臺灣博碩士論文加值系統

近年來全球經濟穩定成長，半導體產業及電子產品技術大幅躍進，使得人們生活更為便利，獲取資訊的方式也更多元化。積體電路 ( Integrated Circuit; IC ) 朝向高效能、高密度、低功耗及小尺寸之方向發展，因而使得前瞻封裝技術扮演舉足輕重的角色。傳統的打線(Wire Bonding)封裝及覆晶封裝(Flip Chip)已無法滿足需求，因而發展扇出型晶圓級封裝(Fan-out Wafer Level Package; FOWLP)並逐步應於於高階產品。
扇出型封裝主要將晶圓切割並且增加晶片間距，重新組合成另一片晶圓，然後再進行模壓並且以線路重佈(Re-Distribution Layer; RDL)製程取代原本以基板型式封裝，依結構設計又可區分為單晶片、多晶片及系統級等型式。也因為加工的面積比較基板更為增加，且在材料熱膨脹係數不同及結構配置影響下，晶圓會產生一定程度的翹曲現象。此翹曲現象通常可藉由改變模壓環氧樹脂或調整結構進行改善，但仍有某些程度的翹曲度仍無法被完全克服。本研究即在探討對已翹曲晶圓施予不同之溫度、下壓力、真空力及加熱溫度-時間曲線，對降低翹曲度之影響。從實驗結果中分析各因子顯著性，並尋求可降低翹曲度之最佳化參數，進而提升後製程良率。

In recent years, the global economy has grown steadily. The semiconductor industry and electronic product technologies have leapt forward, making people's lives more convenient and the means of obtaining information more diversified. Advanced packaging technology play a decisive role in the development of high performance, high density, low power consumption and small size of integrated circuits (ICs). Traditional wire bonding and flip chips packages have failed to meet the demand. Therefore, fan-out wafer level packages (FOWLPs) have been developed and gradually applied to high-end products.
The fan-out package mainly cuts wafers and increases the space between chips, recombines them into another wafer, and then performs molding. A Re-Distribution Layer (RDL) process is being applied to replaces the original substrate type package. According to the structural design, it can be divided into single-chip, multi-chip, and system level types. Because of the processed area is larger than the substrate, the wafer will have a certain degree of warpage under the influence of different thermal expansion coefficients and structural configurations. It can usually be improved by changing the molded epoxy or adjusting the structure, but there is still some degree of warpage that cannot be completely overcome. In this study, the effects of different temperatures, downforces, vacuum forces, and heating temperature-time curves on warped wafers were investigates. From the experimental results, the significance of each factor was analyzed, and the optimization parameters that can reduce warpage were sought out, thereby improving the process yield.

摘要 i
Abstract ii
目錄 iii
圖目錄 v
表目錄 viii
第一章 緒論 1
1.1 前言 1
1.2 研究背景與動機 2
1.3 文獻回顧 3
1.4 研究目的 5
1.5 本文架構 6
第二章 扇出型晶圓級封裝製程介紹 7
2.1 扇出型封裝製程介紹 7
2.2 晶圓模壓原理 23
2.3 晶圓自動模壓設備 24
2.4 環氧模壓樹脂材料介紹 28
2.5 翹曲產生原因 29
2.6 翹曲對下製程影響 30
2.7 現有解決方案 32
第三章 實驗方法與步驟 35
3.1 翹曲改善分析 35
3.2 實驗設備 36
3.3翹曲度量測儀器 39
3.4 實驗設計 42
3.5 實驗產品資訊 43
第四章 實驗結果與討論 45
4.1 實驗因子定義 45
4.2 定壓力/真空實驗 45
4.3 定溫度/真空實驗 46
4.4 定溫度/壓力實驗 47
4.5 最佳化參數 48
4.6 升溫曲線研究 49
4.7持溫曲線研究 50
4.8降溫曲線研究 51
4.9 小批量驗證結果 53
第五章 結論及未來研究方向 56
5.1 結論及成果 56
5.2 未來展望 57
圖目錄
圖1-1全球經濟成長與IC產業連動性[1] 1
圖2-1扇出型/扇入型封裝結構[17] 7
圖2-2扇出型封裝種類[17] 7
圖2-3 Process Flow Chart 9
圖2-4晶圓貼片機及研磨機[19] 10
圖2-5 晶圓切割機[19] 10
圖2-6貼膜機及上片機[21] 11
圖2-7晶圓自動模壓機[22] 11
圖2-8載具移除機[23] 12
圖2-9 WLCSP RDL製程[25] 13
圖2-10光阻塗佈機[26] 14
圖2-11真空濺鍍機[27] 14
圖2-12步進式曝光機[28] 15
圖2-13電化學沉積設備[29] 15
圖2-14光阻去除機[30] 16
圖2-15晶圓旋轉蝕刻機[30] 17
圖2-16 SMT Line配置圖[32] 18
圖2-17晶圓自動模壓機[34] 18
圖2-18研磨正/背面流程 19
圖2-19膠體研磨機[19] 19
圖2-20鐳射鑽孔機[35] 20
圖2-21晶圓鐳射印字機[36] 20
圖2-22晶圓植球機 21
圖2-23晶圓切割機[19] 21
圖2-24 IC取置料機[37] 22
圖2-25自動光學檢查機[38] 22
圖2-26 模壓作動示意圖[39] 23
圖2-27 晶圓模壓前後[39] 23
圖2-28 自動晶圓模壓機外觀 24
圖2-29模組功能示意圖 24
圖2-30 Load Port模組 25
圖2-31 Alignment模組 25
圖2-32環氧樹脂供給模組 26
圖2-33壓合系統 26
圖2-34長烤模組 27
圖2-35冷卻模組 27
圖2-36翹曲與位移之關係[41] 29
圖2-37晶圓平台模組[42] 31
圖2-38滾球模組[42] 31
圖2-39晶圓荷重治具 32
圖2-40晶圓及治具結合圖 33
圖3-1特性要因分析圖 35
圖3-2腔體構造說明 37
圖3-3實驗機外觀 38
圖3-4腔體機構 39
圖3-5非接觸式三次元設備[47] 40
圖3-6翹曲晶圓量測 40
圖3-7三次元軟體介面 41
圖3-8實驗設計流程 42
圖3-9產品結構圖 43
圖4-1初始溫度-時間曲線 45
圖4-2參數差異比較 49
圖4-3升溫曲線實驗 50
圖4-4持溫曲線實驗 51
圖4-5降溫曲線實驗 52
圖4-6改善後溫度-時間曲線 53
圖4-7小批量驗證結果 54
圖4-8改善前後翹曲度 54
圖4-9改善後良率追蹤結果 55
表目錄
表2-1環氧模壓樹脂成分[40] 28
表2-2球徑與球數對照表 30
表3-1機台設計需求 36
表3-2腔體作動時序 37
表3-3 產品厚度組成 43
表4-1定壓力/真空實驗結果 46
表4-2定溫度/真空實驗結果 47
表4-3定溫度/壓力實驗結果 48
表4-4升溫實驗結果 49
表4-5持溫實驗結果 50
表4-6降溫實驗結果 52
表4-7小批量驗證資料 53

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