本研究使用精微式探針點膠機直接轉移奈米銀漿料PM03於矽基板上，於矽基板上物理氣相沉積鈦導線進行表面改質並改善奈米銀漿料PM03及矽基板之附著度。
本論文探討點膠機之參數對不同奈米銀漿料PM03固含量(70wt%、65wt%)尺寸影響。奈米銀漿料PM03附著度改善製程，並使用蒸鍍鈦之方式進行表面改質，並且，輔助熱壓之鐵氟龍板無實驗室過去研究使用鐵氟龍膠帶於表面產生非預期之矽進而影響電遷移結果。
本研究使用之奈米銀漿料PM03於熱壓後內部會有孔洞產生(孔隙率約7%)，並配合高荷電之中斷實驗，探討多孔結構於通電實驗前後之表面形貌、孔隙率及3D影像結構之變化。
奈米銀漿料PM03於熱壓參數(250 oC、5 MPa)、通電參數(250 oC、5x105 A/cm2)通電48hr導線表面無明顯的微結構變化。
奈米銀漿料PM03於熱壓參數(250 oC、5 MPa)、通電參數(250 oC、5x105 A/cm2) 通電140hr 導線各處均產生孔洞、且於0.75 cm處(即靠近陰極/中間) 產生凸塊；通電後，奈米銀漿料PM03整條導線均發生電遷移變化。
奈米銀漿料PM03於熱壓參數(250 oC、5 MPa)、通電參數(250 oC、5x105 A/cm2)之0hr、48hr、96hr、216hr之中斷實驗搭配共軛焦顯微鏡之3D結果發現，於216hr導線各處均有孔洞產生；於96hr及216hr均有凸塊產生，符合奈米銀漿料140hr之中斷實驗結果，位置具有再現性。
奈米銀漿料PM03於熱壓參數(250 oC、5 MPa)、通電參數(250 oC、5x105 A/cm2)之通電48hr中斷實驗中，導線各處之孔隙率相近，且由陰極往陽極遞減，符合電子流方向，孔隙率數據具有再現性。

The relationship between porosity and electromigration can be discussed by fabricating nano-scale structures. Electromigration usually occurs during the accumulation of atoms accompanied by protrusions or hillocks at the anode and during the depletion of atoms accompanied by voids or an open circuit at the cathode. However, we show that electromigration occurs over the entire stripe surface, not just at the anode or cathode.

Paste PM03 was the nano-silver paste used in this research. After using Needle Type Dispenser to direct write paste PM03 on the silicon substrate, a hot press technique was used to help the silver nanoparticles sinter to form a dense structure with a hot press temperature and pressure of 250oC and 5 MPa, respectively. Internal pre-existing pores existed (porosity about 7%). The internal pore structure was expected to alter during current-stressing. The parameters of the current-stressing test were a temperature of 250℃ and a current density of 5x105 A/cm2. We discuss the microstructure change in the silver nano-stripe and electromigration for different time points.

In the interruption test, the silver nano stripe did not occur obvious electromigration phenomenon at 48 hrs., which means that it did not form hillocks at the anode or voids at the cathode on the surface. However, voids formed all over the silver nano-stripe, and hillocks developed near the middle and cathode at 140 hrs. and 216 hrs. The porosity decreased from the cathode (23.5±4.5%) to the anode (4.6±1.2%), which follows the direction of the electron force.

摘要 I
Extended Abstract II
誌謝 VI
目錄 VIII
表目錄 XI
圖目錄 XII
第一章 緒論 1
1-1 前言 1
1-2 研究動機 2
第二章 文獻回顧 3
2-1 奈米效應與其應用 4
2-1-1 奈米效應 4
2-1-2 奈米銀漿料特性 5
2-1-3 奈米銀漿料應用於高功率模組 6
2-2 奈米粒子轉移技術及應用 6
2-2-1 點膠機應用於奈米粒子轉移技術 6
2-2-2 點膠機應用於底部填充膠之3D封裝 7
2-2-3 漿料轉移技術應用於藥物輸送系統 7
2-3 奈米粒子燒結/熱壓 13
2-3-1 奈米粒子燒結之燒結行為 13
2-3-2 銀漿料之燒結及熱壓 14
2-4 奈米銀漿料PM03漿料性質 19
2-5 奈米銀漿料附著度改善 23
2-6 電遷移效應 24
2-6-1 電遷移理論 24
2-6-2 銅導線高荷電測試 25
2-6-3 燒結奈米銀導線高荷電測試 26
2-6-4 多孔隙結構之電遷移效應 26
第三章 實驗方法與步驟 32
3-1 實驗使用材料 32
3-2 實驗製程及分析儀器 32
3-2-1 點膠機(Needle Type Dispenser) 32
3-2-2 掃描式電子顯微鏡(SEM) 34
3-2-3 表面輪廓儀 (α-step) 34
3-2-4 Gatan熱壓機 34
3-2-5 高溫-高荷電通電載具 37
3-2-6 紅外線管型爐 40
3-2-7 熱重損失分析儀(TGA) 40
3-3 實驗流程 41
3-3-1 試片製備 42
3-3-2 奈米銀漿料熱壓 43
3-3-3 熱壓樣品微結構分析及尺寸量測 44
3-3-4 高溫-高荷電測試 44
第四章 結果與討論 46
4-1 點膠參數對於不同黏滯係數之漿料尺寸分析 46
4-1-1 奈米銀漿料PM03 70wt%點膠參數與導線尺寸之分析 …………………………………………………………….46
4-1-2 奈米銀漿料PM03 65wt%點膠參數與導線尺寸之分析 …………………………………………………………….52
4-1-3 奈米銀漿料PM03 70wt%及65wt%點膠參數與尺寸比較 ……………………………………………………………57
4-2 奈米銀漿料PM03之附著度改善製程 60
4-3 奈米銀漿料PM03於250 oC、5 MPa下之高溫-高荷電測試 …………………………………………………………………69
4-3-1 奈米銀漿料PM03通電48 hr之中斷實驗 69
4-3-2 奈米銀漿料PM03通電140 hr之中斷實驗 71
4-3-3 奈米銀漿料PM03通電前後之剖面孔隙率變化 .74
4-3-3 奈米銀漿料PM03通電前後之3D結構 .79
4-3-3 奈米銀漿料PM03通電48 hr之再現性實驗 .82
第五章 結論 84
參考文獻 86
 

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