臺灣博碩士論文加值系統

本論文係以反應式濺鍍沉積法利用不同比例之甲烷/氬氣 混和氣體製備非晶質硼碳(a-BC)薄膜，實驗過程中，在總流量 40 sccm 下CH4/(CH4+Ar)流量比例分別為 1 %、25 %、50 %、75 %以及 100 %。射頻功率、工作壓力以及基材溫度為 300 W、 6 Pa 以及 298 K，而碳薄膜厚度固定為 100 nm。本實驗並透過電漿診斷、微觀結構及化學組成分析、光學特性分析以及電學 特性分析等對其進行探討。
透過電漿診斷，可發現 CH4/(CH4+Ar)比例增加則電漿中 活性物種 CH、Hα、Hβ以及 H2 含量增加，推測為致使碳薄膜沉積速率越快的原因。透過微結構及化學組成分析，紅外線光 譜量測可呈現 CH4/(CH4+Ar)比例增加時，sp3 C-Hx 之吸收峰 增加，X 光光電子能譜量測可呈現 CH4/(CH4+Ar)比例增加時， 硼碳薄膜之硼/碳比例減少且 sp2 C=C 鍵結比例也減少，拉曼 散射光譜量測則可呈現CH4/(CH4+Ar)比例增加時硼碳薄膜之ID/IG減少；透過光學特性分析 ，紫外光光譜儀呈現CH4/(CH4+Ar)比例增加時光學能隙值增加；而透過電學特性分析，則可呈現 CH4/(CH4+Ar)比例增加時電阻率增加。
綜上所述，以反應式濺鍍沉積法利用不同比例之甲烷/氬 氣混和氣體製備非晶質硼碳(a-BC)薄膜時，當 CH4/(Ar+CH4) 比例為 1 %時，具有為較高石墨化程度之硼碳薄膜。

In this thesis amorphous boron carbon (a-BC) thin films were prepared by reactive sputter deposition using different ratios of methane/argon mixed gas. During the experiment, the total flow rate was 40 sccm. And CH4/(CH4+Ar) flow rates are 1 %, 25 %, 50 %, 75 % and 100 % respectively. The RF power, working pressure, and substrate temperature were 300 W, 6 Pa, and 298 K, while the carbon film thickness was fixed at 100 nm. The experiment was conducted through plasma diagnostics, microstructure analysis, chemical composition analysis, optical characteristics analysis, and electrical characteristics analysis.
By the plasma diagnosis, the results indicate that as the ratio of CH4/(CH4+Ar) increases, the contents of active species: CH、Hα、Hβand H2 in the plasma also increase. Hence the higher CH4/(CH4+Ar) ratio the faster deposition rate of the carbon thin film is presumed. By microstructure and chemical composition analysis, the higher proportion of CH4/(CH4+Ar), the stronger absorption peak of sp3 C-Hx in fourier transform infrared Spectrometer. X-ray photoelectron spectroscopy measurement result also shows that as the proportion of methane/argon increases, both the boron/carbon ratio of the boron-carbon film and the sp2 C=C bond ratio reduces. Raman scattering spectrum
measurement shows that the ratio of the ID/IG of the boron carbon film decreases when the ratio of CH4/(CH4+Ar) increases. By ultraviolet(UV) spectrometer and electrical characteristics analysis, the results indicate that the optical energy gap value and electrical resistivity both increased when the ratio of CH4/(CH4+Ar) increased.
In summary, when preparing an a-BC film by reactive sputter deposition method with different ratios of methane/ argon mixed gas, as the CH4/(CH4+Ar) ratio was 1 %, the a-BC film is more highly graphitized.

誌謝 i
摘要 ii
Abstract iii
總目次 v
圖目次 viii
表目次 xii
第1章 緒論 1
1-1 理論背景 1
1-1-1 碳元素之介紹 1
1-1-2 碳元素之各種同素異形體特性與應用 2
1-1-3 硼元素之介紹 12
1-1-4 硼元素之各種同素異形體特性與應用 13
1-1-5非晶質硼碳薄膜文獻回顧 14
1-2 非晶質碳薄膜摻雜不同元素改質之特性 15
1-2-1 n型之非晶質碳薄膜性質 16
1-2-2 p型之非晶質碳薄膜性質 16
1-3 非晶質碳薄膜沉積法介紹 17
1-3-1 反應式濺鍍沉積法之簡介 18
1-3-2反應式濺鍍沉積法之沉積機制 19
1-4本研究之動機與目的 23
第2章 實驗步驟及儀器原理 26
2-1 實驗流程圖 26
2-2 樣品製備 28
2-3 實驗參數設定 30
2-4反應式濺鍍沉積系統 34
2-5 電漿診斷 38
2-6 非晶質碳薄膜厚度量測 42
2-7 非晶質碳薄膜微觀結構量測 44
2-7-1 傅立葉轉換紅外光光譜儀(Fourier Transform Infrared Spectrometer, FTIR) 44
2-7-2 X光光電子能譜儀 (X-ray Photoelectron Spectrometer, XPS) 46
2-7-3 拉曼散射光譜儀 (Raman Scattering Spectrometer, RSS) 49
2-8 非晶質碳薄膜光學性質量測 56
2-9 非晶質碳薄膜電性量測 59
第3章 結果與討論 62
3-1電漿診斷分析 62
3-2碳薄膜沉積速率 67
3-3碳薄膜表面形態和膜厚量測 70
3-4微觀結構和化學組成 73
3-4-1 傅立葉轉換紅外光光譜儀分析 73
3-4-2 X光光電子能譜儀分析 75
3-4-3 拉曼散射光譜儀分析 81
3-5光學性質分析 86
3-6電學性質分析 89
3-7 本實驗與先前研究之結果比較 91
第4章 結論 95
參考文獻 97

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