2-3-1 硫化鎘半導體 27
2-3-2 硫化銦半導體 27
2-3-3 硫化鎵半導體 28
2-3-4 硫化鎘、硫化鎵文獻回顧 28
2-4 石墨烯與氧化石墨烯 31
2-4-1石墨烯 31
2-4-1氧化石墨烯 32
2-4-1 石墨烯與氧化石墨烯文獻回顧 33
2-5 掃描式電化學顯微鏡 34
2-5-1 起源 34
2-5-2 回饋模式 (Feedback mode) 35
2-5-3 基材產生-微電極收集模式 (SG-TC mode) 37
2-5-4 光纖照光-基材收集模式(Optical fiber illumination-Subtract collection mode) 37
2-5-5 集成組合化學法與SECM快篩光觸媒文獻回顧 39
第三章 實驗設備與方法 43
3-1實驗材料 43
3-2實驗藥品 44
3-4檢測儀器 47
3-5實驗步驟 48
3-5-1 基材清洗 48
3-5-2 光觸媒陣列快篩實驗 48
3-5-3 光電極製備 52
3-5-4 光電極光電化學實驗 53
第四章 結果與討論 55
4-1 Mx(In0.2Cd0.8)1-xS半導體光觸媒陣列之篩選 55
4-1-1 光觸媒陣列之篩選 55
4-1-2 Gax(In0.2Cd0.8)1-xS 光觸媒陣列之再現性 60
4-1-3 Ga0.3(In0.2Cd0.8)0.7S 光觸媒陣列之特性分析 64
4-2 Ga0.3(In0.2Cd0.8)0.7S 光電極之特性分析 68
4-2-1 光電極表面型態 68
4-2-2 光觸媒晶型結構 70
4-2-3 光觸媒鍵結型態 73
4-2-4 光觸媒吸收波長 76
4-2-5 光觸媒之線性伏安掃描 78
4-2-6 光觸媒之光電流分析 80
4-2-7 光觸媒之光電轉換效率 82
4-2-8 光觸媒之交流阻抗 85
4-2-9 光觸媒水解產氣結果 88
4-2-10 綜合討論 89
4-3 石墨烯摻雜In0.2Cd0.8S半導體光電極之效應 90
4-3-1 光觸媒之光電流分析 90
4-3-2 光觸媒吸收波長 94
4-3-3 光觸媒表面型態 96
4-3-4 光觸媒晶型結構 98
4-3-5 光觸媒之光電轉換效率 99
4-3-6 光觸媒之交流阻抗 102
4-3-7 光觸媒水解產氣結果 104
4-3-8 綜合討論 105
4-4 穩定性測試 106
第五章 結論 108
參考文獻 111

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