摘 要 I
Abstract III
Acknowledgement (誌謝) V
Table of contents VI
Figure captions IX
Table captions XIII
Chapter 1 Introduction 1
1.1 Background 1
1.2 Resistive random-access memory (ReRAM) 1
1.3 Switching mechanisms of ReRAM 2
1.4 Introduction to CBRAM 4
1.5 Amorphous indium– gallium–zinc oxide (a-IGZO) 6
1.6 Memory-in-pixel (MIP) 7
1.7 Motivations 7
1.8 Organization of the thesis 8
Chapter 2 Electrical conduction phenomena 16
2.1 Electrical characteristics of CBRAM 16
2.1.1 Forming/set/reset process 16
2.1.2 Operation mode 16
2.1.3 ON-OFF ratio 17
2.1.4 Retention 17
2.1.5 Endurance 17
2.1.6 Operation speed 18
Chapter 3 Experimental process and details 19
3.1 Si substrates cleaning 19
3.2 Preparation of a-IGZO CBRAM 19
3.3 Electrical measurements and material analyses 20
3.3.1 DC sweep measurement 21
3.3.2 Endurance test 21
3.3.3 Retention test 22
3.3.4 Temperature-dependent LRS test 22
3.3.5 Transmission electron microscopy (TEM) 22
3.3.6 Energy dispersive x-ray spectrometry (EDS) 23
3.3.7 X-ray photoelectron spectroscopy (XPS) 24
Chapter 4 Results and discussion 29
4.1 The resistive switching mechanism of a-IGZO CBRAM 29
4.1.1 Electrical properties of Cu/TiW/IGZO/Al2O3/Pt device 29
4.1.2 TEM and EDS line-scan analysis 29
4.1.3 Temperature-dependent LRS test 30
4.2 Electrical characteristics of Cu/TiW/IGZO/Al2O3/Pt bi-layer structure 31
4.2.1 Comparison of electrical properties of Cu/TiW/IGZO/Al2O3/Pt bi-layer structure and Cu/TiW/IGZO/Pt single layer structure 31
4.2.2 Electrical properties of IGZO CBRAM with different Al2O3 thicknesses 32
4.2.3 Electrical properties of IGZO CBRAM with different TiW thicknesses 33
4.2.4 Influence of cell size on electrical properties of IGZO CBRAMs 34
4.2.5 Influence of compliance current on endurance 34
4.2.6 Electrical properties of IGZO CBRAM prepared at different oxygen partial pressures 35
4.2.7 Post-annealing treatment on a-IGZO CBRAM 37
Chapter 5 Conclusions and future work 59
5.1 Conclusions 59
5.2 Future work 60
References 61
Vita 67

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